反向电压

硅整流器，通用，高电压，标准回收率（表面贴装）。经常性最大峰值反向电压400V。最大平均正向整流电流1A。

Silicon rectifier , general purpose , high voltage , standard recovery ( surface mount ) . Max recurrent peak reverse voltage400V.Max average forward rectified current1A .

采用优化后的p-GaN制作了绿光发光二极管器件，发现生长温度越低器件发光强度越高，反向电压也越高，但正向电压只是略有升高。

We found that when the growth temperature is lower , the luminescence intensity and reverse voltage is higher but the forward voltage increases slightly .

结果表明，器件具有整流效应，正反向电压分别为8V和12V；

The results show that the device is of diode characteristics with its forward bias and reverse bias of 8 V and 12V , respectively .

在新的设计中采用了开关型恒流PFN充电电源，计算了充电参数，建立了主放电回路的仿真模型，重点分析了电路中反向电压问题，依据仿真结果及分析设计了反向保护电路。

Simulation model of main discharging circuit was established . An emphasis of analysis was put on the reversal voltage problem . A protection circuit was designed based on the simulation results and reversal voltage study .

3固体钽电容器为极性电容器，不适宜在加反向电压条件下使用。

Solid tantalum capacitors are polar capacitor . Reverse voltage is not permissible .

不重复峰值反向电压

Non repetitive peak reverse voltage

施加反向电压以增大穿隧间隙，提高电阻，可以重新将开关断开。

Applying the opposite voltage bias to widen the tunneling gap and raise the electrical resistance would reopen the switch .

在放电回路中设计了放电可控硅施加反向电压电路，以强制关断；

To force to turn off the circuit , a circuit with reverse voltage applied to discharged SCR is designed in discharged loop .

该器件可通过正向及反向电压脉冲的激发而实现高阻态（0态）、低阻态（1态）的转变，相当于信号的写入和擦除。

The switching device can be written from a high-resistance state to a low-resistance state by a voltage pulse and then be erased by a reverse voltage .

该状态空间方程具有线性特性，因此可以利用叠加原理将电压跌落的瞬态过程看成是稳定运行状态和加反向电压的运行状态两种情况的叠加。

The state-space equations have linear features , so use the superposition principle to see the voltage dip transient process as the two cases of the operational status of the steady state and reverse voltage .

本文分析表明，带整流器励磁的同步发电机，当两相短路或三相短路以及短路切除恢复到电网电压的瞬态过程中，在励磁绕组两端可能感生高反向电压。

In this paper , analysis shows that large reverse voltage may be induced across the field winding during the transient processes of synchronous generator with rectifier excitation when a line to line or 3-phase short circuit fault as well as the short circuit clearing with grid voltage recovery .

高频群脉冲电解加工中IGBT反向尖峰电压的数学模型

The Mathematical Model of IGBT Reverse Spike Voltage in High Frequency Group Pulse Electrochemical Machining

但就制备高反向击穿电压的微波PIN二极管而言，这些工艺已不能满足要求。

But as concerning microwave PIN diode of high breakdown voltage , the craft can 't already meet the demands .

结果表明键合工艺制备PIN二极管不仅制造成本低，工艺简单，而且界面缺陷少，反向击穿电压高。

The results show that bonding PIN diodes are not only low fabrication cost , simple technology , but also few defects and high breakdown voltages .

APD的增益可以由反向偏置电压的幅度来控制。

The gain of the APD can be controlled by the magnitude of the reverse bias voltage .

给出了快速二极管软度K的新定义；推导出快速二极管反向过电压与软度K的关系，经试验证实了软度K与反向过电压的对应关系。

A new definition of reverse recovery softness K of fast diodes is given , and the relationship of reverse over voltage to the softness K of the fast diode is derived and verified by experiment .

通过利用突变结PIN理想结构电场分布模型，分析了该结构发光二极管（LED）反向击穿电压与非故意掺杂有源区厚度的线性相关性。

The linear relation between the reverse breakdown voltage and un-doping active region ′ s thickness of PIN light emitting diode ( LED ) was analyzed by using the ideal PIN structure ′ s electric field distribution model .

得到较为理想的反向击穿电压VBR，正向压降VF，反向恢复时间trr三参数之间的折衷。器件性能优良，可靠性高，样品通过150℃／168小时的高温反偏实验。

The excellent selections of breakdown voltage , forward voltage and reverse recovery time were obtained and the reliability of the device was pretty good .

泵浦条件是影响SOS特性的最主要因素，泵浦电压越高，所产生的反向过电压系数越高。

The pumping condition is one of the most important influence factors for SOS characteristics . The higher the pumping voltage is , the higher the reverse over-voltage coefficient is .

源漏击穿电压和栅反向击穿电压分别为4V和7.5V。

Drain to source breakdown voltage and Schottky breakdown voltage are 4 V and 7.5 V , respectively .

重点说明了反向补偿电压的产生，补偿电阻与输入电压Usr的关系，先常规后反向电压补偿双积分A/D转换的工作过程和原理。

Put great emphasis on explaining the forming of opposing voltage , the relation of the compensating resistance and the input voltage , the work process and principle of first routine then backward voltage compensation double integral A / D conversion .

首次提出了一种新型复合集电区结构，较好地解决了SHBT（单异质结双极晶体管）反向击穿电压低，DHBT电子堆积且与PIN探测器（PIN-PD）无法外延共享的问题。

A novel composite collector layer structure is presented for the first time , which better solves the poor breakdown voltage of SHBT ( single heterojunction bipolar transistor ) and the electron blocking efforts of traditional DHBT .

微条粒子探测器的反向击穿电压最高达240V，反向漏电流密度最低为0.025μA/mm2。

Their highest reverse breakdown voltage is 240 V , and the lowest reverse leakage current density is 0.025 μ A / mm 2.They have high illumination-sensitivity .

同时测试分析了该器件的IV特性：在室温下，正向开启电压为0.8V，反向击穿电压大于200V，反向漏电流小于10-10A；

The I V characteristics have also been measured . At room temperature , the forward turn on voltage is 0.8 V , the reverse breakdown voltage is higher than 200 V , and the leakage current is smaller than 10 - 10 A.

电子辐照对半导体器件反向击穿电压的影响

Influence of electron irradiation on backward breakdown voltage of semiconductor devices

同步电机整流励磁回路反向过电压的分析计算模型

Analytical Model for Prediction Field Overvoltages in Synchronous Machines with Rectifier Excitation

化学腐蚀形成台面提高反向击穿电压；

Using chemical mesa etching to increase the breakdown voltage .

反向击穿电压可能和作用区的宽度有关。

The reverse breakdown voltage may be related to the width of the active region .

反向击穿电压取决于晶态衬底的电阻率。

The reverse breakdown voltage is dependent on resistivity of the cry - stalline substrate .

衡量二极管质量的一个方面就是在规定的反向偏置电压下的泄漏电流。

One measure of the quality of a diode is its leakage current at a specified reverse bias voltage .