干法刻蚀

不同添加气体对SiC材料SF6干法刻蚀的影响

Effects of Different Additive Gases on Dry Etching of SiC in SF_6

CCl2F2等离子体干法刻蚀InSb-In薄膜的研究

Research of CCl_2F_2 plasma dry etching InSb-In thin film

基于高深宽比Si干法刻蚀参数优化

Parameter Optimization Based on High-Aspect Ratio Si Dry Etching

因此，这种两步方法能钝化干法刻蚀后GaN的侧壁，有效地减小LED器件的漏电流。

This two-step treatment can efficiently reduce the reversed leakage current of GaN-based LED devices .

碳化硅（SiC）器件制造工艺中的干法刻蚀技术

Dry etching technique for silicon carbide ( SiC ) in silicon carbide device fabrication

基于Cl2基气体的InP/InGaAs干法刻蚀研究

Study of Dry Etching InP / InGaAs Based on Cl_2-based Gas

论文第二部分建立了奇点分裂算法作为刻蚀剖面的模拟算法，采用Visualc++编程实现了干法刻蚀工艺的剖面形貌模拟。

In second part of this paper , Singular point Splitting Algorithm which can simulates the etch profile is set up by Visual C + + .

减小SiO2光波导表面粗糙度的ICP干法刻蚀工艺研究

Improvement of ICP etching process for reducing the surface roughness of SiO_2 optical waveguides

化学干法刻蚀在TFT-LCD工艺中的应用

The Application of CDE in TFT - LCD Process

另一方面，经过ICP干法刻蚀，沟道的长度会出现展宽。

On the other hand , the channel length would be larger than the designed size by dry recess process .

这种技术利用氧化硅和光刻胶双层复合掩模来掩蔽厚铝的干法刻蚀，完全兼容于CMOS工艺；

This technique is fully compatible with conventional CMOS processes by employing silicon oxide and photoresist to mask thick aluminum film during dry etching .

讨论了薄膜生长的几种常用方法，说明了热氧化和化学汽相沉积（CVD）、湿法刻蚀和干法刻蚀（ICP）分别所适用的范围极其对波导性能的影响。

We also explained the difference of hot oxide and CVD ( chemical vapor deposition ), wet etching and dry etching .

采用湿法腐蚀和干法刻蚀两种工艺分别制作出了全内反射型AWG器件。

We use wet etching and RIE to fabricate the AWG device with TIR mirrors respectively .

通过光致发光（PL）特性表征发现，干法刻蚀后量子阱光致发光强度较未刻蚀量子阱光致发光强度提高了近3倍。

Photoluminescence ( PL ) measurements show that , the photoluminescence intensity of the quantum wells is enhanced about 3 times after dry etching .

3C-SiC单晶薄膜的干法刻蚀研究

Study on dry etching of 3C SiC crystalline thin films

采用微机电系统（MEMS）技术制作了悬臂梁式压电微拾振器，该技术主要包括：sol-gel法制备PZT压电膜、干法刻蚀、湿法化学刻蚀、UV-LIGA等工艺。

Piezoelectric-cantilever micro vibration pickup sensor was realized using micro-electronic-mechanical systems ( MEMS ) technique such as sol-gel , RIE dry etching , wet chemical etching , UV-LIGA .

为了提高生长初期的结晶速度，在PECVD设备和干法刻蚀设备中，利用H2/SF6等离子体对sinx薄膜表面进行处理。

To promote nucleation rate in the initial stage of silicon growth , surface of SiN_x films was treated by H_2 / SF_6 plasma using PECVD and dry etch equipment , respectively .

干法刻蚀是VCSEL制作中较普遍采用的技术，但其成本高，工艺复杂。

Dry etching is the VCSEL production of the more widely used technology , but its high cost and technological complexity of features .

湿法刻蚀具有设备简单，操作方便，所用化学药品毒性小，对GaN材料损伤小等优点，可以作为干法刻蚀的补充。

Wet etching has many advantages , such as simple equipment , convenient operation , nontoxic gases and small damage to GaN sample , so it is a useful supplement to dry etching of GaN .

