与非门

在这篇论文中，我们在先前提出的基于粘贴DNA计算模型的分子逻辑与门的实现方法的基础上，进一步提出了基于粘贴DNA计算模型的分子逻辑或门和与非门的实现方法。

How to realize molecular logic OR gate , NOT gate and NAND gate based on sticker model of DNA computing and approach to implementation of molecular logic AND gate presented previously , which is proposed in this paper .

三值与非门及四态门开关电路的研究

The Door Study on the Circuit of 3 Value NAND Gate and Four State Gate

TTL与非门电压传输特性实验的改进

To Ameliorate Scanning Admeasuring Voltage Transmission Characteristic of TTL NAND Gate

基于RTD的与非门和或非门设计

Design of Nand and Nor logic gates based on RTD

两种间接测量TTL与非门参量的方法

Two methods of indirectly determining parameter of TTL NAND gate

对TTL与非门输入负载电阻特性的讨论

Discussion on the Input Load Resistance Characteristic of the TTL Nand Gate

利用示波器测定TTL与非门的主要参数

Using Oscilloscope to Measure the Main Parameters of TTL and Not Gate

导通于放大状态的高速低压TTL与非门

High-speed and low-voltage TTL AND-NOT gate to turn on amplification-state

BFL与非门或非门单元组成的高性能GaAs分频器的设计

Design of High Performance Frequency Divider Using GaAs BFL-NAND and BFL-NOR Gates

用双踪示波器测试TTL与非门电压传输特性

Test the Voltage Transfer Characteristics of TTL NAND Gate by Double-t rail Oscillograph

通过对电路的理论分析和实验测试，并与传统的CMOS与非门比较，认为该两种ULG。

Through theoretical analysis , experiments and comparison with traditional CMOS gates , it is considered that either of the two practical circuits for ULG .

对TTL与非门电压传输特性测试实验的研究

A research on the experiment of testing the transferring characteristics of TTL and not-gate power

TTL六值与非门与七态门电路的研究

Discussion about the Circuit of TTL Six - value ' And-Not ' Gate and Seven State Gate

在TTL与非门电路中，输出级改用集电极开路的一种反相器。

In TTL NAND circuit , a phase inverter with its output circuit changed to an open collector .

论文设计了基于RT量子器件的二值与非门与或非门，设计的门电路结构简单，并具有量子器件所具有的速度快、功耗低、集成度高等优点。

The designed gates have simple configuration , they also have the advantages that quantum devices possess , so they can suit the requirement of VLSI .

采用双极型晶体管设计的三值TTL与非门及四态门均属于开关电路。

Value TTL NAND gate and four state gate by using two very type transistor designs are switched circuits .

利用门冻结技术的基本原理，提出了基于F门的逻辑单元电路设计：F-与非门和F-或非门，并将其应用到一种新的RS触发器中。

According to the idea of gate freezing , the designs of the logic cells : F-Nand-gate and F-Nor-gate are presented , and then a new kind of RS flip-flop based on F-Gates is proposed .

本文通过对TTL与非门电压传输特性的研究，介绍通过三种不同的实验方法，可以取得不同的实验效果。

Three different experimental methods are introduced by studying the transferring characteristics of TTL and not-gate power . Different experimental results may be obtained .

本文介绍集成运算放大器及TTL与非门综合参数测试仪的原理及其理论分析，并附有该仪器的实际测试结果。

The principle and theoretical analysis of integrated operational amplifiers , TTL and-inverters integrated-parameters tester was introduced , and also presents the practical results tested by the tester .

在以CMOS为开关器件的数字集成电路芯片的设计中，由于或非门优于与非门，故应该使用所介绍的方法，直接采用或非门设计组合逻辑电路芯片。

Because the NOR gate is superior than the NAND gate . the method introduced in this paper should be adopted and the NOR gate ought to be directly used when designing digital integrated circuit with CMOS as switches .

基于该方案设计了三值反相器、文字运算电路、三值与门/与非门和或/或非门等基本电路，并采用标准CMOS工艺来实现这些电路。

On the basis of the proposed scheme , the ternary inverter , literal , ternary AND / NAND and OR / NOR gates with less complex structure were designed , and the standard CMOS process was adopted without any modification of the thresholds .

本文是在数值分析基础上，用节点相位差的线性近似对JAWS门的非线性状态方程进行线性化，由此获得了门电压态特性的解析描述。对TTL与非门电压传输特性测试实验的研究

Based on numerical simulation , the nonlinear state equation of JAWS is linearized through linear approximation of phase differences at nodes . A RESEARCH ON THE EXPERIMENT OF TESTING THE TRANSFERRING CHARACTERISTICS OF TTL AND NOT-GATE POWER

本文对最基本的HCMOS器件（反相器和与非门）作了γ辐射损伤实验。

This paper has studied experimentally the y radiation damage to the most fundamental HCMOS devices ( inverters and N-AND gates ) .

四值非门和与非门电路的研究

Study on About the Circuit of 4 Values NOT Gate and NAND Gate

在与传统的与非门/或非门的比较中，它显示了优势。

Compared with conventional NAND and NOR gates , one - bit full adders have several advantages .

其中包括倒相器与非门、或非门、变形反相器和T门共五种基本电路。

It consists of five types of fundamental circuits including inverter , NAND gate , NOR gate , ternary inverter and T-gate .

大致相同的程序让或非门表现为一个与非门，我们必须颠倒所有输和输出，使一个与非门的作为或非门。

Much the same as the procedure for making a NOR gate behave as a NAND , we must invert all inputs and the output to make a NAND gate function as a NOR .

第二部分是产生方波，由正弦波到方波可以通过与非门再经过非门反向得到，第三部分是产生三角波。

The second part is to produce a square wave , in this part the sine wave change into square wave through a NAND gate and then a INV gate . The third part is a triangle wave .