异质结

热丝化学气相沉积n型nc-Si：H薄膜及nc-Si：H/c-Si异质结太阳电池

Study of n-type nc-si : h films and heterojunction solar cells by HWCVD

Cu2S/CdS异质结工艺的发展

Advancement of processing for cu_2s / cds heterojunction

C（70）/GaAs异质结的电学性质

Electrical Properties of Solid C _ ( 70 ) / GaAs Heterojunctions

固体C（60）/Si异质结的电学表征&整流特性、能带模型与温偏效应

Electrical characterization of solid c60 / si heterojunctions rectifying properties , energy-band models , and bias-temperature effect

n-ZnO/p-Si异质结UV增强型光电探测器的研究

Study on n-ZnO / p-Si Heterojunction UV Enhanced Photoelectric Detectors

Si／Ge应变层异质结价带偏移的剪裁与设计

The Tailoring of Valence-Band Offsets at Strained Si / Ge Interfaces

对称性对2D光子晶体异质结导波模的影响

The influence of photonic crystal heterostructures ' symmetric on guide modes

ZnO纳米棒/有机材料异质结电致发光特性的研究

The Electroluminescence of ZnO Nanorod / organic Material Heterostructure Devices

Ge、Si的形变势及其应变层异质结的带阶

Deformation Potentials and Band Offset of Ge , Si Strained layer Heterojunction

纳米Cu2O／TiO2异质结薄膜电极的制备和表征

Preparation and Characterization of Nanocrystalline Cu_2O / TiO_2 Heterojunction Film Electrode

晶格失配对C／BN异质结价带偏移的影响

Effecfs of Lattice Mismatch on Valence-Band Offsets △ E_v in Heterojunction C / BN

GaAs双异质结激光器和多模光学纤维的耦合

Coupling of double - heterojunction GaAs laser into multimode optical fibers

ZnO基p/n异质结器件的物性研究

The Studies on the Properties of the ZnO Based p / n Heterojunction Devices

P型衬底a-Si：H/c-Si异质结太阳能电池具有重要的科学意义和应用价值。

It is of great scientific importance and practical value for investigation of a-Si : H / c-Si heterojunction solar cells on p-type crystalline silicon .

Ga（1-x）AlxAs/GaAs双异质结激光器的液相外延研究

Liquid-phase epitaxy study of ga_ ( 1-x ) al_x as / gaas double heterojunction lasers

通过对样品的结构分析初步探讨了异质结的形成机理，并以罗丹明B（RB）的脱色降解为模型反应，考察了样品的光催化性能。

The catalytic properties of the sample were studied via rhodamine B degradation as the model reaction .

In（0.25）Ga（0.75）As/GaAs应变异质结的离子沟道分析

Ion Channeling Analysis of In_ ( 0.25 ) Ga_ ( 0.75 ) As / GaAs Strained Heterojunction

稳态大注入突变异质结Poisson方程理论

Poisson 's Equation Theory for the Abrupt Heterojunctions Under the Stable Large Injection Condition

AlN／GaN异质结的价带偏移计算

The Valence - band Offsets of Heterojunction AlN / GaN

硼离子掺杂类金刚石薄膜及C（B）／n-Si异质结光伏特性

Diamond-like carbon films doped with b ions and photovoltaic property of c ( b ) / n-si heterojunction

集电区阶梯缓变InGaAsP层的具有超高f＿（max）、f＿T的双异质结双极晶体管

Ltra-High f_ ( max ) and f_TI_nP / InGaAs Double-Heterojunction Bipolar Transistors with Step-Graded InGaAsP Collector

基于有机异质结的有机-无机复合单量子阱发光性质的研究将聚酰胺（PA）质地的纳滤膜组装成一种脱盐装置。在此装置上对C。

The Emission of Organic - Inorganic Single Quantum Well with Organic Heterojunction Inorganic salt in C.

该方法计算量少，计算结果满足价带特性，适用于p型异质结器件的优化设计。

Its amount of computation is less and the computed results satisfy the valence band characteristic so that it is suitable for the optimum design of p-type heterostructure devices .

光辅助超高真空CVD系统制备SiGe异质结双极晶体管研究

Study on Fabrication of SiGe / Si-HBT by Photo-assisted UHV-CVD

用单能慢正电子束和X射线衍射方法研究了Al/n-GaSb金属半导体异质结在不同温度退火的情况下的演变。

Annealing study of the Al / GaSb system was performed by using a slow positron beam and the measurement of X-ray diffraction .

新颖的Si（1-x）Gex/Si异质结内光电发射长波红外探测器和焦平面阵列的发展

Development of Novel Si_ ( 1-x ) Ge_x / Si Heterojunction Internal Photoemission Long-wave IRD and FPA

GaAs基异质结材料MBE生长及应用

MBE Growth of GaAs-Based Heterojunction Materials and Their Application

用卢瑟福背散射/沟道技术研究ZnO/Zn（0.9）Mg（0.1）O/ZnO异质结的弹性应变

Depth-dependent elastic strain in ZnO / Zn_ ( 0.9 ) Mg_ ( 0.1 ) O / ZnO heterostructure studied by Rutherford backscattering / channeling

异质结双极晶体管（heterojunctionbipolartransistor简称HBT）是异质结电子器件重要的一种。

Heterojunction Bipolar Transistor ( HBT ) is one of important heterojunction electronics devices .

AIN、GaN立方晶体的静态性质和AIN/GaN异质结的价带偏移

The Static Properties of AlN and GaN , and the Valence-band offsets of AlN / GaN Heterojunction