碳化硅材料

“黄帝”牌柴油颗粒捕集器采用重结晶碳化硅材料，拥有自主知识产权，产品性能达到欧V标准。

Huangdi brand diesel particulate filter applies recrystallized silicon carbide with proprietary intellectual property rights and meets Euro V standard .

不同气氛下合成的SiAlON结合刚玉或碳化硅材料的研究

Study on SiAlON bonded corundum or SiC composites synthesized in different atmospheres

对氮化硅结合碳化硅材料进行了掺入稀土的系统实验，并对产品进行了力学性能测试和X射线衍射测试。

A systematic study of doping rare earths into the silicon nitride bonded silicon carbide material had done . The results of X-ray diffraction and mechanics properties testing were obtained .

研究了反应烧结碳化硅材料（RBSiC）900℃的氧化过程以及制备参数和掺杂元素对氧化过程的影响。

The oxidation behavior of reaction bonded silicon carbide ( RB SiC ), and the effects of process parameters on the oxidation , were studied .

反应烧结碳化硅材料的Na2CO3熔盐腐蚀行为研究

Corrosion of Reaction-Bonded Silicon-Carbide by Molten Sodium Carbonate

理论和实验分析表明，碳化硅材料的优异性能与MPS结构的优势相结合，是当今功率开关管发展的趋势。

Both theoretical analysis and experiments demonstrate that SiC MPS is the trend of development of power switching diodes in the future .

从碳化硅材料的晶体结构出发分析了碳化硅材料中杂质的不完全离化，采用SiCMOS反型层薄层电荷数值模型，研究了杂质不完全离化对p型6H-SiCMOSC-V特性的影响。

The effect of incomplete ionization of impurity on C-V characteristics of p-type 6H - SiC MOS is researched based on Charge-Sheet model for SiC MOS inversion layers .

应用特定的工艺条件将碳化硅材料制成MEMS器件，可以在某些特殊条件下使用，克服了常规材料本身的局限性，从而为碳化硅材料的应用开发了新的领域。

The SiC MEMS devices fabricated with special processing techniques can be used in such harsh environment and overcome the shortcoming which using conventional material and so , it appears to be an ideal material for MEMS application .

MPS结构的应用，在保留SBD正向特性的同时，大大提高了其反向特性，而碳化硅材料的应用更加强化了MPS的这一优势。

The application of MPS structure improves the reverse characteristics and preserves the forward characteristics of SBD . And the application of Silicon carbide enhances the advantage of MPS structure .

添加剂对二氧化硅包裹碳化硅材料性能的影响

Effects of Additives on Properties of Silica Bonded Silicon - carbide

非晶碳化硅材料与光学微腔的制备与发光

Preparation and Luminescence of Amorphous SiC Material and Its Optical Microcavity

低k/碳化硅材料与铜互连线的工艺整合

Process Integration of Low k / SiC Materials with Cu Interconnects

氮化硅结合碳化硅材料抗氧化性能的研究

Study of oxidation resistance of silicon nitride bonded silicon carbide

氮化硅结合碳化硅材料反应烧结时的杂质相行为分析

Analyze on Impurity Phrase of Si_3N_4-bonded SiC Material When Sintered

反应烧结是制备碳化硅材料的廉价工艺。

Reaction - Sintering is an economical process for fabrication of SiC .

碳化硅材料中游离硅及游离碳对性能的影响

The influence of free silicon and free carbon to Melt-infiltrated Silicon Carbide

反应连接碳化硅材料接头的力学和电性能

Mechanical and Electrical Properties of Reaction-formed Joints in Silicon Carbide Ceramic Materials

某些碳化硅材料的内耗和热震损伤

Internal friction and thermal Shock damage for some SiC materials

渗硅碳化硅材料结构与性能关系的研究

Study on the structure and properties of Melt-infiltrated Silicon Carbide

金属微粉对碳化硅材料性能的影响

Influence of metal powder on properties of silicon carbon

自结合碳化硅材料高温氧化行为研究

High Temperature Oxidation Behavior of Self Bonded Silicon Carbide

高温氧化对渗硅碳化硅材料强度的影响

Influence of Melt-infiltrated Silicon Carbide on High Temperature Oxidation

渗硅碳化硅材料的研究

Study on Reaction of Si , R , Si-SiC

渗硅碳化硅材料的制备与性能研究

Manufacture and Properties of Melt - infiltrated Silicon Carbide

我们采用碳化硅材料，利用捣打技术恢复一号炉卫燃带。

We repair the burner brand with carborundum by the technique of ramming .

碳化硅材料被动氧化机理及转捩温度分析

Passive Oxidation Mechanism and Transition Temperature of Silicon Carbide

碳化硅材料在冰晶石熔液中的侵蚀行为

Corrosion behavior of silicon carbide in molten cryolite

碳化硅材料的特性、制备及其应用

Properties , Preparation and Applications of Silicon Carbide

拓扑法计算硅/碳化硅材料的电阻率

Calculation of electrical resistivity of new silicon / silicon carbide material by topological method

硅/碳化硅材料用作电解铝热电偶保护管的可行性研究

Feasibility of Si / SiC Materials Used as Thermal Protection Tube in Molten Electrolysis Aluminium