利用化学干法刻蚀各向同性的特点，本文主要研究化学干法刻蚀中不同的O2/CF4比例对Mo、SiNx和光刻胶刻蚀速率的影响。

By using isotropic characteristics of CDE , the article mainly studies the influence of different O2 / CF4 ratio on etching rate of Mo , SiNx and photo resist .

采用干法刻蚀，在玻璃基板上形成了Pt电极，然后在铂电极上甩了一层PDMS胶，与上盖片进行了键合。

Form the Pt electrode in glass substrate using dry etching . And then dump a layer of PDMS glue on the top of platinum electrode , and bond with the PDMS cover . 3 .

考虑到成本，精度控制等因素，一般倾向于使用干法刻蚀来制作TSV。

Considered factors of the cost , precision control and so on , dry process is generally used to fabricate TSV .

利用Cl2/BCl3/CH4电感应耦合等离子体（ICP）干法刻蚀技术，实现了对AlGaInAs，InP材料的非选择性刻蚀。

Nonselective dry etching of the facet of AlGaInAs / AlInAs laser has been demonstrated by using Cl_2 / BCl_3 / CH_4 inductively coupled plasma ( ICP ) .

用到的镀膜技术有PECVD、磁控溅射、真空蒸发等，用光刻、湿法腐蚀、等离子体干法刻蚀等工艺制作出带有牺牲层的微桥结构。

Coating technologies used in PECVD , sputtering , vacuum evaporation , using photolithography , wet etching , dry plasma etching process with a sacrificial layer to produce micro-bridge structure .

实验先后使用氧化、PECVD镀膜、光刻、湿法和干法刻蚀、局部氧化、氧化削尖等工艺，成功地制备出二极管型刀口型边缘微尖阵列。

First , diode type knife like edges silicon tips are fabricated by oxidation , PECVD coating , lithography , wet and dry etching , local oxidation and oxidation sharpening sequentially .

Sub-100-nm特征尺寸研究及干法刻蚀技术的近代发展特点

Research on sub-100-nm pattern size and development of dry etching techniques

首先介绍了稳定FEA电子发射均匀性和可靠性的几种结构，然后提出了以离子注入和干法刻蚀技术，在常规电阻率P型衬底上制成具有串联电阻负反馈特性的单片硅FEA。

Several structures to improve the reliability and uniformity of FEA are presented . Then it was suggested that Si FEA with a series resistor feedback be fabricated on the P type substrate of common resistivity by the N ion implantation and dry etching .

经流片验证，此互连结构具有台阶覆盖能力强、热稳定性好、电阻率较低、易于干法刻蚀等特点，能满足大规模IC多层互连线要求。

This interconnect system possesses the characteristics of higher temperature resistance than aluminum , higher step coverage , better thermal stability , better adhesion , compatibility with CMOS process , easy dry etching and lower resistance , so it can satisfy the requirements of multi-level interconnects of VLSI .

分别用湿法刻蚀（HF）和干法刻蚀（NH3）对异质结界面进行预处理，可以有效钝化界面，减少因界面复合而造成的效率损失。

Then , the wet-etching ( HF ) and dry-etching ( NH3 ) were used to pre-treat the interface of heterojunction separately , which can passivate the interface effectively and reduce the efficiency loss due to the recombination at the interface .

比较研究了GaAs背面通孔腐蚀中的湿法腐蚀和ICP干法刻蚀技术，并利用感应离子耦合（ICP）干法刻蚀技术，采用CCl2F2/Ar混合气体，对GaAs衬底上的通孔工艺进行了研究。

Wet chemical etching techniques for etching via holes through GaAs substrates were comparied with an inductively coupled plasma ( ICP ) dry etching process . The latter was developed to etch via holes through GaAs substrates by using CCl_2F_2 / Ar gas mixtures .