负载电容

  • 网络Load Capacitance;Loading capacitance;loading capacitor
负载电容负载电容
  1. 同时模拟分析了负载电容、电感等参数对输出的影响。

    The influences of the load capacitance and inductance on the output are also analyzed .

  2. 运用了传统的存储体分块、字线分割技术以减少负载电容,降低功耗。

    The memory is partitioned into several banks and the word lines are divided to reduce the load capacitance and then reduce theirs power .

  3. 影响CMOS电路热载流子效应的因素有:晶体管的几何尺寸、开关频率、负载电容、输入速率以及晶体管在电路中的位置。

    Factors leading to hot-carrier effects in CMOS IC 's include transistor size , switching frequency , load capacitance , input rate and the location of transistors in the IC .

  4. 存储阵列分块技术以及分段译码技术降低了SRAM位线和字线的负载电容,从而提高了SRAM的速度。

    Sub-array and subsection decoding reduce the load capacitance of bit line and word line and enhance the speed of SRAM simultaneously .

  5. 在学习范围内,任意的给定负载电容Cz和反馈电阻Rf,在神经网络的输出端立即得到增益曲线,从而达到节省设计时间的目的。

    For any given load capacitor C_z and feedback resistance R_f , the gain curve at the output port of ANN is obtained to save time in the scope of the study .

  6. 单位增益缓冲器是具有驱动大负载电容能力的运算放大器的反馈应用,该运算放大器的增益大于70db,相位裕度大于70度。

    Output buffer is realized by the feedback application of amplifier which can drive big load capacitor .

  7. 详细分析了模块视图产生的方法、插值算法、Synopsys模型中查找表的跳变时间与负载电容索引点的合理取值、以及全定制模块特征值的类型及提取原理。

    Method for view-generation and algorithm for interpolation are analyzed . And ways to determine proper index values of transition time and pin capacitance used in the lookup table of Synopsys model are also explained , along with the characterization types and its extraction theory .

  8. GB/T16526-1996封装引线间电容和引线负载电容测试方法

    The method of measuring the lead-to-lead and loading capacitance of package leads

  9. 结果表明:随着负载电容的减小其效率将增大;

    The results show that the decrease of load capacitance would result in increasing the efficiency .

  10. 结合具体单子结构尺寸,计算了探针插入深度和负载电容与谐振频率的关系。

    The capacitance and the frequency of the substructure are calculated when the probe inserts in different depths .

  11. 硬件低功耗设计有两个层次:器件级的低层次设计主要关注减少负载电容和漏电流;

    Low power design of the hardware is divided into two levels : device level and system level .

  12. 本文分析了负载电容的具体影响,并提出了一些改善措施。

    The action of the capacitive lood has been analysed and some improvements have been put forward in this paper .

  13. 此外还计算出了恒流特性发生变化的时刻以及该时刻对应的负载电容电压。

    Furthermore , the precise time when the constant-current characteristic changes and the voltage on the load capacitor at that moment are calculated .

  14. 这两个电容叫晶振的负载电容,分别接在晶振的两个脚上和对地的电容,一般在几十皮发。

    The two capacitors called crystal load capacitance , respectively , connected to two feet and the crystal-to-ground capacitance , generally issued dozens of leather .

  15. 大的负载电容和日益严重的线间耦合使得深亚微米总线面临着功耗、延迟和可靠性等问题。

    Due to the large load capacitance and increasingly serious inter-wire coupling , deep submicron buses are facing many problems like power , delay and reliability .

  16. 数值计算结果表明等效分布电容法对均匀分布的多个小负载电容脉冲传输线具有很好的补偿作用。

    The results of numerical computation show that pulse transmission line of multi-small-loading capacitance with proportional spacing can be well compensated by the equivalent distributed capacitance method .

  17. 它会影响到晶振的谐振频率和输出幅度,一般订购晶振时候供货方会问你负载电容是多少。

    It will affect the crystals resonant frequency and output amplitude , the general ordered crystal when the supplier will ask you how much the load capacitance .

  18. 跨导型运算放大器是模拟和混合信号电子系统的基本组成模块,本文将要设计的是一种用于误差放大的低压低功耗多级放大器,要求具有高增益、大带宽并且能驱动大的负载电容。

    In this paper , we will design a high gain 、 wide bandwidth multistage amplifier driving large capacitive load which serves as error amplifier in low-voltage and low-power condition .

  19. 采用内置的负载电容并由内置的电容计对等效负载电容实现实时测量,采用间接测量方法测量负载谐振电阻,可显著提高其负载谐振参数的测量精度。

    The high measuring accuracy of load resonant resistance can be obtained by utilizing inner load capacitor and the real time measurement of its capacitance and indirect measurement load resonant resistance .

  20. 矿用本安电源上电时,容易因负载电容充电造成本安电源误动、可靠性变差;

    When the mine intrinsic safe power was energized , due to the loading , the mine intrinsic power would have miss actions and poor reliability occurred by the capacitor charging .

  21. 本论文就串联谐振充电电源的基本工作原理进行了详细的分析,推导出了充电过程中谐振电流、谐振电容和负载电容电压解析表达式。

    The thesis has a detailed analysis about the theory of series resonance capacitor charging power supply . It lists the expressions of the resonance current and voltage expressions of the resonance capacitor and the load capacitor .

  22. 对于晶体管软错误敏感性的分析,主要从注入电荷、节点负载电容、工艺尺寸和电源电压等方面,讨论了这些因素对粒子撞击产生的脉冲的幅度和宽度的影响。

    The approach of sensitivity analysis of transistor is referred to analyze the injected charge , load capacitance , the size of transistors and supply voltage etc , which can influence the amplitude and width of the transient pulse caused by particle strikes .

  23. 采用分布式微机械传输线结构实现了两位移相器,并且为了减小传输线负载电容和驱动电压首次提出了用共面波导传输线来驱动微机械桥的结构(共面波导驱动结构)。

    A two-bit phase shifter with distributed microelectromechanical system ( MEMS ) transmission line ( DMTL ) is developed , and a novel structure which be actuated by coplanar waveguide transmission line ( CPW-actuation structure ) is proposed , which can reduce the actuation voltage significantly .

  24. 本文利用双晶体进行频率温度补偿,详细地论述了其补偿的原理和计算方法,并给出了补偿后频率特性曲线与单个晶体特性和负载电容的关系。

    This paper describes the compensation of frequency temperature with double crystals : the principle of compensation , the method of calculation , the relationship between the frequency character curve after compensation and the single crystal character , and the relationship between the frequency character curve and the load capacity .

  25. 大功率单相负载平衡电容的最优分级

    Optimal Grading of Balancing Capacitors for Large Single-phase Loads

  26. 机械化学法制备高比表面积碳负载NiO超级电容器材料

    Mechanochemical Synthesis of High Surface Area Carbon Deposited Supercapacitor Materials NiO

  27. 高比表面积碳负载NiO超级电容器材料的制备、表征及性能研究

    A Study on the Synthesis , Characterization and Properties of High Surface Area Carbon Supports NiO Supercapacitor Materials

  28. 本文从MOS管电容模型出发详细分析了MOS源漏自举电路的自举物理过程,认为其中负载管栅电容主要起耦合作用。

    The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling .

  29. 互连线负载的有效电容计算模型

    A Model of Computing the Effective Capacitance of Interconnect Load

  30. 在大量仿真数据以及当前集成电路设计工艺的基础上,提出了一种简单互连线负载的有效电容计算模型。

    A simple and efficient model was presented for computing the effective capacitance of interconnect load based on simulation and integrated circuit process .