光生电压

载流子表观扩散长度与偏置光强关系的计算机模拟&a-Si∶H表面光生电压（SPV）实验的若干分析

The Computer Simulation for Intensity Dependence of Apparent Diffusion Length & Analysis of Surface Photovoltage ( SPV ) Experiments in a-Si : H

制备了二氧化锡／多孔硅／硅（SnO2／PS／Si）异质结构样品，在不同温度下，分别测量样品吸附氢气、液化石油气前后的光生电压谱。

SnO 2 / PS / Si heterojunction structure samples are fabricated . The photovoltage spectra of the samples during prior-and post-adsorption of H 2 or liquified petroleum at different temperature are measured .

光生电压谱方法对Znse/GaAs异质结导带偏移的研究

Photovoltaic studies on the conduction band discontinuity of ZnSe / GaAs heterojunctions

由表面光生电压实验确定α-Si：H中费米能级附近的隙态密度

The Determination of Density of States at Fermi-level in a-Si : H From Surface Photovoltage method

测量p-i-n电池单色光的光生电流随外电压的变化，可得出空穴的收集长度。

A collection length was obtained by measuring the relation between photocurrent of monochromatic light and applied voltage in a p-i-n solar cell .