真空蒸发工艺

采用磁控溅射与真空蒸发工艺相对比的方法，分析了不同金属化薄膜及其结构对薄膜与PZT陶瓷的结合力和器件高频电学性能的影响。

By comparing sputtering method with vaporization , varied structure of metallization thin films was studied .

采用真空蒸发工艺，用掺杂（Cu）敏化和H2S热处理敏化两种制备方式获得了高阻光敏CdS膜，描述了CdS膜的性质及其与制备参数的关系。

The work on the preparation of high resistance photoconductor CdS film by vacuum evaporation is reported . The characteristics of evaporated CdS film processed by two methods of the Cu-doping and H_2S heat-treatment are presented . The influence of preparation parameters on CdS film is described .

最后采用真空蒸发工艺制备了电池的电极系统，制备出了完整的n~+-SnO2／n-p-p~+-Si太阳电池。

In the end , we make electrode system by vacuum evaporation technique and accomplish the integrated " n - SnO_2 / n-p-p ~ + - Si " solar cell .

采用真空蒸发-真空退火工艺由V2O5粉末制备VO2薄膜，研究了退火温度对薄膜的影响。

The VO_ ( 2 ) thin films are prepared from V_ ( 2 ) O_ ( 5 ) powder by vacuum evaporation and vacuum annealing .

同时，研究真空热蒸发法制备工艺条件对CdS薄膜的晶格结构、表面形态和光学特性的影响规律对提高电池的性能以及转换效率具有重要意义。

At the some time , to study the impact of the preparation conditions on the crystalline structure , surface morphology and optical properties of CdS thin films is of great significance to improve the conversion efficiency of the battery .

真空微蒸发镀覆工艺参数对镀层质量及金刚石性能的影响

Effects of vacuum slowly vapor deposition parameters on coating quality and diamond properties

简述了利用原有的真空制盐基础设施，通过对真空制盐蒸发系统的工艺、设备进行技术改造，提高真空制盐产量的方法。

Through technological modification on process and equipment in vacuum salt making evaporation system , original infrastructure in vacuum salt making is utilized and output of vacuum salt making is improved .