抛光液

通过改变双面抛光机压力和速度参数、抛光液参数等对磁盘微晶玻璃基板进行了抛光实验，得出磁盘微晶玻璃基板抛光的最佳工艺参数。

Through the change two-sided buffing machine pressure and the speed parameter , the polishing fluid parameter and so on , we obtain the best craft parameter which the disk crystalline glass substrates are polished .

总结了选择抛光粉、抛光模及配制抛光液的方法：介绍了自行开发的CCOS软件；

The method of choosing polishing powder and polished die and compounding polishing fluid is generalized ; The software of CCOS is introduced ;

pH值和浓度对CeO2抛光液性能影响的研究

The Effect of pH Value and Solid Concentration on the Properties of Cerium Oxide Slurry

采用有机碱和过氧化氢作为抛光液的pH值调节剂和氧化剂，分析化学机械抛光过程中化学作用对抛光过程的影响。

Organic alkali and hydrogen peroxide were used as pH regulator and oxidant to analyze the effect of chemical action on CMP process .

钢铁电抛光液Cr（Ⅵ）与Fe~（3+）浓度快速测定

Rapid Determination of Cr ( VI ) and Fe ~ ( 3 + ) lon Concentration in Steel Electropolishing Bath

抛光液中磨料和化学成分对单晶MgO基片化学机械抛光的影响

Influence of abrasive and chemical composition on chemo-mechanical polishing of MgO single crystal substrate

铜CMP中SiO2抛光液的凝胶及其消除实验

Gelatin of SiO_2 slurry and its elimination in Cu CMP

二氧化硅介质层CMP抛光液研制及其性能研究

Development of SiO_2 ILD Chemical Mechanical Polishing Slurry and Its Performance Analysis

硅衬底的超精密CMP及抛光液；

Fine CMP slurry and technology for Si substrate ;

用于硬盘NiP基片CMP的一种碱性SiO2抛光液

An Alkaline SiO_2 Slurry for CMP of the NiP Substrate of Hard Disk

CMP纳米抛光液及抛光工艺相关技术研究

Study on CMP Nano - Slurry and Technology

ULSI电路层间SiO2介质CMP工艺与抛光液

Processes and Slurries in ULSI SiO_2 , ILD CMP

ULSI制造中铜CMP抛光液的技术分析

Technology Analysis on Copper CMP Slurry in ULSI Manufacturing

实验表明，此法也适用于测定铜、铝、镍的铬酸电抛光液中Cr（Ⅵ）的浓度。

The experimental results showed that the method is also suitable for determination of Cr (ⅵ) ion concentration in electropolishing baths for copper , aluminium or nickel .

ULSI铜互连线CMP抛光液的研制

CMP Slurry of Copper Interconnection for ULSI

ULSI制备中多层布线导体铜的抛光液与抛光技术的研究

CMP Study of Multilayer Wiring Conductor Copper in ULSI Manufacturing

结果表明采用Al2O3和自制的SiO2悬浊液作为抛光液是获得高质量晶体基片的前提。

The result shows that the match employment of Al2O3 with SiO2 turbid liquid is the prerequisite for the high quality substrate .

ULSI铜多层布线中钽阻挡层CMP抛光液的研究与优化

Study and Optimization of CMP Slurry Used to Tantalum Barrier Layer of Copper Interconnection in ULSI

研究了氧化铈抛光液颗粒浓度和pH值的变化对抛光液悬浮性能、接触角和粘度的影响。

The effect of pH value and solid concentration on the properties of cerium oxide slurry was studied , such as stability , contact angle on Si ( 100 ) surface and viscosity number .

实验结果表明：该抛光液适用于Cu化学机械抛光过程第一阶段的抛光，并达到了高抛光速率及铜/钽/介质层间的高选择性的效果。

The experimental result shows that the slurry is suitable for the first polishing of Cu CMP process with faster removal rate of Cu and high selectivity between Cu / Ta / SiO 2 .

并通过抛光液对蓝宝石的化学作用分析CMP加工对蓝宝石表面的影响。

By the chemical action of polishing slurry for sapphire , the effect of CMP processing for the sapphire surface was analyzed . 2 .

提出了在碱性抛光液中铝薄膜化学机械抛光的机理模型，对抛光液的pH值、磨料、氧化剂浓度对过程参数的影响做了一些试验分析。

A model for Al thin film CMP in alkaline polish slurry was introduced . Experimental analysis was performed concerning the influence of process parameters , such as the slurry pH value , the abrasive , the oxidant concentration .

通过调节pH值，降低抛光液的氧化，增强有机碱的作用，来降低铜的去除速率并提高钽的去除速率，得到了很好的铜/钽抛光选择性。

Adjusting pH value , reducing oxidation of slurry , and enhancing action of organic alkali are methods to reduce removal rate of Cu and increase removal rate of Ta , consequently gain a good selectivity of Cu / Ta .

通过改变抛光液中粒子的微极性，用实验研究了微极性效应对CMP中材料去除速率的影响，证明了分析的合理性。

The effects of micro-polarity on material removal rate in CMP process were experimentally investigated by altering the polarity of the slurries , which support the theoretical analysis .

目前，CMP的抛光液通常使用纳米级颗粒来加速切除和优化抛光质量。

Currently , the slurries used in CMP usually contain particles at nano scale to accelerate the material remove ratio ( MRR ) and to optimize the planarity .

通过均相沉淀法制备了不同粒径的CeO2超细粉体，并配制成不同氧化剂浓度和pH值的抛光液对GaAs晶片进行化学机械抛光。

Ultra fine powders of cerium dioxide with different sizes were prepared via homogenous precipitation and were collocated into polishing slurry with different concentration of H2O2 and pH value for chemical-mechanical polishing of GaAs wafer .

以高浓度纳米SiO2水溶胶为磨料，H2O2为氧化剂的碱性抛光液，研究了适用于终抛铜/钽的CMP抛光液。

Based on alkaline slurry that used high concentration nanometer silica gel as abrasive and hydrogen peroxide as oxidant , a kind of slurry that fits in Cu / Ta CMP is studied .

Cu-CMP抛光液中有机碱的化学作用实验分析

The Experimental Analysis of Chemical Reaction of Organic Alkali in Cu-CMP Slurry

在分析抛光液组成成分的基础上，总结了现有的以H2O2为氧化剂的抛光液和其他酸性、碱性抛光液以及抛光液中腐蚀抑制剂的研究情况；

According to the ingredient of slurry , the research results such as slurries that contents H 2O 2 as oxidant , acidic or alkaline media and the corrosive inhibitor in the slurry were summarized .

分析了W-CMP的机理，抛光液对W材料表面具有化学腐蚀和机械研磨的双重作用，对抛光速率有着重要的影响。

The mechanism of W-CMP was analyzed , the slurry makes a dual function of chemical erosion and mechanical lapping , has an important influence on the polishing rate .