迁移率模型

在国际上首次提出微米级和深亚微米级非均匀沟道DMOS阈值电压模型和辐照阈值电压、迁移率模型及单粒子辐照瞬态响应模型。

The threshold voltage model of micron and deep sub-micron non-uniform channel DMOS , the radiation threshold voltage model , the radiation mobility model and the transient response model of single ion radiation are internationally proposed for the first time .

还提出了改进的迁移率模型。

An improved mobility model is also proposed .

非均匀沟道MOS辐照正空间电荷迁移率模型

Mobility model of nonuniform channel MOS by radiation induced positive spatial charge

适用于宽温度范围和不同沟遭掺杂浓度的MOSFET反型层载流子迁移率模型

A Carrier Mobility Model for Wide Temperature Range and Different Channel Doping in MOSFET Inversion Layer

GaNn-MOSFET反型沟道电子迁移率模型

Modeling of Inversion Channel Electron Mobility for GaN n-MOSFET 's

在器件物理的基础上，提出了一种半经验的GaNn-MOSFET反型沟道电子迁移率模型。

A model for inversion channel electron mobility of GaN n-MOSFET 's is proposed based on semiconductor device physics .

单锥水力旋流器的迁移率模型

A computational model for migration probability of single cone liquid liquid Hydrocyclones

生物地理学优化算法的迁移率模型分析

Analysis of migration rate models for biogeography-based optimization

在集约模型的构建过程中，高温沟道电子迁移率模型的建立至关重要。

During establishing the compact model , the temperature-dependent channel-electron mobility model is very important .

在分析各种主要散射物理机制的基础上，建立起依赖温度、浓度和电场作用的载流子迁移率模型，并将体效应与表面效应有机地结合在一起。

Low temperatures carrier mobility model , considering dependence on temperature , impurity and electrical field and combining the bulk and surface effects , is presented on the basis of analysis of all major scattering mechanisms .

n型4H-SiC电子霍耳迁移率解析模型

Analytical model for the electron Hall mobility in the n-type 4H-SiC

纤锌矿GaN低场电子迁移率解析模型

An Analytic Low Field Electron Mobility Model of Wurtzite GaN

该电子迁移率解析模型对于GaN器件的数值模拟和器件仿真设计具有很强的实用意义。

The analytic electron mobility model has a strong applicability for numerical simulation of GaN devices .

在GaAs低场电子迁移率解析模型的基础上得到了纤锌矿GaN低场电子迁移率的解析模型，该模型考虑了杂质浓度、温度和杂质补偿率对低场电子迁移率的影响。

Based on the analytic low field electron mobility model of GaAs , a new analytic low field electron mobility model of wurtzite GaN is presented . The new model accounts for the dependencies of dopant concentration , temperature , and impurity compensation ratio on low field electron mobility .

半导体器件中1/f噪声的粒子数涨落和迁移率涨落模型具有很大的局限性。

In semiconductor devices the number fluctuation and the mobility fluctuation models of 1 / f noise have many limitations .

首先介绍了宽温区（27～300°C）MOSFET的阈值电压、泄漏电流和漏源电流的特点以及载流子迁移率的高温模型；

In this paper , the characteristics of MOSFET threshold voltage 、 leakage current and drain source current in the wide temperature range from 27 ° C to 300 ° C are studied , afterwards the high temperature model of carrier mobility is studied too .

介绍了硅材料本征载流子浓度ni、禁带宽度Eg、电子和空穴有效质量和及载流子迁移率μ的高温模型和计算结果。

In this paper , the high temperature models and calculation results of silicon materials ' intrinsic carrier concentration m , energy gap Eg , effective mass of electron and hole as well as carrier mobility p are introduced .

还给出了沟道表面扩散浓度在2.0×1016cm-3到10.0×1016cm-3范围内微米级DMOS器件的阈值电压的简明计算式。提出非均匀沟道DMOS辐照迁移率和阈值电压模型。

The simplified expression of DMOS threshold voltage is given with the channel surface diffusion concentration changing from 2.0 × 1016cm-3 to 10.0 × 1016cm-3.The radiation mobility shift model and threshold voltage model of the non-uniform channel DMOS are proposed .

应变硅载流子迁移率增强机理及模型研究

The Study on Enhancement Mechanism and Model of Strained Si Carrier Mobility

针对相关理论基础如：推力-拉力理论、双重劳动力市场理论、新古典经济学理论、发展经济学说中的人口迁移理论、年龄-迁移率模型等进行了解释。

Explained the basis of the theory , such as : Thrust-pull theory , dual labor market theory , the theory of population migration in the neo-classical economic theory , development economics , age-mobility model .

在考虑了各种散射效应对迁移率的影响后，提出了短沟道MOST表面载流子迁移率的温度模型。

We represent a temperature model of surface carrier mobility of short channel MOST after thinking about kinds of dispersion effect .