晶体管输出

该数显仪表可以直接和晶体管输出型的各类PLC连接，实现PLC系统的数据显示功能。

This digital display meter may directly connect with a transistor - output PLC and display data of PLC system .

在2GHz短脉冲工作条件下，该晶体管输出功率70W，增益8.5dB，集电极效率50%。

The transistor produces 70 Watts of output power with 8.5 dB of gain and 50 % collector efficiency at 2 GHz and for short pulse operation .

大信号晶体管输出等功率曲线的搜索算法

The Tracking Algorithm for the Output Power Contour of the Large Signal Transistor

微波功率晶体管输出功率和增益测试

Measurement on microwave transistor output power and gain

介绍了因单个高频大功率晶体管输出能力有限而采用多管并联运用（积木式）的方法。

Introduced the method of multi-transistor modular design , for the output ability are limited in single high-frequency power transistor .

此外，振荡器应该使用被晶体生产厂商建议的分立的双极型场效应晶体管输出。

Furthermore , the oscillator should use discrete bipolar and FET devices in the circuits recommended by the crystal manufacturers .

针对晶体管输出型光电耦合器的结构组成，详细阐述了其噪声理论、辐照机理和辐照效应，建立了光电耦合器的辐照噪声测试系统。

For the composition of the optocouplers with transistor output , the noise theory , radiation mechanism and radiation effect are expounded , establishing an irradiation noise test system .

举例说明，20兆赫兹的峰点是钳位过程结束后主要由场效应晶体管输出电容和变压器漏感引起的寄生振荡产生的。

For example , the peak at20 MHz in the spectrum is caused by the parasitic oscillation due to the output capacitance of the MOSFET and the leakage inductance of the transformer .

另外，场效应晶体管的输出阻抗低，与检测电路的连接线不用屏蔽，不受外来电场的干扰，可以简化测试电路。

Furthermore , the output impedance of FET is very low , and the line linking FET biosensor and testing circuit does not need to be shielded , which simplifies the design of testing circuit .

本课题采用微波晶体管的饱和输出特性设计了X波段限幅放大器。

A X band microwave limiting amplifier is realized according to the theories of the output power saturation characteristics of HEMT .

为实现更好的阻抗匹配，再用ADS优化匹配网络，使其阻抗值更接近功率晶体管的实际输出阻抗值。

In order to make impedance matching well , use ADS software to optimize the matching network again , make it 's impedance approach power transistor 's actual output impedance .

该低噪声放大器主要由输入匹配网络、微波晶体管放大器和输出匹配网络组成。

LNA involves three parts : the input matching network , the transistor and the output matching network .

分析了电路参数对晶体管弧焊电源输出频率、电流波形、外特性曲线形状及晶体管工作状态的影响。

An overview is given about the influences of circuit parameters on frequency of the power supply , current-curve , V-A-curve , as well as working conditions of the transistor power supply .

硅LDMOS晶体管以其大输出功率和高效率等优点作为微波功率放大器广泛应用于雷达发射机中。

Si-based LDMOS transistor is widely used as power amplifier in radar transmitter for its advantages of high output power and efficiency .

非晶硅薄膜晶体管中不饱和输出电流的数值仿真

Numerical Simulation of Unsaturated Output Current of Amorphous-Silicon Thin-Film Transistors