载流子扩散

载流子扩散对CCD调制传递函数的影响

Effect of carrier diffusion on modulation transfer function of CCD

由此，用Kronig-Penney方法计算了多晶硅非平衡少数载流子扩散长度。

Thus we calculated the non-equilibrium minority carrier diffusion length in the polycrystalline silicon by using the Kronig-Penney 's method .

多晶硅非平衡少数载流子扩散长度的理论计算

A calculating method of non-equilibrium minority carrier diffusion length in the polycrystalline silicon

文中采用拓扑有限元法，得出非平衡载流子扩散方程的拓扑有限元模型。

Topology-finite-element method is used and a topology-finite-element model for diffusion equation of non-equilibrium carriers is obtained .

通过对载流子扩散机理的研究，由数学公式的推导，得到陷阱电荷分布随电场变化的函数关系。

Substituting the electric field distributions into the formula we ve induced , we got the trapped charge distribution inside the buried oxide during total irradiation under different bias states .

用面垒探测器测定n型硅中少数载流子的扩散长度

The diffusion length of minority carriers in n-type silicon measured with a surface barrier detector

同时考虑LED中的光子循环效应，并对LED激活层中热载流子的扩散方程进行分析，可以得到转换过来的近红外光的空间分布情况。

Considering the photon recycling effect in the LED , and analyzing the carrier diffusion equation in the active layer , the output NIR spatial distribution can also be obtained .

通过求解非平衡载流子的扩散方程导出了反射式NEAGaN光电阴极的量子效率公式。

The quantum yield formula of reflection-mode NEA GaN photocathode was gotten by solving the diffuse equation of non-equilibrium carriers .

文章介绍了一个基于弱Hund耦合规则以及载流子漂移扩散机制所提出的关于钙钛矿氧化物p-n异质结构的自旋极化输运机制的物理模型。

A model of spin-polarized transport in perovskite oxide p-n heterostructures is introduced based on the weak Hund coupling and semiconductor energy band theory .

结合载流子密度扩散方程以及光子密度分布模型，探讨COD发生位置，同时分析了腔面膜热效应损伤和场效应损伤，探讨如何避免腔面COD的发生。

Combined with the carrier density diffusion equation and the photon density distribution model to investigate the location of COD . And analyzes the thermal effects damage and field effect damage of thin film , in order to avoid the occurrence of COD on the cavity surface . 3 .

考虑到表面复合，我们提出了一个理论模型来进行模拟载流子的扩散过程。

Considering surface recombination , the theoretical model was proposed to simulate diffusion process .

以数值结果揭示外延层的体电阻率及厚度、活性区载流子的扩散长度、模增益和丝区宽度等参量对上述各种分布的影响。

Numerical results indicate how the various parameters such as bulk resistivity and carrier diffusion length in the active region affect the profiles .

但是如果电解质中各类电荷载流子的扩散率是不相同的，那么，通过电解质的电压降将是二次方地变化。

But if the diffusion rate of varies charge carrier in electrolyte is different , so the voltage drop which passed electrolyte would change in square .

载流子表观扩散长度与偏置光强关系的计算机模拟&a-Si∶H表面光生电压（SPV）实验的若干分析

The Computer Simulation for Intensity Dependence of Apparent Diffusion Length & Analysis of Surface Photovoltage ( SPV ) Experiments in a-Si : H

通过分析SiGeHBT超薄基区中非平衡效应对载流子温度，扩散系数等参量的影响，建立了超薄SiGeHBT基区渡越时间模型。

The influences of non-equilibrium effect on the carrier temperature and diffusion coefficient in the ultra-thin-base SiGe HBT are analyzed in this paper . This leads to the forming of a base transit time model for ultra-thin-base SiGe HBT .

在计算中，考虑了电流密度分布、自热效应、量子阱内载流子的横向扩散和光场的分布等主要物理过程，并对各种物理过程进行了自洽式计算；

In our calculation model , all the major physical processes including the current density distribution , the self-heating effect of devices , the carrier lateral diffusion in quantum wells and optical field modes are considered and calculated consistently .

确定了低温下非平衡载流子复合率及扩散速度的降低，是导致SRAM断电后数据残留的主要原因。

The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature .

同时对器件的N基区设计则综合考虑了耐压、载流子寿命、迁移率、载流子的扩散长度和通态压降等，得到了RSD在不同耐压需求下的掺杂浓度和主要阻断区域的优化设计。

Taking account of carrier lifetime , carrier mobility , carrier diffusion length and its on stage voltage drop , then the optimization design of doping concentration and the width of n base region required in different withstand voltage can be getted .

动量和能量驰豫，载流子－载流子散射，谷间和谷内散射，光学声子散射，载流子扩散等机制都已被广泛研究。

Momentum and energy relaxation , carrier-carrier scattering , intervalley and intravalley scattering , optical phonon scattering and carrier diffusion have been investigated extensively .