大功率晶体管

  • 网络High-power transistor;GTR;IGBT
大功率晶体管大功率晶体管
  1. 分析了实现大功率晶体管(GTR)快速保护的途径,提出了一种GTR的快速保护电路,尤其对检测电路作了详细的讨论。

    This paper analyses the ways to realize rapid protection of GTR and presents a practical rapid protection circuit . The detector circuit is discussed in detail .

  2. 一种大功率晶体管的快速保护方法及其响应时间研究

    A rapid protection method of GTR and study in its response time

  3. 基于ANSYS的大功率晶体管散热器的研究

    The radiator research of power amplifier tube based on ANSYS

  4. 本文介绍PAM、PWM复合控制原理和按此原理研制的大功率晶体管宽调速交流调速系统。

    The principle of PAM PWM compound control and the power transistor AC adjustable speed system based on that principle are presented in this paper .

  5. 提出一种基于DC/DC变换器IC大功率晶体管模块的基极驱动电路,减小了驱动损耗,简化了驱动电路与工艺。

    A base drive circuit based on IC high power transistor module of DC / DC converter is presented , which reduces drive consumption , also simplifies drive circuit and the technics .

  6. 本文介绍了磁通轨迹控制法,并基于此方法组成了一个用16位微型机控制的PWM变频调速系统,逆变器用大功率晶体管组成。

    The airgap flux trace control method is described in this paper and a power transistorized PWM variable frequence induction motor drive system with a 16-bit microcomputer is built based on this method .

  7. 本文总结、分析了几种大功率晶体管(GTR)的过载保护方案。

    The plans for overload protection of several giant transistors ( GTR ) are summarized and analyzed in this paper .

  8. 本文讨论了大功率晶体管在开关过程中的卸载问题,给出了RCD卸载电路及一种新颖的无损耗卸载电路,分析了卸载电路的工作过程。

    This paper describes the unload circuits which are used in power transistor ( SOA ) . RCD unload circuit and a novel unload circuit without energy losses are presented , their effects are discussed .

  9. 本文介绍一种采用TR&801单板机,配合大功率晶体管(GTR)构成的斩波器,对直流电动机实现斩波控制的直流调速系统,给出了系统的硬件电路图和软件流程图,并给出了实验结果。

    A speed control system using a single-board microcomputer TP-801 for direct motor with a GTR ( Giant TRansistor ) chopper is presented . The hardware circuit and software flow-chart as well as experiment result are given in the paper .

  10. 提高S波段大功率晶体管内匹配电容的可靠性

    Improving the reliability of internal matching capacitor in S-band high power transistor

  11. 低频大功率晶体管芯片的电子束退火研究

    Study of Electric Ray Annealing on High Power Transistor Chip

  12. 大功率晶体管驱动不受高频影响。

    High-power transistor drive is not affected by high frequencies .

  13. 本文还研究了低频大功率晶体管的“云雾击穿”。

    Investigations have been made on the cloud-mist breakdown of high power transistors .

  14. 窄脉宽工作下的大功率晶体管及其驱动的研究

    GTR and Its Drive in Narrow width Pulse Modulation

  15. 大功率晶体管的保护及应用

    Principles of high power transistor protection and their application

  16. 一种新型大功率晶体管驱动电路的研究

    Study on A New Kind of GTR Driving Circuit

  17. 大功率晶体管脉宽调制直流调速系统

    PWM DC Driving Systems with High Power Transistors

  18. 微波大功率晶体管基极镇流方法研究

    Microwave High-Power Transistor Base Ballast Method Research

  19. 大功率晶体管卸载电路的设计

    Design of Unload Circuits for Power Transistor

  20. 稳态热阻对大功率晶体管寿命试验的影响

    Influence on the Life Test of the Discrete Semiconductor Devices from Steady State Thermal Resistance

  21. 大功率晶体管正弦电流型交流变频宽调速驱动系统

    A Power Transistor Based Speed Control System

  22. 硅大功率晶体管的微等离子击穿

    Microplasma Breakdown In High Power Transistors

  23. 大功率晶体管并联研究

    Research for Power Transistor Parallel Connection

  24. 金属键合线互连是射频大功率晶体管内匹配技术中的关键手段。

    Metal wire bonding interconnection is the key means in the internal matching technology of RF power transistor .

  25. 对当前高频大功率晶体管制造技术的最新科技成果和未来发展方向进行了研究。

    Made a research in the new technical fruit and future prospect of currently technology of high-frequency power transistor .

  26. 介绍了因单个高频大功率晶体管输出能力有限而采用多管并联运用(积木式)的方法。

    Introduced the method of multi-transistor modular design , for the output ability are limited in single high-frequency power transistor .

  27. 介绍了对某型号高频大功率晶体管进行的失效分析。

    Abstract : In this paper , the failure analysis of a type of high frequency power transistor is introduced .

  28. 本文利用集电极电流波形方程及图表来计算大功率晶体管调谐功率放大器的主要技术指标。

    Abstract : The main parameters of large tuned-transistor power amplifiers arc calculated by using the collector-current waveform equation , graphs , and tables .

  29. 大功率晶体管在调速系统中作为开关元件使用时,其优点是开关频率比可控硅的高,但是不注意保护就容易损坏。

    When the high-power transistor serves as switching element in the speed control system , its switching frequency is higher than that of the controllable silicon .

  30. 针对目前功率设备中的大功率晶体管散热器分析和设计方法的局限性,提出了一种基于有限元仿真的散热器研究方法。

    Due to the limitation of the present method analyzing and designing radiators of power amplification tube , a method researching radiators based on finite element analysis was introduced .