双极型功率晶体管

介绍了一种应用于双极型功率晶体管（GTR）的比例驱动电路。

A proportional drive circuit for bipolar power transistor ( GTR ) is introduced , which has excellent drive performance of being able to reduce the switch losses and the storing time of the power switch .

此外，由于IGBT兼具有双极型功率晶体管BJT和功率MOSFET的优点，使其在越来越多的领域得到运用。

In addition , IGBT has the both advantages of BJT and power MOSFET , making it applied in more and more areas .

双极型功率晶体管的温度分布和直流安全工作区

Temperature Distribution and Safe Operating Area for Bipolar Transistors

粘接层质量是双极型功率晶体管可靠性的主要影响因子，而粘接空洞又是粘接层的主要失效模式。

The quality of connection layer is a critical factor to reliability of power transistor and voids are mainly failure mode to it .

双极型微波功率晶体管热失效原因分析

Failure Causes Analysis due to Heat Stress of Bipolar Microwave Power Transistor

设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。

A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed .

异质结双极型晶体管SIPOS钝化功率晶体管双线击穿现象的研究

Study of Double-line Breakdown Phenomenon for Power Transistor with SIPOS Passivation Layer