微波晶体管

微波晶体管放大器CAD

CAD of microwave transistor amplifier

该放大器为了实现从DC到2.6GHz的带宽，保证有足够的增益和理想的增益平坦度，采用了负反馈结构，两级级联，并选用了一种结构新颖的微波晶体管。

This amplifier utilizes negative feedback structure and a two stage cascade , selects a novel microwave transistor , thus it can ensure the bandwidth , the enough power gain , and the satisfying flatness .

基于Z参数的微波晶体管高频噪声网络分析方法

Network Analysis of High Frequency Noise of Microwave Bipolar Transistors Based on Z Parameters

自掩蔽结构的GaAs异质结双极型微波晶体管

Self-Alignment Structure for Npn GaAs Heterojunction Microwave Bipolar Transistors

本课题采用微波晶体管的饱和输出特性设计了X波段限幅放大器。

A X band microwave limiting amplifier is realized according to the theories of the output power saturation characteristics of HEMT .

用于MMIC硅基双极型高频微波晶体管结构、性能研究及工艺开发

A Study of the Structure and the Performance of Microwave Silicon Bipolar Transistor Using for MMIC and Its Process Development

全离子注入双极硅微波晶体管E-B结低、软特性浅析

A Brief Analysis on Breakdown Characteristics of Emitter-Base Junctions in Fully Ion-Implanted Si Bipolar Microwave Transistors

由于利用代数消去法，去除了嵌入参量相位不确定性引入的误差，LRL法可用于微波晶体管测试夹具的去嵌入。

The errors caused by the phase uncertainties of embedded parameters are deleted . In addition , LRL method can be used to de - embed the S parameters from the microwave transistor test fixture .

本文介绍一种性能优良的高速脉冲放大器电路，它由三只3DG85C微波晶体管构成。

A high speed Pulse amplifier with excellent performance is developed .

提高微波晶体管S参数测量精确度的实用技术

A Practical Technology to Improve Measurement Accuracy of Microwave Transistor S-parameter

掺砷多晶硅在微波晶体管中的应用

The Application of Arsenic Doped Polycrystalline Silicon for Microwave Transistors

对微波晶体管振荡器的相位噪声进行了分析。

The phase-noise of microwave bipolar transistor VCOs is discussed .

射频微波晶体管的发展现状及分析

Developing Status and Analysis of RF / Microwave Transistors

最佳近似匹配在微波晶体管放大器中的应用

Application of Approximate Optimum Match in Microwave Transistor Amplifiers

微波晶体管振荡器设计的最优化方法

Optimum method of the design of microwave transistor oscillator

微波晶体管三口S参数与双口S参数的互换

The Interchange between the Three-port and the Two-port S-parameters of a Microwave Transistor

微波晶体管、场效应管管芯的不等波纹函数型阻抗匹配网络

The Unequiripple Function Type Impedance Matching Network for Microwave Transistor or FET Chip

微波晶体管散射矩阵的数值计算

Numerical Algorithm of Scatter Parameters of Microwave Transistor

微波晶体管S参数的自动测试ZXT-1自动实时巡回检测系统已在鞍钢运行并通过鉴定

Automatic Test of S-parameters of Microwave Transistors

禁带宽度变窄和杂质非全离化对硅双极微波晶体管特性的影响

The influence of bandgap narrowing and impurity deionization on th characteristics of silicon bipolar microwave transistors

简述了微波晶体管S参数自动测试的必要性和迫切性。

This paper describes necessity and urgency of automatically testing the S-parameters of microwave transistors shortly .

微波晶体管电流增益和基极电流非理想因子的温度特性

Temperature Dependence of the Current Gain and the Nonideal Component of Base Current in Microwave Transistors

微波晶体管放大器最优化设计中均方误差目标函数的探索

An Approach to the Mean-Square Error Objective Function for the Optimization Design of Microwave FET Amplifers

本文叙述一种10厘米波段低噪声微波晶体管放大器的设计。

In this paper , the design of a low noise microwave transistor amplifier at10cm-band is described .

微波晶体管参数的测量方法

Measurements of Microwave Transistor Parameters

该低噪声放大器主要由输入匹配网络、微波晶体管放大器和输出匹配网络组成。

LNA involves three parts : the input matching network , the transistor and the output matching network .

分析并比较了微波晶体管和行波管的优缺点，根据放大系统指标对放大管进行选择。

We compare the microwave transistor and traveling wave tube and choose them based on the amplification parameter .

从微波晶体管、场效应管管芯的单向化模型出发，给出了对微波宽带放大器的不等波纹函数型阻抗匹配网络综合方法。

The synthesis procedure of the unequiripple function type impedance matching networks is given for the RC series and parallel load .

提出了一种新的设计微波晶体管放大器的电路模型，给出了通用优化设计程序。

This paper presents a new circuit model for designing a microwave transistor amplifier , and gives a general optimum programing .

利用不定S矩阵的等余子式和矩阵性质，导出了微波晶体管三口S参数与双口S参数的互换关系式。

By means of the equal-cofactor-sum property of the indefinite scattering matrix , the interchange relations between the three-port and the two-port S-parameters of a microwave transistor have been derived .