霍尔系数

p型半导体霍尔系数极值新结论的理论与实验验证

Theoretical and Experimental Evidences of the Hall Coefficient Extremum in p-Type Semiconductor

霍尔系数RH随Ce填充分数的增加而增加，空穴浓度p和电导率σ随Ce填充分数的增加而减少。

Hall coefficient R H increased with increasing Ce filling fraction . Hole concentration p and electrical conductivity σ decreased with increasing Ce filling fraction .

测量了钙钍掺杂的多晶YBCO超导体的低温霍尔系数RH、霍尔电阻率ρH及其随温度T变化的特性。

The Hall coefficients and longitudinal resistivity of ( Ca , Th ) doped YBCO superconductors were measured in the normal state .

计算了余误差函数分布和高斯分布扩散层的霍尔系数与扩散层表面浓度NS的关系曲线。

, Curves giving R as function of surface concentration N , have been calculated for two forms of diffusive distribution , namely : the complementary error function and the Gaussian distribution .

测量了MgB2和Mg0.93Li0.07B2的电阻率ρ（T）与霍尔系数RH（T）的温度依赖关系。

The temperature dependences of resistivity and Hall coefficient of MgB 2 and Mg 0.93 Li 0.07 B 2 were measured , and the temperature dependence of cot Θ H was calculated .

对同一条件下制备得到的氮化铜纳米薄膜而言，在温度从100K到300K的变化区间，薄膜的霍尔系数和霍尔电阻率降低，载流子浓度增加而霍尔迁移率基本保持不变。

As the temperature changes from 100 K to 300 K , the Hall coefficient and the resistivity of the films decrease , while the carrier density increase and Hall mobility shows no great changes .

通过对材料的复阻抗频谱、霍尔系数及零功率电阻温度等电学特性的测试和分析，对（Ba，Sr）TiO3系线性PTCR陶瓷进行了相关研究。

A new type of PTCR ceramic materials based on ( Ba , Sr ) TiO 3 with linear resistance temperature characteristics on rectangular coordinates are investigated with the help of complex impedance analysis and measurements for Hall coefficient and zero power R T characteristics .

我们还通过变温的霍尔系数估算了氮化铜薄膜的禁带宽度约为1.35eV。

We also figured out the value of the band gap at about ( 1.35eV ) from the Hall coefficients at various temperatures .

霍尔系数的测量结果表明，MgB2和Mg0.93Li0.07B2的载流子类型为空穴型，二者的霍尔系数都随温度升高而减小，且Mg0.93Li0.07B2的霍尔系数比MgB2略有减小，这可能与Li掺杂引入空穴有关。

The measurement of Hall coefficient suggests the type of charge carriers is hole , and the Hall coefficient of Mg 0.93 Li 0.07 B 2 becomes a little smaller compared with that of MgB 2 which is attributed to Li doping .

硅酸铋（BSO）晶体具有泡克尔斯效应和法拉第磁光效应，通过BSO晶体的偏振光将受电场和磁场的调制，利用这一特性，设计了一种基于BSO晶体传感器的材料霍尔系数测试系统。

There are Pockels Effect and Faraday Effect in BSO crystal , a beam of polarizer light through BSO crystal will be adjusted by electric field and magnetism field . With the character , a new system is designed in this paper for a material Hall coefficient measurement .

锡掺杂的氧化铟透明导电膜的霍尔系数测量

Hall coefficient measurement of conductive and transparent indium tin oxide films

一种材料霍尔系数测试系统的设计

A Design for a Material Hall Coefficient Measurement System

铜的霍尔系数及电阻率的测量

Experimental Measurement of the Hall Coefficient and the Resistivity

非均匀材料样品的霍尔系数的计算

Calculation of Hall Coefficient for Heterogeneous Material Sample

变温条件下半导体霍尔系数及载流子浓度的测量

Apparatus the Semiconductor Hall Coefficient and Carrier Concentration at the Conditions of Different Temperatures

薄膜的霍尔系数随退火温度升高逐渐减小，说明退火影响了薄膜的载流子浓度。

Hall coefficient of thin films gradually decreases with increasing annealing temperature , it shows that the carrier concentration was increased .

发现所测样品的霍尔系数均比块状金属铝的霍尔系数大，且随铝膜厚度的减小，霍尔系数逐渐增大，说明减小铝膜的厚度可以降低载流子的浓度，从而增大材料霍尔系数。

The Hall coefficient of the aluminum film samples bigger than the bulk metal aluminum , Hall coefficient gradually increases with the decrease of the aluminum film thickness .

用四探针法检测了薄膜的霍尔特性，发现随温度的降低薄膜的霍尔系数、霍尔电阻率均增加。

The Hall effect properties of the film were characterized by four-probe method , and the result showed that both the Hall coefficient and the Hall resistivity increase with temperature decreasing .

金刚石膜的质量和电子性质由扫描电子显微镜、拉曼谱、阴极发光及霍尔系数测量来表征。

The quality and electronic properties of the films were characterized by scanning electron microscopy ( SEM ), Raman spectrum , Cathodoleminesecence ( CL ) and the Hall effect measure - ments .

在三个固定的温度下，在磁场强度500-8000G范围内，测量了霍尔系数和横向磁阻随磁场强度的变化，并对得到的结果进行了解释。

Under three fixed temperatures variation of Hall coefficient and transverse magnetoresistance with magnetic field strength , ranging from 500 to 8000 gauss , have been measured , and the results obtained are interpreted .

对系统进行了高精度的标定，消除了温度变化对霍尔元件灵敏度系数的影响。

The high precision calibration is made for this system to eliminate the temperature 's influence on sensing coefficient of the Hall Effect device .

GB/T4326-1984非本征半导体单晶霍尔迁移率和霍尔系数测量方法

Extrinsic semiconductor single crystals & measurement of Hall mobility and Hall coefficient

通过霍尔效应实验测定的霍尔系数，能够判断半导体材料的导电类型、载流子浓度及载流子迁移率等重要参数。

The coefficient of Hall-effect decided by experiment can determine the type of semiconductor materials , the concentration of carrier , the mobility of carrier and other important parameters .