反向漏电流

给出了一种计算4H-SiCMESFET夹断电压的精确模型，考虑杂质的非完全离化、界面态、反向漏电流等的影响。

A more precise model of the pinch-off voltage of 4H-SiC MESFET is given , with the effects of incomplete ionization of dopants , the interface states and the reverse current are considered .

老化前后Ⅰ-Ⅴ曲线结果显示，反向漏电流和正向小电压下的电流都有明显的增加。

Reverse current and forward current at low bias were increased significantly .

钝化处理对GaN基LED反向漏电流特性的改善

Improvement on GaN-based LED Reversed Leakage Current Characteristic by Passivation Process

此外，所生长n-ZnO/p-Si异质结的I-V特性曲线都表现明显的整流特性，且反向漏电流很小。

Current-voltage ( I-V ) characteristics of all n-ZnO / p-Si heterojunctions exhibit non-linear and rectifying characteristics with a small current leakage in the reverse direction .

通过Ⅰ-Ⅴ测试技术，观察到在1MeV的小注量电子辐照后，GaN肖特基二极管的电流&电压特性退化，击穿电压明显减小，反向漏电流逐渐增大。

The effects on I-V characteristics observed in the Schottky diodes indicated that even a light-dose irradiation would obviously reduce the reverse breakdown voltage but slightly enlarge the reverse leakage current .

引入了较为灵敏的肖特基势垒特性测试，结合肖特基势垒高度拟和和反向漏电流测试来观察Cu经过扩散阻挡层、NiSi后对界面特性的影响。

A sensitive electrical characterization method of Schottky Barrier Characterization combining with Schottky Barrier Hight ( SBH ) fitting and inverse current testing was also introduced to indirectly perceive the influences of copper through the diffusion barrier and NiSi layer on the interfacial characteristics .

分析了Ni-Salicide浅结反向漏电流产生的机理，研究了不同的工艺条件对浅结反向漏电流的影响。

We analyzed the mechanism of the reverse leakage current for Ni-salicide shallow junction and studied the effect of the different process condition on the reverse leakage current .

当探测器工作在全耗尽偏压下，每一条的反向漏电流的典型值<2nA。对239Puα粒子的能量分辨为0.5%-0.9%，相邻条之间的相互影响（crosstalk）为4%～8%。

A reverse leakage current of less than 2nA and an energy resolution of 0.4 % - 0.9 % ( for Pu α particles ) and a crosstalk between neighboring strips of 4 % - 8 % have been obtained when the detector was operated in full depletion condition .

并对实验结果进行分析模拟，理想因子为1.73，肖特基势垒高度为1.25V，实验表明，该器件具有较好的正向整流特性和较小的反向漏电流。

The measurements of the I-V characteristics of these diodes have been analyzed and simulated and the ideality factor has been found at 1.73 and the Schottky barrier height at 1.25 V. The diodes show good rectifier property and a low leakage current .

半导体器件反向漏电流的高灵敏度测量

High Sensitivity Measurement of Reverse Leakage Current of Semiconductor Devices

铝/多孔硅结具有良好的整流特性，在-10V内反向漏电流小于50nA，理想因子为7。

The reverse bias leakage current within - 10 V is less than 50 nA .

讨论了造成力敏电阻非线性、电漂移、漏电流的各种因素，还提出一个表明零点热漂移和反向漏电流之间与传统公式不同的关系式。

In addition , an expression to show the relation between thermal drift of the offset and the reverse leakage current is presented , which is different from the traditional one .

该条件退火后高电子迁移率晶体管最大跨导提高8.9%，肖特基栅反向漏电流减小2个数量级，阈值电压绝对值减小。

Under this condition the maximum transconductance is raised by 8.9 % , the reverse leakage of schottky gate is reduced by two orders of magnitude , and the threshold voltage moves toward the positive direction .

指出过去在标征压力传感器的指标时，忽略了力敏电阻的非线性、零点电漂移、反向漏电流，但是这些问题对压力传感器的质量却有很大的影响；

It is pointed out in this paper that the problems about the non-linearity of piezoresistors , electric drift of the offset and reverse leakage current were omitted in characterization of pressure sensors , but they have great influence upon the quality of pressure sensors .

它具有窗薄、灵敏区宽、反向耐压高、漏电流小、能量分辨率高、稳定性好等特点。

They possess features as thin window , wide sensitive region , high bais voltage , low leakage current , high energy resolution , good stability etc.

试验证明，增加扩铂温度，减小扩铂时间可以有效的解决反向恢复时间和漏电流之间的折衷问题。

The results revealed that the tradeoff of reverse recovery time and the leak current can be improved efficiently by increasing the temperature and decreasing time of the platinum diffusion .

报告了改变质子注入剂量对二极管反向恢复时间和反向漏电流等参数的影响。

The influence of proton irradiation dose on the performance of the diode is reported .

同时测试分析了该器件的IV特性：在室温下，正向开启电压为0.8V，反向击穿电压大于200V，反向漏电流小于10-10A；

The I V characteristics have also been measured . At room temperature , the forward turn on voltage is 0.8 V , the reverse breakdown voltage is higher than 200 V , and the leakage current is smaller than 10 - 10 A.

在反向偏压100V下，样品的反向漏电流小于10-10A，说明样品的反向特性良好。

Under a reverse voltage about 100 V , the reverse leaky current is below 0.1 nA .

微条粒子探测器的反向击穿电压最高达240V，反向漏电流密度最低为0.025μA/mm2。

Their highest reverse breakdown voltage is 240 V , and the lowest reverse leakage current density is 0.025 μ A / mm 2.They have high illumination-sensitivity .