暗电导

对刚沉积ZnTe：Cu多晶薄膜的暗电导温度行为，及不同温度退火处理后样品的结构进行了研究。

The dark conductivity vs. temperature behavior for as-deposited ZnTe : Cu films and the structure of ZnTe : Cu films annealed at different temperature are studied .

薄膜材料的暗电导是随着功率的增加是先减小后增大，光敏性表现的与其相反。

The dark conductivity of film material is decreasing with the increase of power first , then decreasing . The performance of the photosensitive is opposite to it .

这种nc-Si／a-Si：H光导膜具有柱状结构，薄膜的光／暗电导比达到10~3，其纵向电导率是横向电导率的2～4倍。

The ratio of light conductivity to dark conductivity of the nv-Si / a-Si : H photoconductor is 103 , and the light conductivity of nc-Si / a-Si : H photoconductor in the normal is 2-4 times more than that in the lateral .

利用薄膜的暗电导和激活能对硅薄膜的电学特性进行了表征。

The electrical properties of the films were characterized by their room temperature electrical conductivity and the activation energy .

实验所得薄膜的光学带隙和暗电导也随衬底温度升高而分别降低和升高。

The optical band gaps of the grown thin films declined and dark electrical conductivity increased with increasing substrate temperature , respectively .

测定薄膜的暗电导与温度间的关系，发现薄膜的电导激话能为各向异性。

The relation between dark conductivity and temperature of Si : H films has been determined . It was found that the conductance activation energy of these films is anisotropic .

纳米硅薄膜材料不仅光敏性好，光暗电导比高，而且跟非晶硅相比，其光电导在长时间光照下的衰减要小得多。

Nano-crystalline silicon material have not only a good photosensitive properties but also a high ratio of photo / dark conductance . Compared with amorphous silicon , the photoconduction of nc-Si : H has a less attenuation under long-time illumination .