能带工程

纳米技术与能带工程对Si基高效发光的促进

Nano-technology and energy band engineering to promote the high efficient luminescence of silicon

SiGe技术将能带工程和应变工程引入了Si器件和集成电路。

The major advantage of SiGe technology is that energy band engineering and strain engineering have been introduced into Si device and IC .

而ZnO的带隙调制的能带工程是实现这些器件的重要方法。

And the most important method of realizing these devices is to modulate the band gap of ZnO .

SiGe材料具有很多独特的性质，高性能的应变SiGe外延层能够将能带工程的概念引入到传统的S基材料中去。

SiGe material has many unique characteristics . The high performance strained epitaxial layer can introduce the concept of bandgap engineering into the conventional silicon based materials .

能带工程在激光器中的应用

Applications of Energy Band Engineering to Semiconductor Lasers

制造半导体器件的能带工程

The energy band engineering of making semiconductor devices

本文主要论述了能带工程在半导体激光器中的应用。

The applications of energy band engineering to semiconductor lasers is mainly described in the paper .

在提高聚合物发光二极管的各项性能的进程中，电注入发光聚合物的能带工程将起着积极的作用。

During the improvement of their performance , the energy band engineering of electroluminescent polymers will take positive effect .

这种差异表明，在器件的材料结构设计上已从掺杂设计步入到了能带工程设计。

It is shown that doping design for the device ′ s material structure has evolved into band engineering design .

本文简要介绍从杂质工程到能带工程的发展过程，以及能带工程的三种基本方法。

This article briefly introduces the development from impurity engineering to energy band engineering and three methods of energy band engineering .

最后比较了这两种材料能带工程中的物理效应和化学效应，提出了综合此两效应优化设计新发光材料的新方法。

Finally the physical and chemical effects in these two materials are compared , and a combined design method for new superlattices is proposed .

近年来这些成果被应用于半导体器件和电路的研制，形成一门新的能带工程。

The accomplishments have been applied to developing of semiconductor devices and circuits in recent years , and new energy band engineering has formed .

共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。

The resonant tunneling diode ( RTD ) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance .

低阈值半导体激光器的能带结构工程

Band-Structure Engineering for Low Threshold Semiconductor Lasers

聚合物能带隙工程作为半导体聚合物研究的新兴领域，对于半导体聚合物材料的应用以及半导体聚合物器件的各项性能的提高起着非常重要的作用。

Polymer band gap engineering is a new field on semiconducting polymers research . It is important for applications of semiconducting polymers and improvement of properties of their devices .

碳的加入为Si－Ge系统在能带和应变工程上提供了更大的灵活性。

The incorporation of carbon into Si-Ge system provides an additional degree of freedom for band gap and strain engineering .

随着MBE和MOCVD生长技术的发展，已能生长出高质量超薄层的外延材料，使能带工程技术成为目前国内外的热门研究课题。

With the development of MBE and MOCVD growth techniques , high quality super-thin epitaxial material can be grown . So energy band engineering associated with super-thin epitaxial layer has become an important subject .