量子效率

提高发光二极管（LED）外量子效率的途径

Enhancement of the External Quantum Efficiency of Light-emitting-diodes

X射线光阴极量子效率的研究

Research on quantum efficiency of X-ray photocathode

通过减薄CCD采用背面照射，能大幅度提高其量子效率。

The thinning and back-illuminating make CCD improve significantly its quantum efficiency .

C4植物PSⅡ最大量子效率显著低于C3植物。

The PS II photochemical efficiency of C_4 plants was obviously lower than that of C_3 plants .

首先获得了有机紫外电致发光器件，①实现了高外量子效率的有机UV电致发光。

We obtained UV organic light emitting devices that having high external quantum efficiency .

因此探索提高LED芯片内量子效率和取光效率的方法得到了广大学者的关注。

Consequently , more and more researchers are exploring to improve internal quantum efficiency and light extraction efficiency of LED chip .

指数掺杂GaAs光电阴极量子效率的理论计算

Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes

电子倍增CCD是超低读出噪声和高量子效率的新型器件。

Electron multiplying CCD is the novel imager that has ultra-low readout noise and high quantum efficiency .

特别地，对荧光粉转换型LED，需要进一步地提高器件的发光效率，即组件的外部量子效率。

The device luminous efficiency of phosphor converted LEDs , namely the external quantum efficiency of devices needs to be improved further .

利用梯度掺杂获得高量子效率的GaAs光电阴极

High Quantum Efficiency GaAs Photocathode by Gradient Doping

立方相Y2O3：Eu纳米晶中C2格位Eu~（3+）的~5D0能级量子效率

Quantum Efficiency of the ~ 5D_ 0 Level of Eu ~ ( 3 + ) at C_2 Site in Cubic Nanocrystalline Y_2O_3

具有高量子效率、低暗电流、高可靠性的平面InGaAsPIN光电二极管

Planar InGaAs PIN Photodiode with High Quantum Efficiency Low Dark Current and High Reliability

但是传统LED的输出光功率仍然很低，提高LED的量子效率成为最为关键的问题。

However , the output optical power of tradition LEDs is still very low . So it is a crucial problem to improve the quantum efficiency .

Hg（0.8）Cd（0.2）Te光电二极管的外差量子效率的研究

Distribution function of heterodyne quantum efficiency of Hg_ ( 0.8 ) Cd_ ( 0.2 ) Te photo-electrical diode

提高TiO2浓度也会增大平均量子效率，直到TiO2浓度趋于饱和，平均量子效率将不会上升。

High TiO2 concentration makes high average quantum yield , and it will become saturated for high TiO2 concentration .

目前LED技术的一大技术难题是，芯片在大电流注入或升温过程中会有出现内量子效率的急剧下降。

One of the major technical problems is that the internal quantum efficiency will drop sharply when the chip is under large current injection or high temperature .

进一步提高CdTe的量子效率。

The first focus was to improve fluorescence intensity of CdTe QDs .

就目前研究较多的TiO2系光催化剂而言，其较宽的禁带宽度和较低的量子效率仍然是限制其发展的主要原因。

As far as the general TiO2 photocatalyst , the broad band gap and low quantum efficiency confine its development .

GaAs／GaAlAs透射阴极量子效率相关参量分析

Analyses on Parameters Related with Quantum Efficiencies of GaAs / GaAlAs Transmission Mode Photocathodes

氮素水平对荧光动力学参数的调控存在一定差异，低氮水平条件下荧光光化学猝灭系数和PSⅡ量子效率最大；

Fluorescence photochemical quenching coefficient and quantum efficiency of PS ⅱ at low nitrogen level ( B_2 ) was the highest .

GaAs／GaAlAs光电阴极量子效率相关参数测量方法的研究

Research on measurement methods for some parameters related to gaas / gaalas photocathode quantum efficiency

细胞间隙CO2浓度（Ci）的变化趋势与Ls相反；光合碳同化的量子效率（Φc）明显下降。

The intercellular CO_2 concentrations and the stomatal limitation values presented opposite tendencies and the apparent quantum yields in photosynthetic carbon assimilation remarkably declined .

研究了指数掺杂GaAs光电阴极量子效率的等效求解方法，简化了求解过程。

An equivalent methode of solving quantum efficiency of exponential doping GaAs photocathode was presented , which simplify the solving process .

硼酸盐激光晶体中激活离子的发光量子效率与BO3基团的内振动

Luminescence Quantum Efficiency of Active Ions and the Internal Vibration of BO_3 Groups in Laser Borate Crystals

镓（Ga）的含量及分布对CIGS薄膜电池量子效率的影响

Effects of Proportion and Distribution of Gallium on Quantum Efficiency of CIGS Thin Film Solar Cell

在低光强下，C3植物和C4植物的光合速率和光量子效率差异并不显著，当光强继续升高C4植物的优势就表现出来了。

Under low light intensity , there is no difference of photosynthetic rate and efficiency of photons between C_3 and C_4 plants . When we increased the light intensity C_4 plants exhibited its superiority .

在叶片衰老过程中，对照和处理叶片PSⅡ的最大量子效率没有显著差异。

Little difference was observed in the maximal PSII quantum efficiency of UV-B treated and control leaves during the process of leaf senescence .

作为太阳电池光阳极的半导体材料TiO2由于带隙宽、量子效率低而限制了其实际应用。

The semiconductor TiO2 was restricted in the application as solar cell materials because of its wide band gap and low quantum efficiency .

正面入射In（0.53）Ga（0.47）As/InP光电PIN管量子效率研究

A Study on the Quantum Efficiency of the In_ ( 0.53 ) Ga_ ( 0.47 ) As / lnP PIN Photodiode From Front Side Incidence

InSb（PV）红外探测器分谱量子效率η（λ）的温度关系研究

An investigation on the temperature dependence of spectral quantum efficiency η(λ) of insb ( pv ) infrared detectors