量子阱激光器

用无致冷量子阱激光器管芯组件拍摄全息图

Taking holograms using uncooled MQW laser module

用此材料制备的掩埋异质结（BH）条形结构多量子阱激光器具有极低阈值电流4～6mA。

The threshold currents of buried heterostructure ( BH ) MQW lasers with this strained layers structure were 4 ￣ 6 mA mostly .

GaN基量子阱激光器交叉饱和特性的计算与分析

Calculation and Analyses of Cross-Saturation Characteristics of GaN Quantum Well Lasers

GaN基量子阱激光器极化相关增益饱和特性的理论计算

Theoretical Calculation of Polarization Dependent Gain Saturation in GaN Quantum Well Lasers

InGaAs（P）应变多量子阱激光器的理论分析与优化设计

Theoretical Analysis and Optimum Design for InGaAs ( P ) Strained Multiple - Quantum - Well Lasers

MBE生长高质量GaAs／AlGaAs量子阱激光器

MBE Growth of High Quality GaAs / AlGaAs Quantum Well Lasers

2.5GDFB量子阱激光器p型欧姆接触电极的研究

P - type low resistance ohmic contact for 2.5G DFB quantum well lasers

InGaAs／GaAs应变层量子阱激光器深中心行为

Behaviour of Deep Centers in InGaAs / GaAs Strained Layer Quantum Well Lasers

低阈值基横模脊形波导GaAs／AlGaAs单量子阱激光器

Low Threshold Single Transverse Mode Ridge Waveguide GaAs / AlGaAs Quantum Well Lasers

MOCVD生长量子阱激光器材料及结构的优化设计

Optimum Structural Design for QW Laser Material and Grown by MOCVD

基于三层模型的多量子阱激光器调制特性的SPICE模拟

Modulation Properties of Multi Quantum Wells Laser Analyzed by A Three-level Model in SPICE

具有线性GRIN结构GaAs/AlGaAs单量子阱激光器

GaAs / AlGaAs Single Quantum Well Laser with Two Pairs of Linear GRIN

量子阱激光器的Pspice电路温度模型

Pspice Circuit Temperature Model of the Quantum Well Laser

52μmInGaAsp／InP分别限制量子阱激光器

1.52 μ m InGaAsP / InP Separated confinement Quantum Well Laser Diodes

高温连续输出AlGaAs大功率单量子阱激光器的工作特性

High-Power , High-Temperature Operation of AlGaAs Single Quantum Well Lasers

SCH量子阱激光器的混沌同步通信研究

Study on the chaotic synchronization communication of different structure SCH quantum well lasers

SCH量子阱激光器的光学限制特性

Optical Confinement Characteristics of SCH Quantum Well Lasers

MBE生长温度对InGaAs/GaAs应变单量子阱激光器性能的影响

Effect of Growth Temperature on The Performance of InGaAs / GaAs Strain Single Quantum Well Laser by MBE

用LPE研制的室温连续工作的1.48μm单量子阱激光器

Room Temperature CW Single Quantum Well Laser at 1.48 μ mFabricated by Liquid Phase Epitaxy

采用MOCVD方法成功地研制了具有线性GRIN结构GaAs／AlGaAs单量子阱激光器。

High output power GaAs / AlGaAs single quantum well lasers with two pairs of GRIN have been fabricated by MOCVD method .

MOCVD生长带有MQB的量子阱激光器材料

MOCVD Grown Quantum Well Laser Materials with MQB

以近年来研究较热的GaN多量子阱激光器为例对其进行了动态特性的数值模拟。

At the same time , time-domain analysis is made by the direct numerical simulation to study the transient response characteristic of the GaN based Muti-quantum well lasers .

气相淀积（MOCVD）技术生长了分别限制应变单量子阱激光器材料。

Separate confinement heterostructure strained single quantum well materials were grown by the technology of metal organic chemical vapor deposition ( MOCVD ) .

用数值求解法求解速率方程，对比了小功率的一般DH激光器和量子阱激光器的大信号瞬态特性。

Numerical method is used to resolve rate equation . Then the general low-power DH lasers with quantum-well lasers of large-signal transient are compared .

GaSb基锑化物量子阱激光器材料的研究

GaSb Based Quantum Well Laser Materials

采用MOCVD技术在φ40mmGaAs衬底上研制成大功率GaAs/GaAlAs单量子阱激光器。

High power GaAs / GaAlAs single quantum well ( SQW ) LD have been fabricated on φ 40mm GaAs substrate grown by MOCVD .

给出一个新的量子阱激光器等效电路模型，由量子阱激光器单模速率方程推导得到并在电路模拟程序SPICE中完成。

A simple equivalent circuit model of quantum well laser ( QW LD ) which is derived by QW rate equations and is accomplished in the circuit simulation program SPICE .

Gao模型和GRossi模型，在此基础上，利用PSpice这个电路仿真软件，对量子阱激光器的多种特性进行了模拟。

On the base of that , we use the PSpice simulation software to imitate the various characteristic of the QW & LD .

从理论上分析了应变补偿多量子阱激光器的阈值特性，并以InGaAs（P）体系为例，分别对应变补偿结构和普通应变多量子阱激光器进行了数值计算。

The threshold characteristics of strain compensated multi quantum well lasers are analyzed theoretically . Taking the InGaAs ( P ) system as an example , the strain compensated and common strain multi quantum well lasers have been studied .

低阈值InGaAs-GaAs应变层多量子阱激光器

Low Threshold Current InGaAs-GaAs Strained Layer Quantum Well Laser