势垒电容

P~+-N结正向势垒电容异常变化变容管模型的最佳化

The Optimization of the Varactor Model Anomalous Chang in P ~ + N Junction 's Forward Barrier Capacitance

用计算机辅助设计，给出P~+-N结正向势垒电容异常变化的变容管模型的最佳值解。

The optimum numerical solution of the varactor model " anomalous change in P + - N junction 's forward barrier capacitance " has been presented with CAD .

晶体管发射极势垒电容C（Te）的测试及数据处理

Test and Data Processing of Emitter Junction Barrier Capacitance C Te of Transistor

反映晶界势垒电容的电容量随含Ag量的增加而减小。

The capacitance reflecting the grain-boundary barrier capacitances decreases with the increase of Ag content .

基于可动电荷的SiGeHBT势垒电容

Junction capacitance in the SiGe HBT based on movable charge

并通过测量室温时低频势垒电容，得到了隙态密度分布函数模型等价的标准。

An equivalence standard of distribution function models of gap state density is obtained by measuring the low frequency capacitance of Metal / a-Si in room temperature .

本文介绍一种基于固定偏压下，均匀掺杂材料的电阻率与其形成结时的势垒电容相对应的电容测量法。

This paper presents a capacitance method which is based on that the resistivity of the material with uniform doping has an one-to one correspondence relation to the barrier capacitance when a junction at fixed biasing voltage is formed .

金属/非晶硅势垒低频电容中等价的隙态密度分布

The Equivalent Distribution of Gap State Density in Low Frequency Capacitance of M / a-Si Barrier

本文证明：在一定条件下，描述非晶硅隙态密度分布的三种基本函数，即均匀分布、指数分布和双曲分布，在计算金属/非晶硅势垒低频电容时也是等价的。

In this paper we demonstrate that under certain conditions the three basic distribution function models to describe the gap state density of amorphous silicon ( a-Si ), i.e. uniform distribution , exponential distribution and hyperbolic distribution are also equivalent in calculating low frequency capacitance of Metal / a-Si barrier .

硅衬底厚度和背接触势垒高度对MOS电容器性能的影响

Influence of Si-Substrate Thickness and Barrier Height of Back Contact upon the Characteristics of MOS Capacitor

晶界势垒对晶界层电容器性能的影响

Influence of Grain Boundary Barrier on the Electrical Properties of Grain Boundary Layer Capacitor

在SiGeHBT载流子输运基础上，建立了考虑发射势垒区载流子分布的势垒电容模型和不同电流密度下的集电结势垒电容模型。

Based on the consideration of carrier transit of the SiGe HBT , the B-E junction capacitance model related to carrier distribution and the B-C junction capacitance model under different current densities are established and analysed .