外延法

金属有机物化学汽相外延法生长ZnO薄膜

ZnO Thin Films Grown by Metal Organic Chemical Vapor Deposition

用分子束外延法在CdTe上生长InSb膜

Molecular beam epitaxy of InSb films on CdTe

熔体外延法生长的截止波长12μm的InAs（0.04）Sb（0.96）的电学性质

Electrical Properties of Melt-Epitaxy-Grown InAs_ ( 0.04 ) Sb_ ( 0.96 ) Layers with Cutoff Wavelength of 12 μ m

高阶非线性间断常微分方程组的求解（变步长RUNGE外推外延法）

Numerical Solution of Higher Order Discontinuous Nonlinear Ordinary Differential Equation System ( Variable Step Length-Runge Extrapolation-Extension Method )

在LiTaO3基片上液相外延法生长LiNbO3单晶薄膜

Liquid phase Epitaxy of LiNbO_3 thin film on the LiTaO_3 Substrates

分别使用X衍射仪和紫外（190nm~800nm）分光光度仪，测量了用分子束外延法生长在SiC（001）基底面上的AIN薄膜的X衍射、透射谱和不同温度下的吸收谱。

An X-diffraction , a transmittance spectrum and absorption spectrums at different temperatures of an AIN film deposited on a ( 001 ) SiC substrate by MBE were measured on a X-diffractometer and an UV spectrophotometer ( 190nm ~ 800nm ) respectively .

采用电化学原子层外延法（ECALE）在Au电极上成功地制备了Bi2Te3化合物热电薄膜。

The Bi_2Te_3 thin film deposition on Au substrate using electrochemical atomic layer epitaxy ( ECALE ) is reported in this article .

第二章介绍了量子阱、超晶格材料的生长方法，介绍了分子束外延法（MBE），阐述了生长基理及其各部分组成，以及样品的制备。

Chapter two introduces the growth techniques of superlattice and quantum well materials , the method of molecular beam epitaxy , growth mechanism and structures , and manufacture of sample .

用分子束外延法制成了具有Au/ZnSe：Mn/n-Ge结构的电致发光单晶膜，最低起亮电压为6V。

A thin film electroluminescent ( EL ) cell having Au / ZnSe : Mn / n-Ge structure has been fabricated by molecular beam epitaxy ( MBE ) .

分子束外延法生长的Au/ZnSe：Mn/n-Ge直流电致发光单晶膜

A DC electroluminescent cell au / znse : mn / n-ge prepared by mo-lecular beam epitaxy

用质量分离的低能离子束外延法生长β-FeSi2半导体外延膜的初步研究

Study on Growth of Semiconducting β - FeSi_2 Epitaxial Thin Films by Mass-Analyzed Low Energy Ion Beam Epitaxy

提出了利用速度向量及位置信息求取照射角的方法，并与航迹外延法求照射角作比较，提出了基于照射角的雷达调度策略。

The method of obtaining it by using the velocity vector and location information is put forward , which is compared with the method of track extrapolation .

通过地质分析及实践，选用地层结构趋势外延法和声波测井曲线法计算了研究区的地层剥蚀量，并在此基础之上，对原型盆地进行了恢复。

The denudation amount of the formation is calculated by strata trend extending method and sonic-logging curve method , and base on this , the primitive basins are recovered .

本文介绍了用分子束外延法制作的梯度折射率分别限制式单量子阱GaAs/AlGaAs半导体激光器。

Single - quantum - well GaAs / AlGaAs laser with graded - index separate confinement heterostructure ( GRIN - SCH - SQW ) were fabricated by molecular beam epitaxy .

由于经典理论交集和并集的外延法不能得到满意的结果（相应的算子过于严格或是过于宽松），对这两个具有对立特性的算子进行折衷，可以得到较为满意的结果。

Extensions of classical set union and intersection do not lead to satisfactory results ( the corresponding operators are either too indulgent or too severe ), but fusing two operators that have opposite properties can obtain an obvious result .

详细介绍了各种制备氧化锌薄膜的方法，包括磁控溅射法、化学气相沉积法、喷雾热解法、溶胶凝胶法、激光脉冲沉积法、分子束外延法、原子层外延生长法。

Various growth techniques of ZnO thin films , including magnetro sputtering , chemical vapor deposition , spray pyrolysis , sol gel processing , pulsed laser deposition , molecular beam epitaxy , atomic layer epitaxy and metal organic chemical vapor deposition were reviewed .

用侧向外延生长法降低立方相GaN中的层错密度

Reduction of Stacking Fault Density in Cubic GaN Epilayers via Epitaxial Lateral Overgrowth

目前，石墨烯的制备方法主要包括：微机械剥离法、化学气相沉积法、外延生长法、氧化石墨烯溶液（grapheneoxide，GO）还原法和有机合成法等等。

So far , several fabrication routes for the production of graphene have been established , such as micromechanical exfoliation , chemical vapour deposition , epitaxial growth , the reduction of graphene oxide ( GO ) solution , and organic synthesis .

当达到这种辨别的最高境界，智慧将会外延向法界的所有七个方面。

At the ultimate level of discrimination , wisdom extends to all seven aspects of nature .

用熔体外延（ME）法在半绝缘（100）GaAs衬底上成功生长出了截止波长为12μm的InAs0.04Sb0.96外延层。

The InAs_ ( 0.04 ) Sb_ ( 0.96 ) epilayers with a cutoff wavelength of 12 μ m were successfully grown on semi-insulating ( 100 ) GaAs substrates using melt epitaxy ( ME ) .

本文首次研究了电化学原子层外延（ECALE）法室温沉积碲化铋纳米薄膜的过程。ECALE是原子层外延的电化学模拟。

Deposition of bismuth telluride thin film by electrochemical atomic epitaxy ( ECALE ) was firstly reported in this paper .

同型外延材料表面光伏法测试的分析

Analysis of the surface photo - voltage method measurements

物权的定义及物权的性质、本质、特征等法律概念的内涵与外延问题是物权法领域极为重要然而也是极为混乱的问题。

The definition of property right and other related definitions are the very important and confused problems in the legal field of property right .

界面态对p/p~+外延片高频C&V法测定杂质纵向浓度分布的影响

The Effect of Interface States on the Measurement of the Impurity Profile in p / p ~ + Epitaxial Layer by a High Frequency C-V Method

本文叙述了600℃低温液相外延和两相溶液法生长InGaAsP/InP超薄层及其特性研究。

The growth of InGaAsP / InP ultra-thin epi-layer by low temperature ( 600 ℃) liquid phase epitaxy and two phase solution techniques are described as well as the characterization of the fabricated quaternary layers .

主要从历史和比较法的角度，阐释了文化遗产范围的内涵与外延，从生态法范式重新提出了文化遗产的定义和保护范围。

The connotation and extension of the cultural heritage scope are explained in the view of the history and comparative law and the definition and protection scope of the cultural heritage is put forward in the mode of ecological law in this chapter .

因而有必要对法的渊源的含义进行考察，以重新界定国际法渊源的内涵和外延，区分国际法渊源与国际法表现形式这对经常被混淆的概念。

So it is necessary to examine the meaning of the source of law and redefine the intention and extension of the source of international law , and then , on these bases , distinguish the source of international law from the forms of international law .

减小硅外延自掺杂影响的改进的二步外延法

Improved Two-step Silicon Epitaxial Method Reducing Autodoping Effect