肖特基接触

用快速退火形成W5Si3，/GaAs肖特基接触

The Formation of W_5Si_3 / GaAs Schottky Contact by RTA

Al/PtSi/Si肖特基接触的AES研究

An investigation of al / ptsi / si Schottky contact by AES

金属Au与薄膜之间属于肖特基接触。

The contact between Au and film is schottky contact .

SiC肖特基接触的直接隧穿效应

Direct Tunneling Effect in SiC Schottky Contacts

VLSI中钛硅化物肖特基接触特性与退火条件

Schottky Contact Property and Annealing Condition of Titanium Silicides in VLSI

硅化物与GaAs肖特基接触的快速退火特性

Rapid Thermal Annealing Properties of Silicide GaAs Contact

Pt/Si和Pd/Si肖特基接触的XPS研究

An Investigation of Pt / Si and Pd / Si Schottky Contacts by XPS

可调节势垒高度的Al／Si（1&x）Gex肖特基接触

Al / Si_ ( 1-x ) Gex / Si Schottky Contacts with Controllable Barrier Heights

本文从金属半导体接触的实验过程入手，阐述了本文所建立的SiC欧姆接触模型所涉及到的半导体器件物理理论，包括金属半导体肖特基接触理论、Nn异质结理论和nn~+理论。

This thesis expatiates all the physics of the SiC ohmic contacts models , which have been developed by experiments , include metal-semiconductor schottky contact theory , Nn heterojunction and nn + theory .

采用O2等离子体及HF溶液对AlGaN/GaN异质结材料进行表面处理后，Ni/Au肖特基接触特性比未处理有了明显改善，反向泄漏电流减小3个数量级。

After pre-metallization processing of AlGaN / GaN heterostructure with O_2 plasma and HF solution , the Ni / Au Schottky contact characteristics were improved obviously and reverse leakage current reduced by three orders .

TiSix/GaAs肖特基接触的退火特性

Annealing Properties of TiSi_x / GaAs Contacts

用XPS测量了Pt/InP肖特基接触界面的芯态谱和价带谱，结合AES测量，提出了在界面形成磷化铂的实验证据。

The spectra of the core level and valence band at Pt / InP Schottky contact inter-face have been measured by XPS , experimental evidence of platinum phosphide for-mation at the interface has been suggested combinding AES measurement .

Pt-ZnO纳米肖特基接触的电学特性

Electrical characteristics of Pt-ZnO Schottky nano-contact

用电流-电压和电容-电压（I-V/C-V）技术在90K到室温的温度范围内测量了CoSi2/Si肖特基接触特性。

The CoSi 2 / Si Schottky contacts are measured with the current-voltage and capacitance-voltage ( I-V / C-V ) techniques within the range of temperature from 90K to room temperature .

采用微电子平面工艺，高真空电子束蒸发金属Au做肖特基接触，多层金属Ni、Ti、Ag合金在背底上做欧姆接触，制作出Au／n-4H-SiC肖特基势垒紫外光电二极管（Uv-SBD）。

With microelectronics plane technology , electron beam evaporation is used to deposit metal Au on the surface of n-4H-SiC to form Schottky contact , alloys Ti . Ni . Ag used to form Ohmic contact on the n + backside , the Schottky barrier ultraviolet photodiode has been fabricated .

用弹道电子发射显微术研究超薄金属硅化物/硅肖特基接触

Ultra-Thin Metal-Silicide / Si Schottky Contacts Studied by Ballistic Electron Emission Microscopy

但是，在这些结构中，稳定的肖特基接触和欧姆接触显得非常重要。

However , a reliable Schottky or Ohmic contacts on GaN is critical for these devices .

过渡层和界面电荷对金属硅化物/硅肖特基接触特性的影响

The Effect of Gradual Interface Layer and Interface State Charge on the Metal Silicide-Silicon Schottky Contact Behavior

金属一半导体接触（欧姆接触和肖特基接触）是所有半导体电子器件和光电子器件的核心结构之一。

Metal-semiconductor contacts including Ohmic contact and Schottky contact are the essential parts of virtually all semiconductor electronic and optoelectronic devices .

在近表面单晶层上作成了性能良好的肖特基接触，其势垒高度约为0.7V。

On the near surface monocrystalline GaAs layer , a better Schottky contact with a barrier height of 0.7V has also been fabricated .

钴镍与多晶锗硅的固相反应和肖特基接触特性

Solid-Phase Reaction Between Co , Ni / n-poly-Si_ ( 0.84 ) Ge_ ( 0.16 ) and Schottky Barrier Properties of the Formed Contacts

其中Cu/CuPc形成欧姆接触做阳极，CuPc/Al形成肖特基接触做阴极。

The Cu / CuPc that form ohmic contact act as anode of the devices , CuPc / Al that form Schottky contact act as the cathode .

计算结果表明，肖特基接触下串联电阻是肖特基势垒二极管总电阻的重要组成部分，是不能忽略不计的。

The results showed the series resistance under the Schottky contact is an important part of the whole SBD resistance , and can not be neglected . 2 .

模拟结果显示源极肖特基接触的势垒高度是影响器件特性的主要因素，随着温度升高，器件的特性将变得更好。

The simulated results show that the barrier height at source contact greatly affects on the device performance and its feature will have more improvement as operational temperature rises .

指出其失效主要是由器件表面的5102钝化层在辐照时电离产生的固定正电荷和界面态导致。肖特基接触特性在辐照后下降也是重要原因之一。

It was concluded that the positive charge in SiO2 passivation layer on the surface and the interface states at interface , produced by ionization , were the primary reasons of the failure .

本论文研究由金属与C（60）富勒烯材料形成的肖特基势垒接触二极管。

In this thesis , we aimed our research at metal-C_ ( 60 ) Fullerene Schottky barrier contact , which is the typical structure of C_ ( 60 ) diodes .

高频C-V法在肖特基势垒接触退化失效分析中的应用

Application of the High Frequency C-V Method in the Failure Analysis of Schottky Barrier Contact Degradation

AES分析表明，应力试验后的样品，其肖特基势垒接触界面出现模糊，有明显的互扩散和反应发生。

AES indicates that interaction , between gate metallization and GaAs active layer , happens and the Schottky contact interface becomes ambiguous after stressing .

金属/氮化物肖特基势垒和欧姆接触是蓝紫光光学器件及高温大功率电子器件中的关键工艺。

The Schottky barrier and ohmic contacts at metal / ⅲ - nitride interfaces are the key technology to develop the blue and ultraviolet optical devices and high temperature , high power electronic devices .