沟道效应

应用沟道效应对CaGe系列磁泡材料进行离子注入特性的研究

Channeling Effects on Ion Implantation for CaGe Magnetic Bubble Materials

低能Si~+离子注入GaAs材料的沟道效应和射程分布

Channeling Effect for Low Energy Si ~ + Ion Implantation in GaAs

双栅MOS场效应晶体管的短沟道效应

The Short Channel Effect of Dual-Gate MOS Field-Effect Transistor

为了使沟道效应最小，GaAs靶应稍偏离离子束的轴向。

To minimize channeling effects , the GaAs target should be misaligned from the axis of the beam .

论文首先考虑沟道效应，建立了离子注入机的设备模型，用VISUALBASIC编程实现了硅片表面离子注入工艺结果的分布图。

A equipment model of ion implant which thinks over the channel effects is established in This paper and it displays ion implant process result on silicon chip with Visual Basic programming .

根据这个电势分布，得出高k栅介质MOSFET的阈值电压模型，模型中考虑短沟道效应和高k栅介质的边缘场效应。

Based on this distribution , a 2D threshold-voltage model with the fringing-field and short-channel effects is developed for a high-k gate-dielectric MOSFET .

用BF2~+分子离子注入n型硅，由于B的有效注入能量减少，可以得到B的浅注入分布，B分布的沟道效应也明显降低。

Shallow B + as-implanted profiles can be obtained and channelling effect significantly suppressed by implanting BF2 + molecular ions into silicon , due to low effective boron energy .

使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。

The MOS model used includes short-channel effects , gate-source capacitance , gate-drain capacitance , and output resistance .

基于BSIM深亚微米级MOSFET短沟道效应建模和特征提取方法研究

Modeling and Characterization of Deep-Submicron MOSFET with Short-Channel Effect Based on BSIM TM

本文介绍了用MeV离子散射和沟道效应研究单晶铝表面无定型氧化层与基体之间界面原子结构的方法。

The experimental method for studying interface atomic structure between amorphous layer and crystal by MeV ion scattering and channeling is described .

测试结果表明，轻掺杂漏MOSFET能够有效地抗热载流子效应及短沟道效应，速度也较快。

The tested results indicated that the lightly doped drain MOSFET can resist the hot carrier effect and short channel effect effectively , and havs a fast speed .

MOSFET三级模型也成为半经验模型，这个模型不仅包括了亚阈值情况，而且还试图说明了短沟道效应和窄沟道效应。

MOSFET three models have also become semi-empirical model , this model includes not only the sub-threshold conditions , but also attempts to explain the short-channel effect and narrow channel effects .

同时用实验结果表明，新结构器件能够有效抑制短沟道效应（SCE）、减小漏感应势垒降低效应（DIBL）等。

It was also shown that the novel device could suppress the short channel effect , drain-induced barrier lowering effect .

短沟道效应是MOS器件特征尺寸进入Sub-100nm后必须面对的关键挑战之一。

The Short-channel effect ( SCE ) is one of the key challenges we have to deal with when the feature size of the MOS devices is scaling down into the sub-100 nm regime .

还研究了高k栅介质对DMGSOIMOSFET的影响，为高k栅介质DMGSOIMOSFET建立了表面势模型，模型中考虑了边缘电场效应和短沟道效应。

An analytical subthreshold surface potential model for the DMG SOI MOSFET with high k gate dielectrics , which accounts for the short channel effect and the fringing field effect , has been developed .

本文详细地分析了薄膜SOI器件一系列有益的特性，如：较大的亚阈值陡度，扭曲（kink）效应的消除以及短沟道效应的削弱等。

A number of useful properties of thin-film SOI devices , such as Sharp subthreshold slopes , absence of kink effect and reduction of the short-channel effect etc. are analyzed in detail in this paper .

和传统平面结构MOSFET相比，新结构MOSFET具有更好的性能（如改善的沟道效应（SCE），理想的漏诱生势垒降低效应（DIBL）和亚阈值特性）和更大的驱动电流等。

Compared with the traditional planar MOSFET 's , MOSFET 's with novel structures have better performance , such as improved SCE , ideal DIBL and sub-threshold slope , as well as higher driving ability .

利用Melnikov方法分析了系统的全局分叉和它的混沌行为.指出了超晶格沟道效应的无规现象与系统混沌的相关性。

The global bifurcation and chaotic behaviours are analysed using Melnikov technique , indicating that the random phenomenon of the channelling effect of the superlattice are related to chaotic behaviours of the system .

形（应）变超晶格的沟道效应与系统的相平面特征

Channeling Effect of Strained Superlattice and Phase Planar Characteristics of System

沟道效应的运动阻尼与系统走向混沌的临界特征

Motion damping in channelling effects and the chaotic behaviour of a system

InGaAs/GaAs应变异质结中的反常离子沟道效应

Anomalous ion channeling effects in ingaas / gaas strained Heterojunctions

阻塞的水管堵塞了沟水。沟道效应和阻塞效应

Clogged pipes backed up drain water . channeling effect and blocking effect

弯晶的沟道效应

Measuring horizontal angles by method of round-reiteration channeling effects in bent crystal

离子注入中的沟道效应控制

Control of Channel - effect in Ion Implanting Process

质子在α-LiIO3单晶中的沟道效应研究

Channeling of proton in α - liio_3 single crystal

高能粒子在碳纳米管绳里的沟道效应

High Energy Particle Channeling in Nanotubes-Rope CARBON NANOTUBES

沟道效应在粒子物理中的应用

Application of channel in G to particle physics

荷能带电粒子在碳纳米管绳内的沟道效应

Energetic charged particle channeling in nanotube rope

用沟道效应研究束箔离子的极化机制

Study on the polarization mechanism of the beam-foil interaction ions by using the channeling effect

沟道效应及其粒子的非线性行为

Channeling Effect and Nonlinear Behaviours of Particle