总剂量

P沟MOSFET/FIPOS的γ射线总剂量辐照特性

Total dose γ - ray radiation characteristics of P - channel MOSFET / FIPOS

CMOS器件的脉冲γ总剂量效应初探

Initial study of pulsed γ total dose effect in CMOS devices

微电路FPGA的γ电离总剂量效应与加固技术

Total ionizing dose effects and hardening techniques of microcircuit FPGA

B组行全脑放射治疗，总剂量为30Gy/10次，然后转移灶再追加9Gy/3Fx放射治疗。

Group B underwent 30 Gy / Fx whole brain radiation therapy and 9 Gy / 3Fx for metastatic foci .

线阵CCD器件总剂量效应模拟试验研究

Simulation Experiment on Total Ionization Dose Effects of Linear CCD

CCD器件总剂量辐射损伤的剂量率效应

Dose Rate Effects on Charge-Coupled Devices from Total Dose Irradiation

线阵CCD总剂量辐照效应离线测量系统设计

Design of offline measure system for radiation damage effects on linear CCD

CMOS器件总剂量辐射响应理论模拟

Theoretic Simulation for CMOS Device on Total Dose Radiation Response

CMOS电路γ总剂量辐射效应评论

The Review of Radiation Effects of γ Total Dese in CMOS Circuits

γ总剂量辐射对CMOS器件性能的影响

The Effects of Total V Radiation Dose on the Behaviour of CMOS Devices

对其中经鼻咽CT检查证实有肿瘤残存50例补充后装近距离放疗2～4次，近距离放疗总剂量为12～18Gy；

50 cases with residual lesions documented by CT were treated by brachytherapy with a total dose of 12 ~ 18 Gy .

CMOS器件总剂量效应长线传输在线测试系统

A Long Cable Transmission On-Line Test System for CMOS Device in Total Dose Radiation

ESR测年法中样品总剂量的测定

Determination of Total Rediation Dase of a Sample in ESR Dating

不同~（60）Coγ剂量率下10位双极D/A转换器的总剂量效应

Total Dose Effect of 10-bit Bipolar D / A Converter Under Different ~ ( 60 ) Co γ Dose Rates

总剂量辐照前后CMOS器件阈电压变化的统计分析

Statistical analysis of threshold voltage changes of CMOS devices before and after total dose irradiation

MOS器件总剂量辐射加固技术研究

The Investigation of Total Dose Radiation Hardness Technique for MOS Devices

SOIMOSFET器件X射线总剂量效应研究

Study of X-Ray Total Effect in SOI MOSFET

基于虚拟仪器的CMOS器件脉冲总剂量效应在线测试系统研制

Development of pulsed total dose effect in-circuit measuring system on CMOS devices based on virtual instrument

不同辐射环境下CMOS器件总剂量效应测试技术与损伤差异研究

Total Dose Effect Test Technology and Damage Difference Study on CMOS Devices under Different Irradiation Environment

MOS器件及电路的总剂量辐射效应测试技术

Measurement of total dose effects on MOS devices and circuits

先进工艺对MOS器件总剂量辐射效应的影响

Effect of Advanced Process on the Total Dose Irradiation of MOS Device

CMOS／SOS器件亚阈区的总剂量电离辐照特性

Total Dose Radiation Characteristics at Subthreshold Range of CMOS / SOS Device

从初诊平扫CT到CT灌注扫描的进一步检查，总剂量可能难以评估。

The cumulative dose from an initial noncontrast CT scan followed by a CT perfusion study , for example , isn 't easy to assess .

发现SIMON材料具有更优良的抗总剂量辐照能力。

The results prove SIMON materials have superb ability to tolerate total-dose effect .

CMOS器件实验室总剂量辐照评估方法研究

Test and research on estimating method of total dose irradiation at laboratory environment for CMOS space electronics

MOS结构热载子注入与总剂量辐照响应的相关性

Correlations Between MOS Structures ' Responses to Hot-Carrier Injection and Total Dose Radiation

大规模集成电路浮栅ROM器件总剂量辐射效应

Total Dose Effect of Large-Scale Integrated Circuit Floating Gate ROM Devices

短沟道SOIMOSFET总剂量辐照效应模型

A Short-Channel SOI MOSFET Model Considering Total Dose Effects

MOS器件的质子总剂量效应

Total Dose Effects of Protons on MOS Devices

经导管间断灌注尿激酶，总剂量平均400万U，总时间平均40小时。

The average dose of urokinase and the duration of infusion were 4 million units and 40 hours , respectively .