选择外延

双硅源选择外延及侧向过外延的生长特性

The Growth Characteristic of Double Silicon Source Selective Epitaxy and Epitaxial Lateral Overgrowth

研究了采用选择外延MOVPE生长InGaAsP的组分随掩模宽度的变化规律，以及InGaAsP表面边缘尖角随Ⅴ/Ⅲ比的变化。

The variation of composition of group ⅲ with mask width is investigated , as well as the variation of the surface spike of selectively grown InGaAsP by using LP MOVPE with ⅴ / ⅲ ratio .

这种材料将在选择外延中起重要作用；

This material will play an important roll in the preferential epitaxy .

化学束外延、原子层外延、迁移增强外延、选择区域外延、激光辅助外延和低温Si外延等是在分子束外延和金属有机化学气相沉积基础上发展起来的几种新型超薄层外延技术。

Chemical beam epitaxy , atomic layer epitaxy , migration enhanced epitaxy , selective area epitaxy , laser-assisted epitaxy and low temperature Si epitaxy are new ultrathin epitaxial techniques developed based on molecular beam epitaxy and metallorganic chemical vapor deposition .