极紫外光刻

工件台系统是极紫外光刻（EUV）的一个关键子系统。

Wafer stage is a key subsystem in the extreme ultra violet lithography ( EUV ) .

在下一代光刻技术中，由于极紫外光刻（EUVL）分辨率高、且具有一定的产量优势及传统光学光刻技术的延伸性，因而是IC业界制备纳米级ULSI器件的首选光刻方案之一。

In the next generation lithography ( NGL ) technology , extremely ultraviolet lithography ( EUVL ) has high-resolution , certain output and technical extension property of traditional lithography , so it becomes one of the first-selected lithography schemes for preparing the nanometer ULSI de-vices in IC circles .

极紫外光刻真空工件台技术研究

Research on Vacuum Stage Technologies for Extreme Ultraviolet Lithography

毛细管放电极紫外光源具有较高的输出功率及能量转换效率，是极紫外光刻的首选曝光光源之一。

It is the capillary discharge EUV source that exhibits higher output power and conversion efficiency of energy .

极紫外光刻技术被认为是下一代最有前途的光刻技术之一。

Extreme Ultraviolet Lithography ( EUVL ) is regarded as one of the most promising one among the next generation lithography .

结合极紫外光刻机的工作原理和发展现状，论述了极紫外光刻机真空工件台系统的特征、组成及其关键技术。

Based on the working principles and state-of-the-art developments of EUVL , the characteristics , construction and key technologies for vacuum stage system of EUVL are investigated .

由于材料的吸收和低折射率问题，极紫外光刻所采用的光学系统发展趋势是全反射型。

All-reflective optical systems , due to their material absorption and low refractive index , are used to create the most suitable devices in extreme ultraviolet lithography ( EUVL ) .

极紫外光刻机采用步进扫描曝光方式，成像质量不仅取决于光学系统的质量，还取决于工件台的动态定位，因此工件台系统机械结构的动态性能和光学系统的质量同样重要。

Step-scan exposure is used in EUV , the image quality depends on not only the quality of the optical system , but also the dynamic performance of the wafer stage . Therefore the dynamic performance and the quality of the mechanical structure are as important as the optical system .

极紫外投影光刻掩模技术制备纳米级ULSI的极紫外光刻技术

Extremely Ultraviolet Lithography Fabrication Technology for Nanometer ULSI Devices

极紫外投影光刻原理装置的集成研究

Development of Elementary Arrangement for Exterme Ultraviolet Projection Lithography

极紫外投影光刻掩模的多层膜与照明误差

Multilayers on Extreme Ultraviolet Lithography Masks and Illumination Error

极紫外投影光刻掩模若干问题研究远场掩模法测量单模光纤模场直径

Measurement of Mode Field Diameter of Single Mode Fibers by Far & field Mask Method

多层膜光栅是集衍射光栅的高光谱分辨率及多层膜的高反射率于一身的光学元件，在极紫外空间光谱探测、极紫外光刻等领域有着重要用途。

Multilayer-coated gratings realize the high spectral resolution of diffraction gratings and the high normal-incidence reflectivity of multilayer coatings in a single optical element , so they are widely used in extreme-ultraviolet ( EUV ) astronomical spectrometers , EUV lithography systems , and so on .

针对极紫外多层膜在激光等离子体诊断、极紫外光刻等方面的应用，进行了Mo/Si多层膜残余应力的实验研究，讨论了多层膜残余应力的成因。

Study of stress in Mo / Si multilayers is carried out for application of extreme ultraviolet multilayer coatings in the diagnosis of high density plasmas and extreme ultraviolet lithography .

目前，基于极紫外多层膜的反射式光学元件，已经全面进入了以极紫外光刻与极紫外天文观测为核心的实用化阶段。

Reflective optical elements based on multilayer coatings are have entered the practical stage that take EUV lithography and EUV astrophysics as the core .