发光管

InGaAsP/InP边发光管特性的研究

Study of characteristics in the ingaasp / inp edge-emitting led 's

GaInAsP/InP双异质结发光管材料的研究

The study of gainasp / inp double heterojunction LED material

超辐射发光管端面AR膜的设计与制备

Design and fabrication of AR film for super-luminescent diode facets

光电传感器由发光管（LED）和光敏管（PT）组成，用于识别选票上的信息符号。

Photoelectric sensor which identify the information symbol of votes is composed of LED and PT .

GaAs红外发光管芯片的表面性质

Surface Properties of GaAs IR LED Chips

提高InGaAsP/InPDH面发光管输出光功率的研究

Investigation of light power output increase of InGaAsP-InP DH surface LEDs

高亮度GaAlAs红色发光管设计中的几个问题

Some Problems in the Design of Red GaAlAs LED with High Brightness

在光学系统中，采用了高性能的LED发光管组成的阵列光源，采用了折反式光路，减小仪器体积。

In optical system , several high-powered LED was employed as array lighting source , the optical route is designed as pulldown type , so the size of instrument can be reduced .

GaN基发光管在节约能源方面有着巨大的应用前景，而使用GaN基半导体光子探测器代替真空管进行紫外探测，也有其重大的应用背景。

GaN-based light emitting devices have a great prospect in saving energy . GaN-based semiconductor photodetectors will take the place of vacuum tube devices in ultraviolet detection area .

根据本文提出的探纬检测方法设计探纬器和探纬器信号处理电路，在探纬器设计中选用红外发光管，用脉冲信号进行驱动，光电管选用PIN型硅光电二极管。

According to the weft detection method proposed by the paper , designed signal processing circuit and feeler , LED was driven with the pulsed signal , photoelectric silicon PIN photodiode is used .

论文以红绿蓝三种颜色LED发光管所发出的光为三原色，以颜色相加原理为理论基础，以CIE色度系统为应用基础，论述了三原色配色的计算，确定了三原色的配色比例；

The paper dissertates the calculation of color matching with tricolor based on the color mixing theory and CIE chromaticity system and makes the light of red , green and blue LED be the tricolor .

GaAlAs快速边发光管发射端面沉积Al2O3抗反射层的研究较详细地研究了工艺参量H2O/TEOS摩尔比对薄膜结构和性能的影响。

INVESTIGATION OF A1_2O_3 ANTIREFLECTIVE COATING FOR GaAlAs HIGH SPEED LEDs The dependence of the H 2O / TEOS molar ratio on the structure and performance of the SiO 2 antireflective coating was studied in detail .

氮化镓（GaN）基宽禁带半导体材料是制备高温、高功率、高频电子器件以及发光管、紫外探测器等光电子器件的重要材料。

Gallium Nitride ( GaN ) based wide direct bandgap semiconductors have become the most important materials for high temperature , high power , high frequency electronic devices as well as for light emitting diodes , laser diodes , ultraviolet photodetectors .

超辐射发光管（SLD）可以作为光纤陀螺（FOG）、波分复用光纤通讯及光处理技术、光时域反射仪（OTDR）等的光源，近些年来在国内外多有研究。

Superluminescent diodes ( SLD ) are required as light sources for many applications including fiber optical gyroscopes ( FOG ), and for wavelength division multiplexing ( WDM ) optical fiber communication and testing systems , and also for optical time domain reflectometers ( OTDR ) .

新型圆柱结构的场发射碳纳米管发光管

Investigation of Carbon Nanotubes Field Emitting Light Tube of Novel Cylinder-Shaped Structure

并五苯场效应发光管机理分析与场效应管制作

Analysis and Fabrication of Light-emitting Field-effect Transistor Based on Pentacene

一种新型基于三色发光管测色的算法及仪器设计

New Algorithm of Color Measurement Based on Triple Luminotrons and Instrument Design

温度计的指示器由发光管制成。

The indicator of the thermometer is made of LED modulator tubes .

InGaAsP/InP双异质结发光管暗缺陷的观察和研究

Observation and Study on the dark defects in ingaasp / inp double-heterostructure LEDs

1.55μm超辐射发光管端面减反射膜的研究

Facet antireflection coating of 1.55 μ m superluminescent diode

超辐射发光管出射光谱的理论计算和实验验证光谱辐（射）出（射）度

Theoretical Calculation of SLD Output Spectrum and Experimental Verification ; spectral radiation exitance

等值图在测距仪发光管相位测定中的应用

The Usage of Isogram in the Phase Measurement of a Distance Meter Shining Tube

InGaAsP/InP双异质结发光管中的深能级

Deep level in ingaasp / inp DH LED

深能级杂质对InGaAsP/InP发光管输出功率饱和性的影响

Deep level impurity effect on the output power saturation in ingaasp / inp LED

InGaAsP/InP双异质结发光管退化特性的研究

The study of degradation characteristics for the ingaasp / InP double heterojunction light emitting diodes

非对称波导GaAlAs/GaAs快速边发光管的几何结构及性能

Stripe Geometry and Performance of High Speed GaAlAs / GaAs Edge-Emitting LED with Asymmetrical Waveguide

InGaAsP/InP双异质结发光管光功率的温度和饱和特性

Characteristics of Temperature and Output Saturation in InGaAsP / InP Double Heterostructure Light Emitting Diodes

长波长1.3μm激光器腔面镀减反射膜超辐射发光管的制备

Fabrication of long wavelength 1.3 μ m superluminescent diodes with antireflective coatings on laser diode facets

砷化镓面发光管输出光功率某些问题的探讨

Investigation of problems about the light power output of gaas / gaalas DH surface emitting diodes

有源层受主浓度对InGaAsP/InP双异质结发光管特性的影响

The dependence of characteristics of ingaasp / inp DH LEDs on acceptor concentration of active layer