应变层

Ge、Si的形变势及其应变层异质结的带阶

Deformation Potentials and Band Offset of Ge , Si Strained layer Heterojunction

Si（1-x）Gex/Si应变层超晶格生长研究

Growth of si_ ( 1-x ) ge_x / si strained layer superlattice

Ⅱ－Ⅵ族应变层超晶格的X射线衍射分析

X-ray diffraction analysis on ⅱ - ⅵ compound strained-layer superlattice

Si／Ge应变层异质结价带偏移的剪裁与设计

The Tailoring of Valence-Band Offsets at Strained Si / Ge Interfaces

p型Si（1-x）Gex应变层中重掺杂禁带窄变的计算

Calculation of the bandgap narrowing due to heavy doping in p-type strained si_ ( 1-x ) ge_x layers

InGaAs／GaAs应变层量子阱激光器深中心行为

Behaviour of Deep Centers in InGaAs / GaAs Strained Layer Quantum Well Lasers

GexSi（1-x）/Si应变层超晶格的折迭纵声学声子

FLA Phonons in Ge_xSi_ ( 1-x ) / Si Strained-Layer Superlattices

Ge＿xSi＿（1－x）／Si应变层超晶格的横截面电镜样品中的弹性驰豫

Elastic Relaxation in Cross-sectional Transmission Electron Microscopy Specimens of Ge_xSi_ ( 1-x ) / Si Strained-layer Superlattices

Ga（1-x）InxSb/GaSb应变层超晶格的MOVPE生长

Ga_ ( 1-x ) In_xSb / GaSb Strained Layer Superlattice Grown by MOVPE

不同生长温度下Ge（0.5）Si（0.5）／Si应变层超晶格材料结构的X射线双晶衍射研究

Structure Analysis of Ge_ ( 0.5 ) Si_ ( 0.5 ) / Si Strained-Layer Superlattices Grown at Different Temperatures by X-ray Double-Crystal Diffraction

描述了SiGe应变层特性。

The characteristics of SiGe strain layers are described .

利用GaAs基上InGaAs应变层制备有序排列的InAs量子点

Ordering Growth of InAs Quantum Dots with Ultra-Thin InGaAs Strained Layer on GaAs Substrates

GexSi（1-x）/Si应变层和超晶格及其临界厚度

Ge_xSi_ ( 1-x ) / Si Strained Layer Superlattices and Their Critical Layer Thickness

GexSi（1-x）/Si应变层超晶格的结构特性与器件应用

Structure Features and Device Applications of Ge_xSi_ ( 1-x ) / Si Strained Layer Superlattice

应变层超晶格（CdTe）n／（ZnTe）m的带偏移与亚带结构

Band Offsets and Subband Structures of ( CdTe ) _n / ( ZnTe ) _m Strain Layer Superlattice

用GaAs张应变层控制InP衬底上InAs三维岛的有序排列

Ordering InAs Islands Grown on ( 001 ) InP Substrate Controlled by Using Tensile Strained GaAs Layer

以分子束外延技术在SIMOX衬底上生长Si／Ge（0.5）Si（0.5）应变层超晶格。

Si / Ge_ ( 0.5 ) Si_ ( 0.5 ) Strained-layer superlattices are grown by molecular beam epitaxy on SIMOX substrates .

采用应变层量子阱的毫米波低噪声HEMT的进展

The Progress of The Millimeter-Wave Low-Noise HEMT 's Using Strained Layer Quantum Wells

角反射器耦合的InGaAs应变层量子阱锁相列阵激光器的模式特性

Mode Characteristics of a Comer Reflector Coupled InGaAs Strained Layer Quantum Well Laser Phased Array

GexSi（1-x）/Si应变层超晶格X-射线双晶衍射的运动学研究

Double Crystal X-ray diffraction study of Ge_xSi_ ( 1-x ) / Si Strained-Layer Superlattices by Kinematical approach

Si/Si（1-x）Gex应变层异质结双极晶体管（HBT）交直流特性的仿真研究

Study of Si / Si 1 - x Ge x Stained Layer Heterojunction Bipolar Transistors ( HBT ) by Simulating AC / DC Characteristics

常压MOCVD法生长ZnSe/ZnSxSe（1-x）应变层超晶格

Growth of ZnSe / ZnS_xSe_ ( 1-x ) Strained-Layer Superlattices by Atmospheric Pressure MOCVD

采用电容耦合法测量了GexSi（1-x）/Si应变层超晶格在不同温度下的光伏特性。

The photovoltaic characteristics of Ge_xSi_ ( 1-x ) / Si strained-layer superlattices atdifferent temperatures have been measured by the capacitor coupling method .

在GexSi1-x/Si应变层超晶格中，观测到子带和连续带间的光跃迁。

Ln Ge_xSi_ ( 1-x ) / Si strained layer superlattice , the optical transitions between subbands and continuous bands are observed .

采用VarianGenⅡMBE生长系统研究了InGaAs／GaAs应变层单量子阶（SSQW）激光器结构材料。

InGaAs / GaAs strained single quantum well ( SSQW ) laser structure materials were studied by using Varian Gen ⅱ MBE system .

低阈值InGaAs-GaAs应变层多量子阱激光器

Low Threshold Current InGaAs-GaAs Strained Layer Quantum Well Laser

采用反应离子刻蚀技术，设计、制备了一种角反射器耦合的10单元InGaAs应变层单量子阱镇相列阵激光器。

A ten-element InGaAs strained-layer single quantum well laser phased array coupled with corner reflectors ( CRLA ) was designed and fabricated by using reactive ion etching ( RIE ) .

，给出了In（0.25）Ga（0.75）As-GaAs应变层量子阱的Γ谷压力系数，实验观察到了量子阱中能级与势垒GaAs中X谷的能级交叉。

The pressure coefficients of T valley of ( InGa ) As-GaAs strained quantum wells are presented . We have observed the crossover between the energy level in the well and X valley in the barrier GaAs .

InGaAs/GaAs应变层短周期超晶格的Wannier-Stark效应

Wannier-Stark Effects in InGaAs / GaAs Short-Period Strained Superlattices

用L-K有效质量理论研究〔001〕方向生长的（Znse）n／（ZnS）m应变层超晶格的电子结构和光吸收系数.结果表明，光吸收系数与附宽和垒厚有关。

The subband structures and optical absorption coefficient of ( ZnSe ) _n / ( ZnS ) _m strained-lay superlattices in [ 001 ] were calculated with the effective-mass approximation . The results indicate that the optical obsorption coefficient varies with the well-width and the barrier-width .