量子点激光器

大功率In（Ga）As/GaAs量子点激光器

High Power In ( Ga ) As / GaAs Quantum Dot Laser

生长停顿对量子点激光器的影响

The influence of growth interruption on quantum dot laser

p型掺杂1.3μmInAs/GaAs量子点激光器的最大模式增益特性的研究

Characteristic study of maximum modal gain of p-doped 1.3 μ m InAs / GaAs quantum dot lasers

GaAs基长波长量子点激光器增益和阈值电流密度的理论分析（英文）

Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers '

InGaAs量子点激光器光增益的温度特性

Temperature dependence of optical gain in InGaAs quantum dots laser

研究了垂直层叠和p型掺杂对量子点激光器性能的改善，并讨论了获得极小阈值电流密度时的最佳量子点密度。

Also , the improvement of quantum dot lasers ' performance is investigated through vertical stacking and p-type doping and the optimal dot density , which corresponds to minimal threshold current density , is calculated .

最后展望了量子点激光器的研究方向。

The outlook of the future works on quantum-dot lasers is given finally .

量子点激光器和量子点能态的计算

Calculation on Lasers and Energy State of Quantum Dots

本文综述了量子点激光器的研究进展。

This paper presents an overview of the research progress on the quantum-dot lasers .

量子点激光器研究进展综述

Overview of the Research on Quantum-dot Lasers

量子点激光器作为新一代高性能器件，正在大力开发当中。

As new a generation device quantum dot lasers are being researched and developed with an effort .

通过研究工作，已经得出制备单光子源和单量子点激光器的理论方案，这为进一步实验制备量子光源提供了有力的理论指导。

After this stage research work , Schemes for achieving single photon source and single quantum dot laser have theoretically proposed . These results pave the road towards further experiments preparation .

采用量子点作为激光器的有源区时，理论上其阈值电流将不再受到温度的影响。

And using the quantum dots as the active area in the laser , the threshold current will be no more influenced by the temperature theoretically .

对量子点和量子阱激光器材料的研究有助于半导体激光器性能的改善。

The results of quantum dots and quantum well laser materials have improved the performance of semiconductor lasers .

自组织量子点在量子点激光器和量子信息中已经得到了广泛的应用。

The self-assembled quantum dots ( QDs ) have been widely used QDs laser and quantum information science ( QIS ) .

应变自组装量子点材料与量子点激光器

Laser Strained Self-Organized Quantum Dot Materials and Quantum Dot

特别是相比于传统的量子阱激光器，量子点激光器在不采用异变的前提下能够实现长波长发光，且具有较低的阈值电流、较高的热稳定性。

In particular , QD lasers is easy to achieve the longer emission wavelength and has higher temperature stability compared with conventional quantum well lasers .

介绍了实现量子点的工艺和量子点激光器的研究进程；

The fabrication technique and the progress of the quantum dot lasers were introduced then .

还提出了一种在非粒子反转条件下量子阱、超晶格和量子点激光器的红外发射机制。

We also present an infrared generation mechanism without population inversion between subbands in quantum well , superlattice and quantum dot lasers .

特别是采用InAs/GaAs自组织量子点作为有源区的量子点激光器，成为了量子点光电器件的一个重要研究方向，如何拓展发光波长也成为了量子点结构的研究热点。

In particular , semiconductor lasers with InAs / GaAs self-assembled quantum dots as active area have become an important research area in the field of QD optoelectronic devices . How to extend emission wavelength of QDs has also become a problem to be solved .

用MOCVD方法生长制备了多层InGaAs/GaAs量子点结构，并研制出量子点激光器。

In this work , InGaAs / GaAs multi-layers quantum dots are grown by using MOCVD technique and ridge-like stripe structures are fabricated .

分析表明，与普通激光器和量子阱激光器相比，Si基量子点激光器有更高的增益和微分增益，阈值电流更低，阈值电流对温度更不敏感。

Based on these analyses , we see that the Si-based quantum-dot laser has higher gain and differential gain , its threshold current is more lower and the threshold current is insensitive to temperature when Si-based quantum-dot laser compares with normal semiconductor laser and quantum-well laser .

电子能量的量子化使得量子点（特别是自组织量子点）很适合作激光器的激活层，并有可能使得基于量子点的激光器能够在更高的温度和更低的注入电流下工作。

The strong quantization of electron energy , with parameters suitable for laser action , particularly in the so-called self-assembled QDs , will probably allow QD-based lasers to be able to work at higher temperatures and at lower injection currents .

这是第一次在量子阱激光器中发现该特性，从而说明了暗脉冲现象并不是量子点激光器所特有的动力学特性，而是由光反馈所引起的一种普遍的动力学不稳定性。

This is the first report of such instability in quantum well semiconductor laser . It is concluded that the train of dark pulses is not the unique phenomena of quantum dot semiconductor laser , but is a universal phenomena induced by optical feedback . 5 .

通过对生长条件的优化，得到高密度、高均匀性的量子点MBE生长条件，这对于自组织量子点在器件方面的应用，比如量子点红外探测器和量子点激光器，是非常重要的。

In order to obtain high density and high uniformity of quantum dots , optimized conditions are concluded for MBE growth .

文章介绍了半导体量子阱、超晶格的基本物理，以及它在光电子领域中的应用，包括量子阱、量子线、量子点、激光器、光调制器、自电光效应器件、量子点器件等。

The basic physics of semiconductor quantum wells and superlattices and their applications in opto-electronics are reviewed . Topics covered include quantum wells , quantum wires , quantum dots , lasers , modulators , self-electro-optic-effect devices , and quantum dot devices .