二次电子

SEEA理论以绝缘子表面在电子轰击下发射二次电子为基础，包含了电子诱发脱附（ESD），和脱附气体离子化并对闪络过程产生影响等过程，对表面闪络现象进行了解释。

The theory of SEEA is based on the insulator 's surface emitted secondary electrons when bombarded by electron , includes the process of electron-simulated desorption ( ESD ), the process of desorption gas ionization and the process of the ion influencing the flashover .

讨论密封式中子管中抑制二次电子的几种方法。

Methods for suppressing secondary electrons in neutron tubes are discussed .

Cr2O3涂层对Al2O3绝缘瓷二次电子发射特性的影响

Secondary Electron Emission Characteristic of Insulated Al_2O_3 Ceramics with Cr_2O_3 Coating

对于C靶，δ电子对电子阻止本领最大值附近的二次电子发射行为会产生影响。

For C , δ electrons will affect the behaviour of electron emission yield near the maximum electronic stopping power .

为了对气体绝缘变电站站（GIS）二次电子设备进行冲击电压抗扰度试验。

A combination wave generator is developed for impulse immunity test of gas-insulated substation 's secondary equipment .

光子计数技术用于SEM二次电子信号检测的理论探讨

Theoretical discussion on the photon counting technique used for testing SEM secondary electron signal

扫描电子显微学中二次电子产生的MonteCarlo模拟

Monte Carlo Simulation Study on the Generation of Secondary Electrons in Scanning Electron Microscopy

MgO薄膜的制备和二次电子发射性能的表征

Inexpensive Fabrication and Secondary Electron Emission Property of MgO Films

MgO二次电子发射功能薄膜的制备方法

Preparation methods of MgO thin films with secondary electron emission

二次电子电导摄像管（SEC）在空间慢扫描电视系统中的应用

Application of Secondary Electron Conduction Target Vidicon In Slow Deflection TV System

建立一个简单的电路模型，分析二次电子倍增放电与RF腔之间的相互作用。

A simple circuit model is constructed to analyze the interaction between multipactor discharge and RF circuit .

Ta衬底B掺杂金刚石薄膜电极极化特性掺硼金刚石薄膜二次电子发射特性的研究

Electrochemical behavior of boron-doped diamond thin-film electrodes grown on tantalum Study on Secondary Electron Emission Performance of B-doped Diamond Films

同时，就测试过程中的实验现象以及组成对Al2O3陶瓷二次电子发射特性的影响进行了简要分析和讨论。

Effects of the composition on SEE performance of alumina ceramics were briefly analyzed and discussed .

第一性原理研究PDP放电单元MgO保护层各种空缺对二次电子发射系数的影响

First-principles Study on Secondary Electron Emission of MgO Films with Vacancies in Plasma Display Panel Discharge Cells

从最大二次电子发射系数δm和δm对应的能量Em这2个方面，比较了不同二次电子发射特性下表面充电过程及最终平衡电位的异同。

The similarities and differences of charging process of the material with different characteristics of secondary electron emission characteristic is compared .

由极值条件确定MCP通道内壁二次电子发射材料特征常数

Determination of secondary electron emission materials constant on channel wall of MCP using extreme conditions

PSII技术中考虑靶表面二次电子发射的等离子体鞘层演变

Development of the plasma sheath with secondary electron emission in PSII

通过对被加热输油管道外壁腐蚀物的X射线衍射、SEM二次电子形貌观察、波谱及化学分析，研究了其物相组成。

This paper deals with the corrosion of the outer wall of heated petroleum pipeline with the aid of x-ray diffraction , SEM , wave spectrum and chemical composition analysis .

再由UPS的二次电子阈值测定了功函数，从而求得GaAs的电子亲和势。

The electron affinity of GaAs can also be obtained by measuring the work function from the threshold of secondary electron energy distribution in . the UPS spectrum .

二次电子或背散射电子的电流被用来调制阴极射线管（CRT）中电子束的强度。

The secondary backscattered electron current is used to modulate the intensity of an electron beam in a cathode ray tube ( CRT ) .

新型CNT-FED栅极结构表面二次电子发射研究

Secondary Electron Emission from Surface of Novel Gate Structure in CNT-FED

老炼过程对表面放电型ACPDP显示屏内MgO薄膜二次电子发射系数的影响

Influence of Aging Process to the Effective Secondary Electron Emission Coefficient of MgO Film in Surface Discharge ACPDP

利用MonteCarlo方法，模拟场致发射器件中二次电子的产生、运动过程。在模拟的过程中，同时考虑了空间电荷积累效应，二次电子发射和背散射过程。

Using the Monte Carlo method and considering the space charging effect , we simulate the production and the transmission of the secondary electrons in FEDs , and the collision among particles .

给出了简单结构和能量在30&100keV范围内的H1~+，H2~+及H3~+的二次电子发射系数随时间和能量的变化曲线；

The simple structure of the detector and the dependence of secondary electron emission coefficients for H1 + , H2 + and H3 + in the energy range 30 keV to 100 keV on time and energy are given .

然后对微通道板的电子倍增特性进行研究分析，通过研究微通道板电子的倍增过程，分析了MCP二次电子发射系数及MCP增益的特性。

We analysis the secondary electron multiplier for micro-channel plate in the first , and then analyzed and calculated the gain of Micro-channel plate .

在场致发射显示器（FED）中加入支撑会影响真空室内部电场分布和电子运动，从而导致二次电子发射和电荷积累效应。

Spacers located in the vacuum space of a field emission display ( FED ) device will affect the electric field and the electron movement , causing Secondary Electron Emission ( SEE ) and Charging Effects ( CE ) .

结果表明：组成不同的Al2O3陶瓷样品具有明显不同的二次电子发射特性，适当的体掺杂有利于降低Al2O3陶瓷二次电子发射系数和改善表面性能。

Results show that alumina ceramic samples with different compositions possess obvious different SEE properties , and proper bulk doping is helpful to SEE coefficient reduction and surface performance modification of alumina ceramics .

同时，本文也计算了各种不同参量（电压、极间距、气压、二次电子发射系数等）条件下的PDP显示单元的真空紫外光的发光效率，分析了紫外光效随着这些参数变化的原因；

At the same time , this paper also calculated the VUV luminous efficiency beyond different parameters such as voltage 、 distance of the electrode 、 pressure 、 secondary emission etc.

在高于700K温度退火，在二次电子成像中明显发现了体心立方相和二十面体相的转变过程。

Above 700K , we found the transition from body-center cubic phase into icosahedral phase .

SPIC广泛的应用前景也被有关专家称为第二次电子革命。

It was said that the trends of the developing of SPIC would introduce " A second electronic revolution " .