激光退火

扩硼Si单晶激光退火的研究

The study of the laser annealing of the boron-diffused silicon single crystals

a-Si∶H薄膜的毫微秒脉冲激光退火

Nanosecond pulsed laser annealing of GD a-si : h films

离子注入Si在连续CO2激光退火时的动态反射特性

Dynamic reflection property of ion-implanted Si by CW co_2 laser annealing

强CO2激光退火时离子注入Si的光学性质

Optical properties of ion-implanted Si by CO_2 intense-laser annealing

连续波CO2激光退火消除硅中氧化层错的研究

Investigation on elimination of oxidation stacking faults in silicon by CW CO_2 laser annealing

离子注入CO2激光退火硅中的深能级缺陷

Deep-Level Defects in Ion-Implanted and CO_2 Laser-Annealed Silicon

CO2激光退火是消除离子注入引入的深能级缺陷的有效方法。

The CW CO_2laser annealing is an effective method for removing deep-level defects induced by ion-implantation .

离子注入硅CWCO2激光退火的几个重要参数研究

Study of technological parameters of CW co_2 laser annealing for ion-implanted silicon

CWCO2激光退火在硅中产生的氧沾污

In-depth oxygen contamination produced in CW co_2 laser annealed Si

CWCO2激光退火后离子注入硅片的性质研究

Study on the Property of Implanted Silicon Wafer after CW CO_2 Laser Annealing

注Zn~+-GaAs的激光退火及GaAs欧姆接触的激光合金化

Laser annealing of zn-implanted GaAs and laser alloying of ohmic contacts on GaAs

高剂量离子注入激光退火SOM上硅膜的Raman光谱

Raman Spectra of High-Dose Ion-Implanted and Laser-Annealed Silicon Films on SOM Structures

离子注入GaAs的脉冲激光退火

Laser pulse annealing ion - implanted GaAs

磷砷化镓离子注入层的CWCO2激光退火研究

Studies of CW CO_2 Laser Annealing in the Ion Implanted Layers of GaAs_ ( 1-x ) P_x

中子辐照单晶硅与激光退火制备SOI结构的研究

Fabrication of SOI structure by means of laser annealed neutron-irradiated single crystal silicon

电子吸收像表明：我们的CWCO2激光退火条件下，其效果并不很均匀。

Electron absorption image shows that the effect of CW-CO2 laser annealing is not very uniform in our case .

PECVD制备a-SiC：H薄膜及激光退火研究

Preparation of a-SiC : H Films by PECVD and Research of Laser Annealing

测得以硅片和柯伐合金片作衬底样品的最大应变灵敏度因子（以下简称GF）分别为25和20，经激光退火后可达30。

The maximum longitudinal G. F. of 25 and 20 are measured for Si and covar substrates respectively .

研究激光退火对Inconel718时效合金的显微组织和硬度的影响。一台2.5kW的CO2激光机被用来照射试样的表面。

It was studied annealing on the microstructures and hardness of aged Inconel 718 . A 2.5 kW CO2 laser was employed to irradiate the samples surface .

实验还证明：空气中的CWCO2激光退火可以减少样品表面的碳沾污，但产生氧沾污。

And it has also shown that CW-CO2 laser annealing in air would decrease the carbon contamination on the Si surface , but produce oxygen contamination .

本文报道用电子显微镜观察、X-射线衍射和红外吸收谱等方法研究a-Si：H薄膜的毫微秒（ns）脉冲激光退火的结果。

The nanosecond pulsed laser annealing of GDa-Si : H films has been studied by scanning electron microscope , X-ray diffraction and infrared absorption .

晶格恢复、注入杂质的激活率和光致发光的实验测量结果表明，CO2激光退火的效果优于常规热退火。

After the measurements on the recovery from crystal damage , elec-trical activation of implanted atoms and photoluminescence emission , it is found that CO_2laser annealing has an advantage over the thermal annealing .

离子注入硅Nd-YAG连续激光退火

CW Nd-YAG laser annealing of ion implanted silicon

利用沟道背散射、俄歇和X射线光电子能谱技术研究了Nd：YAG和红宝石脉冲激光退火的离子注入GaAs样品的表面性质。

Several surface properties of implanted GaAs after Nd : YAG and ruby laser annealing have been investigated by the techniques of RBS combined with channeling , Auger and X-ray photoelectron spectroscopy .

采用XeCl准分子脉冲激光退火技术制备了纳米晶态碳化硅薄膜（nc-SiC），并对薄膜的光致发光（PL）特性进行了分析。

Nanocrystalline silicon carbon ( nc-SiC ) from amorphous silicon carbon films was obtained through XeCl excimer laser annealing .

本文采用金属Ni诱导（Ni-MIC）和准分子激光退火（ELC）两种方式制备了高质量的多晶硅薄膜，填补了国内研究空白。

Firstly , high quality p-Si thin films are obtained using metal Ni induced crystallization ( MIC ) and excimer laser crystallization ( ELC ), respectively .

离子注入激光退火的硅毫米波段IMPATT器件初探

Try fabrication of millimeter wave IMPATT device using implanted silicon and CW nd : yag laser annealing

还提出了一种新的多晶硅薄膜的低温制备方法，即金属诱导一双次激光退火晶化法（MIbi-ELA）。

A new method to prepare p-Si thin film at low temperature was proposed , namely MI bi-ELA .

介绍基于低温多晶硅TFT技术和采用激光退火表面刻蚀技术的柔性8位异步微处理器，并且给出了异步电路描述语言Verilog+。

A flexible 8-bit asynchronous microprocessor based on low-temperature poly-silicon ( LTPS ) TFT technology , surface free technology by laser annealing and ablation ( SUFTLA ) and asynchronous circuit description language Verilog + is presented .

Si/Pd/GaAs欧姆接触的激光退火

Si / Pd / GaAs Ohmic contacts formed by laser annealing