金属氧化物半导体场效应晶体管

提出并制作了一种全新的平面分离双栅金属氧化物半导体场效应晶体管，该器件垂直于沟道方向的电场为一非均匀场。

The characteristics , experiment , and three dimensional device simulations of a new planar split dual gate ( PSDG ) MOSFET device are reported for the first time .

本文首先给出了SOI上纳米金属氧化物半导体场效应晶体管（NANOMOSFET）的结构，它是一种非传统MOSFET。

The structure of nanoscale metal oxide semiconductor field effect transistor ( NANO MOSFET ) is introduced .

本文提出了一种新型SiC金属氧化物半导体场效应晶体管（MOSFET）结构&SiC肖特基势垒源漏MOSFET。

A novel SiC Schottky Barrier Source / Drain Metal-Oxide-Semiconductor Field-Effect Transistor ( SiC SBSD-MOSFET ) is proposed in this dissertation .

读写金属氧化物半导体场效应晶体管

MOSFET ( metallic oxide semiconductor field effecttransistor ) read-write MOSFET

沟道大电流感应n沟金属-氧化物-半导体场效应晶体管栅氧化层的加速击穿

Channel-Current-Induced Gate-Oxide Breakdown Acceleration in N-Channel MOSFET 's

研究不同类型、不同沟道长度的n沟金属－氧化物－半导体场效应晶体管（MOSFET）在不同栅电压下工作时栅氧化层的击穿特性。

This work extensively examines gate-oxide breakdown behaviors of n-MOSFET 's including both enhancement-type and depletion-type devices with various channel lengths under different operating conditions .

研究了恒压应力下超薄栅氧化层n型金属-氧化物-半导体场效应晶体管（n-MOSFET）软击穿后的导电机制。

The conduction mechanism of ultra-thin gate oxide n-metal-oxide-semiconductor field effect transistor ( n-MOSFET ) after soft breakdown is studied in this paper .

用蒙特卡罗-泊松方程自洽求解的方法，对深亚微米金属-氧化物-半导体场效应晶体管&MOSFET的电特性进行了模拟。

An efficient , self-consistent method of Monte Carlo and Poisson equation is used to simulate the electrical characteristic of deep submicron metal-oxide-semiconductor field effect Transistor ( MOSFET ) .

增强型耗尽型模式金属氧化物半导体耗尽型肖特基场效应晶体管

Enhancement depletion mos depletion metal schottky fet