剥离技术

AL、AU溅射薄膜的剥离技术研究

Study on lift-off process of AI and Au sputtering thin films

激光剥离技术中GaN材料温度场的研究

Study on temperature field of GaN material in laser lift-off technique

激光剥离技术实现GaN薄膜从蓝宝石衬底移至Cu衬底

Transferring GaN Film from Sapphire to Cu Substrate by Laser Lift - off

采用剥离技术的铝栅100位CCD模拟延迟线

An Aluminum Gate 100 - Element CCD Analog Delay Line Fabricated by Use of Lift-off Technic

剥离技术制作金属互连柱及其在MEMS中的应用

Fabrication of Metal Interlinked Pillar by Using lift-off Technology and Its Application in MEMS

剥离技术在GaN基紫外图像传感器中的应用

Application of Stripping Technique to GaN-based UV Image Sensor

基于有限元分析法的激光剥离技术中GaN材料瞬态温度场研究

Transient Temperature Field Study of GaN Material in Laser Lift-off Technique Based on Finite Element Method

FET器件寄生元件的剥离技术

De-embedding Technique of Parasitic Element for FET Device

本文提出一种以多晶硅为辅助层的剥离技术，运用该技术已研制成功铝栅100位CCD模拟延迟线。

An aluminum gate 100 - element CCD analog delay line has been fabricated using a lift - off technique employing an auxiliary poly-Si layer .

采用激光剥离技术，在400mJ/cm2脉冲激光能量密度条件下，成功地将GaN薄膜从蓝宝石衬底转移至Cu衬底。

Using the pulse laser at the energy density of 400mJ / cm ~ 2 , the GaN film was successfully transferred from sapphire to Cu .

结合激光剥离技术与生长技术获得了一定面积的厚膜自支撑GaN单晶。

Together with the help of laser lift-off ( LLO ) process and growth techniques , the thick free-standing GaN films were obtained .

采用激光剥离技术结合金属熔融键合技术将生长在蓝宝石衬底上的GaN外延层转移到Si衬底上。

GaN thin films grown on sapphire substrates are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off ( LLO ) technique .

利用AES和离子溅射剥离技术，对SiO2/GaAs界面进行了深度分布测量。

The SiO_2 / GaAs interface was measured for its depth profile by use of AES combined with ion-sputtering and stripping technique .

作者使用超薄切片，冷冻断裂和剥离技术在分析电镜中以透射（TEM）、扫描透射（STEM）和扫描（SEM）成象模式研究了兔毛纤维的微观结构。

Using ultramicrosection , cryofracture and peeling technique , the fine structure of rabbit hair was investigated in an analytical electron microscope by TEM , STEM and SEM imaging models respectively .

用TG热重仪测定Pt－Pd－Rh合金的挥发失重曲线，用X光电子能谱（XPS）和溅射剥离技术确定其氧化态表层及次表层组元化学状态和浓度。

The thermogravimetric analysis was used to measure the volatilization loss curves of Pt-Pd-Rh alloys . The X-ray photoelectron spectroscopy and the sputtering stripping method were used to determine the chemical state and the concentration of constituent on the surface and subsurface of Pt-Pd-Rh alloys .

皱纹盘鲍育苗期间稚鲍电剥离技术的应用研究

Research on the Application of Electric Stripping Technology of Cultured Juvenile Abalone

用剥离技术研究取向高聚物结构

The Investigation of Orientated Polymer Structure by Peeling Technique

露天煤矿中的爆破剥离技术

Blasting technology for overburden stripping in OPE-PIT coal mine

最后介绍了新型的正胶剥离技术在实际工作中的应用。

Finally , the applications of the new technique in UFPA were introduced .

器件采用标准的光刻和剥离技术制作。

The MSM PD is fabricated using standard optical lithography and lift-off process .

微细金属图形制作中的剥离技术

Lift-off Techniques Applyed in Fine-line Metal Pattern Fabrication

串列静电加速器的循环气体剥离技术

The Recirculation Gas Stripping Technique of Tandem Accelerator

正/负双层光刻胶厚膜剥离技术

Positive / Negative Bi - layer Resist Technique for Thick Film Lift - off

多层金属引线成形新方法&聚酰亚胺剥离技术的应用

A Novel Technique For Wire Formation of Multilayer Metals & Application of Polyimide Stripping Technique

激光剥离技术制备GaN/metal/Si的结构和光学特性研究

Structure and optical properties of GaN / metal / Si fabricated by laser lift-off and fusion bonding technique

本文基于一般的剥离技术，在连通性判别准则，边界点检测、扫描方式等三个方面提出了新的观点和改进措施，使本算法比现有的一些算法快两倍以上。

In order to raise thinning speed the author make some improvements in connectivity criteria , boundary detecting and scanning modes .

这种可用于光电子器件的衬底是由硅基乳胶粘接和智能剥离技术研制而成的。

The substrate , which is applied to optoelectronic devices , is fabricated by using Si based sol gel sticking and smart cut techniques .

采用金属转移剥离技术及离子铣技术在铝酸镧衬底上刻蚀出坡度角大于70°陡直台阶。

The steep step with the gradient angle more than 70 ° has been fabricated by means of metal transfer lift-off and ion-etching techniques .

综合考虑所摄图像序列中包含的几何轮廓信息与光亮度信息，采用立体相交技术和剥离技术，逐步求精地得到三维物体的八叉树表示。

Taking account of both silhouette information and intensity information in images , a carving algorithm is used to incrementally recovery the octree model of the object .

为改进收敛性能，反演中利用模拟退火法中的控制温度对目标函数作尺度变换，并采用了层剥离技术。

In order to improve convergence , the control temperature of simulated annealing to stretch the object function is used , and the layer stripping technique adopted .