抛光片

LED用GaAs抛光片清洗技术研究

Research on Cleaning Process of GaAs Polished Wafer for LED

LED用GaAs抛光片清洗技术研究可用某种刺激性小的肥皂和温水进行初期清洗。

Research on Cleaning Process of GaAs Polished Wafer for LED Some type of bland soap and warm water may be used for initial cleaning .

LED用砷化镓抛光片表面状态研究

Study on the Surface-State of GaAs Polished Wafer for the Use of LED

太阳电池用Ge抛光片清洗技术的研究进展

Progress on Cleaning Technology of Ge Polished Wafers for Solar Cell

SiC抛光片表面氧化行为的XPSS、EM研究

Study on the oxidation on surfaces of the polished SiC wafer by SEM XPS

GaAs抛光片腐蚀过程初步研究

Primary Study of Etching Process for Polished GaAs Wafers

为此，研究SiC单晶抛光片的加工技术和表面质量的表征方法具有较高的实用价值。

Therefor , it has higher practical value to research the processing and characterization techniques for polished SiC single crystal wafer .

InSb抛光片表面粗糙度分析

The Analysis for Surface Roughness of InSb

三种磁感应强度下，在[111]晶向单晶硅抛光片上，Cr镀层都以（110）晶面择优生长。

On silicon polished wafer whose orientation index is [ 111 ] , the Cr coating all by ( 110 ) crystal face preferred grow at three magnetic induction intensity .

在此基础上获得了开盒即用（EPI-READY）、具有良好晶格完整性、表面无损伤的InP单晶衬底抛光片。

Finally , epi - ready InP polished single crystal wafer with high lattice perfection , free of surface damage , is obtained .

本文研究了用SVG-18DWC双面擦片机刷洗经RCA工艺清洗后的硅单晶抛光片表面。

The surfaces of single crystal silicon wafers cleaned by RCA Process were experimentally brushed with SVG-18DWC double-side scrubbing machine .

用X射线光电子能谱分析技术（XPS）研究了几种砷化镓抛光片及经不同表面处理方法处理的砷化镓晶片表面的化学计量比和表面化学组成。

A measurement method of GaAs surface composition and Ga / As atomic ratio was developed using X ray photoelectron spectroscopy ( XPS ) . A series of GaAs polished wafers and GaAs wafers treated with some chemical solutions were studied by XPS .

为了验证这种方法的有效性，对φ300mm再生抛光片进行上述清洗工艺的效果评定。

In order to validate the effectiveness of this method , 300 mm final polished wafers to be reclaimed were tested in the proposed cleaning process .

重点叙述了CMP技术所采用的设备及消耗品，CMP过程机理，抛光片的检测及影响抛光片质量的因素，CMP技术的应用及发展趋势。

The introduction mainly focused on the used equipment and consumables used in the CMP technique , the process mechanism , the detecting of the wafer and the factor affecting the wafer quality , the application and development of the CMP technique .

本文描述了用冲击合成方法得到的超硬材料纤锌矿型氮化硼（WBN）制作的一种新型抛光片。

We described in the paper a new type of polishing pill manufactured by using a rensentlysynthesized superhard ceramic powders of wurtzite-type boron nitride ( WBN ) .

结果表明砷化镓抛光片的表面自然氧化层中含有Ga2O3、As2O5、As2O3及元素As；

The results show that the native oxide layer on GaAs surface is composed of Ga 2O 3 , As 2O 5 , As 2O 3 and element As ;

本文通过DLTS深能普和I-V反向特性的测试，研究了经氧本征吸除处理的晶片（I-G晶片）和一般抛光片（原始晶片）在电学性能上的差别。

The difference between oxygen intrinsic gettering wafer and commonly polished wafer is investigated using the measurements of DLTS and I-V. After the I-G treatment , I-G wafers have excellent properties in negative bias , but a deep level trap centers of Ec-0.49 ( eV ) has been found .

用于光学冷加工的聚氨酯抛光片

A Study of PU Polishing Films for Optical Cold Processing

GB/T4058-1995硅抛光片氧化诱生缺陷的检验方法

Test method for detection of oxidation induced defects in polished silicon wafers

一种新型的固着磨料抛光片&WBN抛光片的制作工艺及其特性

Fabricating technology and characteristics of a new type Of WBN polishing pills

8英寸直拉硅单晶抛光片

The Czochralski silicon monocrystalline polished wafer with a diameter of eight inches

浅述光学抛光片结合剂的选择与应用

Review of the Selection and Application of Adhesives for Optical Polishing Pill

GB/T6621-1995硅抛光片表面平整度测试方法

Test methods for surface flatness of silicon polished slices

对抛光片清洗技术的研究

A study of technique for cleaning polished silicon wafer

Φ125mm硅抛光片成品率的控制

Quality Control for Yield of 125 mm Silicon Wafer

GB/T6624-1995硅抛光片表面质量目测检验方法

Standard method for measuring the surface quality of polished silicon slices by visual inspection

电解抛光片的研制及应用

Development of New Soft Tool for Electrolytic Polishing

用缩醛树脂制作光学抛光片

Application of Polyvinylacetate in Fabricating Optical Polishing Pills

光学抛光片的加工方法

The Processing Method for Optical Polishing Pill

用光反射测试方法检测的硅抛光片和外延片表面的图谱

The surface quality patterns of polished silicon wafers and epitaxial wafers measured by light reflection method