肖特基结

由此提出了作为优良GaAs肖特基结的金属，应具有的物理特性以及结的制作原则。

Based on these results , we are able to suggest the physical characteristics that the metal should possess and the principle for preparing the junction that should be employed in order to obtain a good Schottky junction on GaAs .

肖特基结C~（-2）-V法测定n~+埋层扩散后的n/p硅外延片表面杂质浓度

The determination of the surface impurity concentration of n / p Si epitaxial chips with buried n ~ + diffused layer by Schottky junction c ~ ( - 2 ) - v method

高斯掺杂分布GaAs肖特基结的雪崩击穿电压

Avalanche Breakdown Voltage Calculation of GaAs Gaussian Profile Schottky Diodes

本文提出了一种在光照和短路条件下测量Ni/α-Si∶H肖特基结势垒宽度的方法。

The present paper introduces an experimental method for measuring the width of illuminated and short-circuited Ni / a-Si : H Schottky barriers .

用化学沉积法制备GaAs肖特基结及其光电性质的研究

The Schottky Barriers Prepared by Chemical Deposition Method on GaAs and the Studies of their Optical and Electrical Properties

蓝宝石上硅膜（SOS）肖特基结注入电流检测的电子自旋共振及Si/Al2O3界面缺陷

ESR of Silicon Film on Sapphire Detected by Injected Current and the Defects on the Si / Al_2O_3 Interface

利用本文计算隧穿几率的方法，采用费米分布代替常用的玻尔兹曼分布优化了SiC肖特基结的电流输运模型。

The model of SiC schottky contacts is optimized in which Femi distribution is adopted instead of Boltzmann distribution based on the tunneling probabilities calculated with the presented method .

利用分子束外延（MBE）设备生长了AI/GaAs（100）肖特基结。

Al / GaAs ( 100 ) schottky barrier contact has been grown by molecular beam epitaxy ( MBE ) .

本文用改善了的化学镀液制备Au-GaAs、Pd-GaAs和钯活化的Au（Pd）-GaAs肖特基结，并讨论了沉积的化学机理。

In this paper the preparation of Au-GaAs , Pd-GaAs and palladium activated Au ( Pd ) - GaAs Schottky barriers by the chemical deposition method , using improved plating solutions , is reported and the mechanism of the chemical deposition is discussed .

漏源欧姆接触采用Ti/Al/Pt/Au，肖特基结金属为Pt/Au。

Source drain Ohmic contacts and Schottky metal system is Ti / Al / Pt / Au and Pt / Au , respectively .

重点介绍了影响其可靠性的因素如栅肖特基结和源／漏欧姆结的相互扩散及表面效应等。

Some factors influencing on its reliability are emphasized such as interdiffusion of gate Schottky contact and source / drain Ohmic contact and surface effect .

数值模拟结果表明，器件栅极电压越负，肖特基结的耗尽层越厚，源漏电流越小；

The results show that while the gate biases are more negative , the Schottky depletion layer is thicker and the source-drain current flow is lower .

Ni/Si（110）的固相反应特性及肖特基结电学特性研究。

The study on solid phase reaction in Ni / Si ( 110 ) system and the characteristics of NiSi / Si ( 110 ) Schottky contact .

表面氢化处理的优点在于避免了欧姆接触所需的800～1200℃的高温合金，降低了工艺难度，改善了肖特基结的电学特性。

Its advantages lay in avoiding the high-temperature annealing at 800 ~ 1 200 ℃ for conventional Ohmic contacts , decreasing technical difficulty , and improving the electric performances of SiC Schottky junction .

MESFET肖特基势垒结参数提取及I-V曲线拟合

Parameter Extraction and I-V Curve Simulation of the MESFET 's Schottky Junction

为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了PN结和肖特基结的特性。

In order to comprehend schottky gate of organic static induction transistor , chapter two expatiates characteristics of PN junction and schottky junction .

对硅化钯-P型硅肖特基势垒二极管（SBD）的界面性质作了AES谱和EBIC像分析，估算了PdxSiy层厚度和肖特基结的结深。

The interface property of palladium silicide-silicon ( P-type ) Schottky Barrier Diode ( SBD ) has been studied by AES spectrum and EBIC image . The thickness of Pd_x Si_y layer and the deepness of schottky " junction " are estimated .