导电类型

通过霍尔测试，获得了SiC材料的导电类型、电阻率、载流子浓度和迁移率。

Electric conduction type , resistivity , carrier concentration and mobility were obtained from the Hall effect measurement .

导电类型热探针判定法

Hot probe method for determining conduction type

导电类型测试表明，利用本方法制备的样品均是p型；

Conducting type measurement results show that all the samples are p-type .

同时，热探针测试发现：薄膜的导电类型为弱N型。

Moreover , the test result by thermal probe showed the weak N-type conductivity of the film .

随Te摩尔分数的增大，薄膜的导电类型由n型转换成p型；

With the molar quality of Te becoming larger , conducting type of PbTe thin films change from n-typ to p-type ;

当磷的浓度达到某适当值时，合金膜的光电导率可以增加2&3个数量级，同时导电类型由P型又变为N型。

As the P concentration increases to a suitable quantity , the photoconductivity of the alloy en-hances 2-3 orders of magnitude and the conduction mechanism changes from P to N type .

三种光伏测试均证明随咔唑树突代数的增加样品的导电类型逐渐由n型特性变为p型特性。

It was shown that the conductivity types of these samples change from n-type to p-type with the increasing generation of the carbazole groups by all the three kinds of photovoltaic measurement .

X射线和Raman测量显示薄膜随Nb掺杂量的增加从四方相转变为立方相。同时电学测量表明，薄膜的导电类型从半导体转变为金属。

The thin films undergo tetragonal to cubic and semiconductor to metal transitions with Nb concentrations as shown by the x-ray diffraction , Raman spectroscopy and electrical resistivity measurements .

冷热探针法测定薄膜导电类型为p型，随着B/Si面积比的增加，薄膜的电阻率明显下降，由未掺杂的2.052Ω·cm下降到0.021Ω？cm。

P type conductivity was measured by thermal probe . Beside , with the increasing of B / Si area ratio , the resistivity of the films decrease significantly , from 2.052 Ω? cm to 0.021 Ω?

SIMOX样品导电类型反型的研究这可能是Jmajor产生超补偿效应的酶调节机制。

STUDY OF OVERCOMPENSATION EFFECT FOR SIMOX SAMPLE This was mechanism of hormones regulation of overcompensation .

统计计算及简并因子和金施主与金受主的相关性，实验和计算结果都表明，高浓度金掺杂可以改变N型高阻硅的导电类型。

The degeneracy factors and the interrelation between Au donor and acceptor are taken into account in statistical calculation . Both experimental and calculated results show that Au doping at high concentration can change N-type high-resistance silicon into P-type .

给出了N相关的中性受主束缚激子为特征的低温光致发光谱，提出了施主-受主共掺实现ZnO薄膜p型掺杂的机理，所得结果对ZnO薄膜的导电类型控制具有普遍性意义。

Photoluminescence spectrum at 77 K with a characteristic of N related neutral acceptor bound excitons ( A0X ) was given . The mechanism of p-type conductivity realized by donor-acceptor co-doping was proposed , which is useful to the control of conductivity in ZnO films .

SrTiO3单晶的色心与导电类型关系的研究

Study of the relationship between conductive type and color centre in single crystal srtio_3

为进一步提高CdSe的应用价值、扩展其应用范围，有必要对CdSe的光学带隙进行调节、改变其导电类型、提高载流子浓度。

With a view to further improving the application value and application areas , it is necessary to adjust the band gap , to change the type of conduction , and to raise the concentration of charge carrier of CdSe .

在总体Cu/In原子数比接近1时，硒化后可得到各元素分布均匀、具有化学计量比的CIS，且晶体结构为单一的黄铜矿相。CIS薄膜的导电类型为P型，电阻率达到1.2kΩ。

Stoichiometric CIS film can be synthesized with a homogeneous element distribution and a single chalcopyrite phase from the Cu-In precursor film with a Cu / In atomic ratio of 1 . The CIS film exhibits p-type conduction and has a resistivity reaching 1.2 k Ω· cm .

我们的研究表明，Mg元素掺杂CdSe可以调节系统的光学带隙，使其光响应范围基本覆盖整个可见光区；Ag和In掺杂CdSe可以改变其导电类型，提高载流子浓度。

It is shown that the band gap of Mg doped CdSe can be modulated to cover almost the whole visible light region . For the Ag and In doped CdSe systems , the type of conduction can be changed , and the concentration of charge carrier can be raised .

GB/T1550-1997非本征半导体材料导电类型测试方法

Standard methods for measuring conductivity type of extrinsic semiconducting materials

掺锰对不同导电类型硅材料热敏特性的影响

The Effect of Mn-doping on the Thermo-sensitive Characteristics of Different Si Materials

对有机半导体材料的导电类型原理做了详细的研究。

It studies the operation principle of organic semiconductor electric-types in detail .

氧化锌导电类型转化的热力学分析

Thermodynamical analysis of conductivity - type inversion in ZnO

矿物晶体中所含杂质的种类和含量多少决定矿物的导电类型。

The conduction types of minerals are determined by the types and the contents of impurities in crystals .

半导体外延材料导电类型及载流子浓度的简易判定法

An Easy Method for Judging the Type of Electric Conduction and the Concentration of Charge Carrier in Semiconductor Epitaxial Material

研究了阳极腐蚀条件及单晶硅的导电类型和掺杂原子浓度等对多孔硅微结构与室温可见区光致发光性能的影响。

The optimal process of Pt electrode and the effects of etching conditions on the thickness of porous silicon were studied .

利用过氧化氢溶液和氢氟酸溶液二者的混合溶液分别对不同导电类型的样品进行处理。

Samples of two conduction types ( n , p ) were treated by mixed solution of peroxide solution and hydrofluoric solution .

利用复阻抗分析进一步研究了元件在不同的湿度环境中的导电类型和等效电路。

The conduction types and equivalent circuits have made further study based on complex impedance plots of the sensor in different relative humidity .

通过霍尔效应实验测定的霍尔系数，能够判断半导体材料的导电类型、载流子浓度及载流子迁移率等重要参数。

The coefficient of Hall-effect decided by experiment can determine the type of semiconductor materials , the concentration of carrier , the mobility of carrier and other important parameters .

霍尔效应测试是半导体测试技术中一种重要的测试手段，用于测量半导体材料的导电类型、载流子浓度、载流子迁移率等电学参数，在研究和生产中有广泛的应用。

Hall effect measurement is an important means for characterization of semiconductor , which can be used to measure the conduction type , carrier concentration , mobility and so on . Therefore , it is extensively employed in research and industry .

本文按不同非导电聚合物基体类型进行了归纳，评述了非导电聚合物基体碳纳米管复合材料的制备、性能和应用等情况。

Different kinds of no-conducting polymeric composites are concluded . Dreparation , property and application of non-conducting polymeric composites of carbon nanotubes are summarized .

将钙钛矿型固体电解质材料分为氧离子导电型和氢离子导电型两种类型，分别介绍了它们的导电机理及近期研究进展。

These materials were divided into two types : oxide-ionic conductor and protonic conductor , their mechanism of ionic conduction and research progress are reviewed in this paper .

粉末导电性能研究表明，粉末样品呈金属导电类型。

The study on the electrical property of the powder showed that the powder was metallic conductor .