势垒

用梯形势垒模型计算偏置AlAl2O3铁磁金属（Fe，Co，Ni和Ni80Fe20）隧道结的IV曲线，通过与结在77K温度下的实验IV曲线拟合决定了结的势垒参数。

A trapezoidal barrier potential was used to model Al Al 2O 3 ferromagnetic metal ( Fe , Co , Ni and Ni 80 Fe 20 ) biased tunnel junctions .

对所制备的3种结构器件的EL进行了比较，研究了结构对发光起因的影响，揭示通过调节有机层和无机层厚度以及界面势垒高度可以实现对发光区域的控制。

By changing the thickness of organic and inorganic layers or adjusting the relative height of barrier potential at organic-inorganic interface , we can control the emission zone and obtain different emission from each layer .

常温下C（60）晶体中分子旋转势垒的研究

Study on the Rotational Barriers of C_ ( 60 ) Molecule in Crystal at Room Temperature

建立了高k栅栈结构与沟道交换载流子的双势垒-单势阱结构模型。

Double barriers and single well structure model for carriers exchange is established .

晶体管发射极势垒电容C（Te）的测试及数据处理

Test and Data Processing of Emitter Junction Barrier Capacitance C Te of Transistor

ZnO压敏陶瓷晶界势垒高度和宽度的研究

Research of Barrier Height and Width in ZnO Varistor Ceramics

清晰热成象红外双色肖特基势垒CCD图象传感器

An Infrared Bi Color Schottky Barrier CCD Image Sensor for Precise Thermal Images

测试了Ti／a－Si界面的I－V特性，发现界面无势垒；

No potential was found after testing the characteristic of Ti / a Si interface .

研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。

Schottky barrier diodes with different metal on III nitride have been fabricated .

ZnO薄膜紫外光敏特性及晶界势垒的研究

Study on the UV photo-sensitive characteristic and grain boundary barrier of ZnO thin films

ZnO-Bi2O3系压敏陶瓷的导电过程与等效势垒高度

The conduction process and the equivalent barrier height in ZnO-Bi_2O_3 based varistor ceramics

逐个电子双柱衍射和势垒贯穿的MonteCarlo计算机模拟

Monte Carlo computer simulation on one-by-one electron diffraction around double cylinders and potential barrier penetration

结果表明，当p型掺杂水平增高时，所需要的势垒高度减小，即Al组分减小。

The results indicate that the appropriate barrier height ( the Al mole fraction ) is lower when the p-doping concentration is higher .

八毫米GaAs梁式引线肖特基势垒混频管

8mm GaAs Beam Lead Schottky Barrier Mixer Diode

512×512元PtSi肖特基势垒IRCCD图像传感器

512 × 512 Element PtSi Schottky-barrier IR CCD Image Sensor

纳米粉体对TiO2压敏陶瓷晶界势垒结构的影响

Influence of Nano-Particle on Grain Boundary Barrier Structure of TiO_2 Varistor Ceramics

f波超导体/绝缘层/f波超导体结中势垒散射对直流Josephson电流的影响

Barrier Interface Scattering Effect on DC Josephson Current in f-Wave Superconductor / f-Wave Superconductor Junctions

根据肖特基势垒的反向IV曲线，计算了势垒的反向饱和电流密度和平均理想因子。

We have calculated the saturation current density and ideality factor of the Schottky barrier with reverse characteristics .

高场下界面势垒对单层有机EL器件复合发光的影响

Influence of Interface Barriers on Carriers Recombination in Organic One-layer Light-emitting Devices at High Electric Field

磁隧穿振荡研究GaAs／AlAs双势垒结构中的Γ-X电子态混合

γ x mixing in gaas / alas double barrier structures studied by magneto tunneling oscillations

温度引起的ZnSe/Zn（0.84）Mn（0.16）Se超晶格中势阱层和势垒层的反转

Temperature-Induced Turn-Over of Well and Barrier Layers in ZnSe / Zn_ ( 0.84 ) Mn_ ( 0.16 ) Se Superlattices

论述了铜互连技术中低k介质材料、势垒层材料以及铜互连布线的大马士革工艺。

In this paper , the Damascene Cu interconnecting integration technology , low-k dielectric materials and barrier materials in Cu interconnecting integration technology are introduced .

F钝化效应体现在：（1）降低了界面势垒高度（仅为～5meV），增加了载流子的迁移率；（2）淬灭了与缺陷相关的ZnO可见发射，提高了紫外发光效率。

F passivation ( 1 ) significantly decreases the grain boundary potential barrier ( ~ 5 meV ), thus increasing carrier mobility ;

CF4预处理后热生长薄栅氧漏电流及势垒研究

Leakage Current and Electron Barrier Height of Thin Tunnel Oxide Grown on a CF_4 Pretreated Wafer

非晶硅银势垒电池的I-V曲线

The I-V characteristics of silver barrier cells on amorphous silicon films

硅衬底厚度和背接触势垒高度对MOS电容器性能的影响

Influence of Si-Substrate Thickness and Barrier Height of Back Contact upon the Characteristics of MOS Capacitor

AlGaAs∶Sn中DX中心电子俘获势垒的精细结构

Fine structures of electron capture barriers of the DX centers in Sn-doped AlGaAs

作者予言，掺入金属元素使a-Si∶H半金属化，可望进一步降低肖特基势垒高度。

It is predicted that the Schottky barrier heights can be largely decreased by doping metal elements to alloy a-Si : H.

单电子三势垒隧穿结I-V特性研究

The study of I-V characteristics of single-electron triple - barrier tunnel - junction

1/R居中Cantor分形势垒的反射系数

The reflection coefficient of middle-1 / R cantor fractal potential barrier