化学气相淀积

AlCl3-NH3-N2体系化学气相淀积AIN超细粒子Ⅱ.AIN的粒度及分布模型

Synthesis of AlN Ultrafine Particles by CVD of AlCl_3-NH_3-N_2 System ⅱ . Modelling Study of Particle Size and Distribution of AlN

这个高的数值可以和从化学气相淀积外延得到的数值相比拟。

The higher value is comparable to those obtained in CVD epitaxy .

Fourier拟谱方法及晶体生长的化学气相淀积过程的数值模拟

Fourier Pseudo-spectral Method and Numerical Simulation of CVD Process in Crystal Growth

等离子体化学气相淀积法生长Y2O3薄膜

Plasma CVD growth of y_2o_3 , thin film

采用金属有机化学气相淀积外延技术生长外延材料，并在GaAs集成电路工艺线上完成工艺制作。

The device is achieved by metal organic chemical vapor deposition and GaAs integrated circuit processing technology .

立式冷壁反应器中化学气相淀积TiN涂层Ⅰ.淀积参数对反应速率和涂层质量的影响

Chemical Vapor Deposition of TiN Coating in Cold-Wall Reactor ⅰ . Effects of Deposition Parameters on Reaction Rate and Film Qualities

TiO2膜的激光化学气相淀积

Synthesis of TiO_2 Films by Laser CVD

等离子体化学气相淀积TiO2薄膜材料

TiO_2 Thin Film Materials by MO-P-CVD

化学气相淀积块状多晶硅电导的Arrhenius特性

Arrhenius Behavior of the Conductivity in Chemically Deposited Bulk Polysilicon

采用金属有机物化学气相淀积（MOCVD）技术在蓝宝石衬底上制备了样品。

The corresponding two samples were grown by metal-organic-chemical-vapor-deposition ( MOCVD ) on sapphire substrate .

微波等离子体化学气相淀积ZrO2薄膜的表面形貌研究

Research on Surface Morphology of ZrO_2 Thin Films Deposited by Microwave Plasma Assisted CVD Process

利用超高真空化学气相淀积（UHV/CVD）设备，在掺Asn+型Si衬底上生长了掺Pn-型Si外延层。

N & type silicon epitaxial layers were grown on arsenic-doped n + - type silicon substrate by ultra-high vacuum chemical vapor deposition ( UHV / CVD ) .

本文报道了用微波等离子体化学气相淀积（MP&CVD）技术从SiH4+H（？）进行a-Si∶H薄膜的高速淀积研究。

A microwave plasma chemical vapor deposition method was used to deposit a-Si : H films at high rate .

报道了一种新型半绝缘键合SOI结构，采用化学气相淀积加外延生长键合过渡多晶硅层的方法实现了该结构。

A novel semi-insulation bonding SOI structure that is realized by LPCVD and introducing an epitaxial interim polysilicon layer is reported .

蓝宝石衬底上6H-SiC单晶薄膜的化学气相淀积生长

Single-crystalline 6H-SiC heteroepitaxial growth by chemical vapor deposition on sapphire substrates at reduced temperatures

首先优化设计了器件结构，并利用金属有机物化学气相淀积（MOCVD）进行了器件的外延生长。

The device structure is optimized firstly , then the structure is grown by metal organic chemical vapor deposition ( MOCVD ) .

本文研究了以低压化学气相淀积方法生长PSG表面钝化膜中磷的含量对横向PNP管放大倍数的影响。

The effects of phosphorus content on magnification of PNP transistor in PSG film by LPCVD have been investigated .

分别对300°C下采用等离子体增强化学气相淀积（PECVD）和700°C下采用热氧化技术制备应变硅沟道MOS器件栅介质薄膜进行了研究。

An investigation is made into preparations of thin gate-oxides for strained Si channel MOSFET 's using PECVD at 300 ° C and low-temperature ( 700-800 ° C ) thermal oxidation , respectively .

研究了用化学气相淀积方法制备的sno2薄膜的组成。

The chemical composition , crystal structure and gas sensitive character of the thin sno_2 films by CVD method have been studied .

采用金属有机化合物的化学气相淀积法，以β-二酮螯合物为源物质，在多孔Al2O3衬底上成功制备了超薄钯钇合金膜。

A metal-organic chemical vapor deposition ( MOCVD ) process with metal β - diketone as precursor was applied to preparing Pd and Pd-Y alloy composite membranes on porous alumina substrates .

在等离子体增强化学气相淀积系统中，采用aSi：H层淀积和原位等离子体氧化相结合的逐层生长技术制备了aSi：HSiO2多层膜。

We prepared a-Si : H / SiO 2 multilayer by using layer by layer deposition of a-Si : H sublayer and in-situ plasma oxidation in the plasma-enhanced chemical vapor deposition system .

为解决金属有机化合物化学气相淀积（MOCVD）设备温度控制的非线性、时变性以及大滞后等问题，给出了一种用模糊控制和预测控制相结合的复合控制方法。

This paper presents a new fuzzy predictive control method for the MOCVD device control system set to handle the non-linearity , time variability and large delay of plant controls .

简要介绍了Si3N4膜的制备方法及CVD法制备的Si3N4薄膜的特性，详细介绍了低压化学气相淀积（LPCVD）氮化硅的工艺。

This paper introduced the preparation technologies and properties of CVD for Si_3N_4 films and the process of low pressure chemical vapor deposition ( LPCVD ) .

采用新近研制的高真空/快速热处理/化学气相淀积（HV/RTP/CVD）系统生长了应变SiGe材料。

The strained SiGe material has been grown by using the newly developed High Vacuum / Rapid Thermal Processing / Chemical Vapor Deposition ( HV / RTP / CVD ) system .

化学气相淀积过程的热力学分析&Ga-Al-HCl-NH3-H2体系

A Thermodynamic Analysis of The Chemical Vapor Deposition of Ga_xAl_ ( 1-x ) N from Al-Ga-HCl-NH_3-H_2 System

等离子体化学气相淀积新型低介电常数SiCOF介质薄膜

Preparation of Low Dielectric Constant SiCOF thin Films by Plasma Enhanced Chemical Vapor Deposition

本文用常压化学气相淀积法（APCVD）制备了α－Fe2O3薄膜，对所制备的薄膜进行了X射线衍射分析和表面形貌（SEM）分析。

Haematite (α Fe 2O 3 ) thin films are prepared by atmospheric pressure chemical vapour deposition ( APCVD ) . The films are characterized by X ray diffraction and scanning electron microscopy ( SEM ) .

利用金属有机物化学气相淀积（MOCVD）生长了InGaN/GaN多量子阱（MQWs）结构，研究了生长停顿对InGaN/GaNMQWs特性的影响。

InGaN / GaN MQWs structures were grown by MOCVD . The effects of the growth interruption time on the optical and structural properties of InGaN / GaN MQWs were investigated .

简要概述了脉冲激光蒸发淀积（PLED）和激光诱导化学气相淀积（LCVD）的基本原理、淀积系统和激光器。

The basic principles , deposition systems and laser sources of pulsed laser evaporation depo - sition ( PLED ) and laser-induced chemical vapor deposition ( LCVD ) are simply introduce .

化学气相淀积反应器中成核与成膜控制

Controlling of particle formation and film growth in the CVD reactor