光电压

用于IC氧化层和氧化炉管在线监控的表面光电压技术

The Application of Surface Photovoltage Technology in Monitoring Gate Oxide and Oxidation Furnace System

气体吸附对SnO2／Si光电压的影响

Effect of the gas adsorption on the photovoltage of SnO_2 / Si

表面光电压技术在Si外延过程中的应用

SPV Application in Silicon Epitaxial Process

TiO2纳米粒子包覆聚苯乙烯球的结晶性能与表面光电压特性

Crystallization and Surface Photovoltage Properties of Polystyrene Coated by TiO_2 Nanoparticles

设样品的少子产生率仅是一维坐标的函数，计算了P型双面抛光硅单晶样品的表面光电压。

The surface photovoltage of P-type crystal silicon wafer polished both sides was calculated on the assumption that the minority carrier generation of sample is only a function of one dimension coordinate .

测量得到的光电压与增益、光强、动态阻抗和温度的关系可用类似于CO分子光电流的解析式来表示。

Dependence of opto-galvanic voltage on the gain , intensity , dynamic resistance and temperature measured can be expressed by a solution similar to that OGE of 00 molecule .

载有卟啉的介孔SBA-15表面光电压的性质研究

The surface photovoltaic property of porphyrin encapsulated in mesoporous molecular sieves SBA-15

测量了SnO2／Si表面吸附H2、液化石油气等还原性气体前后光电压的变化；

The changes of photovoltage when the SnO_2 / Si surface adsorbed reducing gas ( H2 , liquified petroleum ) are measured .

酞菁锡（SnPc）多晶薄膜的光电压特性研究

Photovoltaic Effects in Organic Polycrystalline Tin Phthalocyanine ( SnPc ) Film

铁杂质是硅片制造过程中常见的重金属沾污，表面光电压（SPV）法可很好地用于测定P型硅中铁杂质。

The impurity of iron is one major heavy metal contamination on the silicon wafer . Surface photo voltage method ( SPV ) can be used to accurately measure the iron contamination within the silicon wafer .

通过测量在不同真空度中的室温光电压谱，发现AlGaAs／GaAs多量子阱的光电压对真空度很敏感。

In measuring the photovoltage spectra at room temperature in different vacua , it is found that the photovoltage of AlGaAs / GaAs multiple quantum wells is very sensitive to vacua .

当样品吸附还原性气体时，其光电压明显下降。

The photovoltage decreases evidently when the sample absorbes reducing gas .

运用表面光电压技术对半导体表面光电特性的研究

Study on surface photovoltaic properties of semiconductor by surface photovoltage spectroscopy

用光电压光谱法测定磷砷镓铟室温禁带宽度

Measurement of InGaAsP room-temperature band gap by photovoltaic spectral method

用于高电压技术下的光电压传感器

Optical Voltage Transducer s of High - voltage Techniques

钒氧酞菁薄膜瞬态光电压性能的研究

Synthesis of vanadyl phthalocyanine and Study on structures and photovoltaic properties of its films

双面抛光硅单晶表面光电压的计算

A Calculation of the Surface Photovoltage of P-type Crystal Silicon Wafer Polished both Sides

表面光电压测量中的最佳相位

The Optimal Phase in the Measurement of SPS

发现长烷基链有利于电池开路光电压的提高，但烷基链并非越长越好。

It was found that the longer alkyl chains may improve the open-circuit voltage .

辉光离子氮化氖的光电压效应

Glow lon-nitriding Opto-voltaic effect in neon discharge

实验结果表明，在长波段有强的光电压信号。

The experimental results show that there exists a strong photovoltage signal at long wavelength bands .

氖的光电压效应

Opto-voltaic effect in neon discharge

稳态光电压测量技术

Steady-State Surface Photovoltage Technique

将其与未激活材料的光电压谱曲线进行对比，验证多层结构光电压理论模型，证明表面光电压谱法的实用性。

The multi-layer GaAs structure photovoltage theoretical model was verified . The practicality of surface photovoltage spectroscopy was proved .

讨论了量子阱限制效应、激子的束缚能以及激子峰的形成，分析了量子阱的光电特性及量子阱表面光电压的形成和特点。

In this paper , quantum well effect , exciton binding energy and the formation of excitonic peak are discussed .

本课程将研究太阳能光电压系统的作用，重点在「独立运作」系统。

This class will study the behavior of photovoltaic solar energy systems , focusing on the behavior of " stand-alone " systems .

本文改进了常规表面光电压测试少子扩散长度法，采用环形下电极消除了薄样品背面光电压信号对测量结果的影响；

The authors improved the routine steady-state surface photovoltage method to measure minority carrier diffusion length in both sides polished silicon wafers .

它们的分子式如下：研究了上述7种配合物的红外，紫外-可见光谱，并且重点利用表面光电压光谱技术和场诱导表面光电压光谱技术对7种化合物进行了光电性能测定。

Their formulas are presented as following : We have thorough studied the seven polymer we mentioned before on infrared spectrum , ultraviolet - visible spectrum and put emphasis on the photo-electric properties of these complexes using surface photovoltage spectrum and Field - induced surface photovoltage spectrum .

表面光电压结果表明，聚合物中的官能团能够充当捕获阱捕获光生载流子，有效的抑制了光催化过程中光生电子&空穴对的复合，提高了光催化活性。

The SPS results indicate that the functional group of polymers could act as the capture trap of the photoinduced carriers , and the recombination of the photoinduced electrons and holes was inhibited effectively in the photocatalytic process . It is favor to improve the photocatalytic activity for samples .

载流子表观扩散长度与偏置光强关系的计算机模拟&a-Si∶H表面光生电压（SPV）实验的若干分析

The Computer Simulation for Intensity Dependence of Apparent Diffusion Length & Analysis of Surface Photovoltage ( SPV ) Experiments in a-Si : H