静电感应

静电感应晶体管（SIT）是一类新型功率器件。

Static induction transistor ( SIT ) is a new type of power device .

静电感应晶体管（SIT）电性能参数的研究

A Study on Electrical Parameters of SIT

描述了改善静电感应晶体管（SIT）大电流特性的新方法。

Methods for improving the high current performance of static induction transistor ( SIT ) are presented .

针对埋栅型静电感应晶体管（SIT）提出一种柱栅模型.用镜像法计算了器件内电势分布，并在此基础上计算了沟道势垒、栅效率、电压放大因子等。

A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential .

此外，对静电感应晶体管（SIT）的结构设计、版图设计和工艺流程设计也进行了深入的研究。

In addition , we designed the new device structure , the new layout and the new flow of the Static Induction Transistor ( SIT ) .

20年来对静电感应器件（SID）的开拓性研究

Pioneering Study on Static Induction Devices ( SID ) in Past 20 Years

当控制系统周围发生雷击放电时，空间的电磁场会在各种电缆和金属设备上产生感应电压（包括电磁感应和静电感应），从而使DCS失效或损坏。

Voltage inducted on all kinds of cables and metal equipments by space electromagnetic field can damage DCS when lightning around the DCS is discharging .

为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了PN结和肖特基结的特性。

In order to comprehend schottky gate of organic static induction transistor , chapter two expatiates characteristics of PN junction and schottky junction .

以对静电感应晶体管（SIT）的直流参数的研究为基础，详细研究了与SIT高频性能有关的参数的控制与调节。

In this article , based on the investigation of SITs DC parameters , the controlling and adjustment of the parameters related to SITs high frequency is discussed in detail .

本文简述了静电感应晶体管（SIT）大功率感应加热电源的研究成果。着重介绍了SIT的参数选择及控制方法。

This paper describes a high-frequency and high-power induction heating inverter by using Static induction Transistor ( SIT ) , and proposes the technique of choosing and controlling of SIT .

静电感应器件（StaticInductionDevice，SID）栅源击穿电压VGK不高一直是该类器件研制中存在的一个问题。

It is always a bottleneck to improve the gate-source breakdown voltage ( VGK ) of Static Induction Device ( SID ), which is not high enough during the devices manufacture .

讨论了寄生栅源电容Cgs对静电感应晶体管高频功率特性的影响。

The effects of parasitic gate-source capacitance ( C gs ) on the power performance of SIT are discussed .

500kV输电线路对与之交越的通信线路的静电感应影响及计算

The Effect and Calculation of Electrostatic Induction on Communication Lines Crossed and Approached by Transmission Lines

描述了宽温超高频pnp双极静电感应晶体管的结构、工作原理、设计与制造。

In this paper we describe the structure , operating principle , design and fabrication of the new high frequency BSIT device with large temperature range .

运用半导体器件数值模拟中的漂移-扩散模型，对静电感应晶闸管（SITH）的负阻转折特性进行了模拟和分析。

According to the Drift-Diffusion model in the semiconductor simulation , the simulation and analysis are preserved for negative resistance of sith .

主要介绍静电感应晶体管、电荷调制器件、体电荷调制器件、基极存储图象传感器、增强MOS图象、CMOS等有源象素图象传感器的新进展。

In the paper the recent development of static induction transistor , charge modulation devices , buck charge modulated device , base stored image sensor , amplified MOS image and CMOS active pixel sensors are emphatically described .

本论文首先介绍了静电感应晶体管SIT作用机理，在此基础上系统分析了材料参数、工艺参数和结构参数与器件电性能的关系。

Based on the operational mechanism of SIT , the main electric parameters and construction are described and discussed in this thesis . The dependence of electrical characteristics on constructional parameters , material parameters , and technological parameters are analyzed in this article .

介绍一种电压型PWM静音式变频器，其主电路选用新型全控型器件&双极型静电感应晶体管（BSIT）和静电感应晶闸管（SITH）。

The paper describes a silent voltage source PWM frequency converter . Its main circuit uses novel full controlled devices bipolar static induction transistor ( BSIT ) and static induction thyristor ( SITH ) .

提出了一种描述静电感应晶闸管在阻断态时的工作机理的SIT-BJT等效模型。

SIT-BJT model is proposed for static induction thyristors ( SITh ) operation in the blocking state .

为了制造出特性优良的大功率静电感应器件（SID）满足国民经济发展的需要，在对静电感应器件理论分析的基础上，对其关键制造技术进行了深入的研究。

In order to manufacture power Static Induction Devices ( SIDs ) with excellent characteristic to meet the need of National economy , the key manufacture technologies of Static Induction Thyristor ( SITH ) was studied based on the analysis of its operational principle .

分析了电力静电感应晶闸管的主要电参数与器件结构的关系，结合制管经验进行了100A／1200V器件的结构（版图）设计、工艺设计，给出了有关结果。

The relationship between the main electric parameters and the structure of the static induction thyristor devices has been discussed . Moreover , 100 A / 1 200 V device has been designed and the results are reported here .

分析了影响电力静电感应晶闸管阻断电压BVAK的因素，提出了提高BVAK的方法，并构造了几种阳极结构。

First , the factors that influence the blocking voltage BVAK of power static induction thyristor ( power SITH ) are discussed and some new anode structures are proposed to improve it .

静电感应器件栅源击穿特性的改善

Gate Source Breakdown Performance and Its Improvement for Static Induction Devices

匀强电场中球形导体静电感应规律定量讨论

The Quantitative Discussion on the Electrostatic Induction Law of Spherical Conductor

高线性大输出的静电感应晶体管上变频器

Static Induction Transistor Up Converter with High Linearity and Large Output

静电感应晶闸管耐压参数的控制

How to control the voltage - resistant parameters of static thyristor

研制基于静电感应的非接触给电装置。

The non-contact device is designed based on the electrostatic induction .

超高压变电所内静电感应统计分布规律的估计方法

Method for Evaluating Statistical Distribution of Electrostatic Induction in UHV AC Substation

大功率静电感应器件制造技术的研究

Study on the Manufacture Technology of Power Static Induction Devices

电压型感应加热电源静电感应负载匹配电路静特性分析

Static State Analysis of Voltage Source Induction Heating Inverter Load-Matching