离子注入掺杂

离子注入掺杂锐钛矿TiO2薄膜的光学性能

Optical properties of N-doped anatase TiO_2 films prepared by ion implantation

离子注入掺杂Cd（0.2）Hg（0.8）Te红外探测器

Ion implantation doping of Cd_ ( 0.2 ) Hg_ ( 0.3 ) Te for infrared detectors

H3英寸GaAs离子注入掺杂材料研究

Study on Φ 3 inch Ion Implantation in GaAs Material

研究了CVD合成类Ⅰb型金刚石薄膜，通过硼、氢离子注入掺杂及退火温度对金刚石薄膜导电特性的影响。

The effects of B and H ion injection and changing anneal temperature on the conductivity of diamond film (ⅰ b ) by CVD were investigated .

对CBN薄膜进行了离子注入掺杂，以硫（S）作为掺杂剂，获得了CBN薄膜的N型掺杂。

The research for doping of CBN was carried by implantation . Sulfur ( S ) was employed as n-type dopant and the corresponding conductive types was achieved .

讨论了离子注入掺杂的导电机制。

Mechanism of conductivity induced by ion implantation was also discussed .

离子注入掺杂热再分布的分析计算

Analysis and Computation on Re-Distribution of Ion-Implanted Impurity Concentration

聚苯胺的离子注入掺杂研究

Doping study on ion implantation of polyaniline

研究了聚苯胺的离子注入掺杂对导电性的影响。

In this paper studied was the influence of ion implantation doping on the conductivity of polyaniline .

显然，这必将对材料表面改性工艺，包括离子注入掺杂等工艺的发展发挥作用。

Obviously , it must play a role in progress of surface modification technology of materials , including material impurity by ion implantation .

本文对多晶硅膜离子注入掺杂和扩散掺杂制备浅发射结进行了实验研究。

An experimental study has been carried out on the doping of polysilicon by ion implantation and diffusion for the preparation of shallow junctions .

聚乙炔的离子注入法掺杂

Doping effects of ion implantation in polyacetylene film

在聚合物中离子注入和掺杂的研究

Study of Doped Polymer

离子注入缺陷局域掺杂的高效率硅pn结发光二极管

Efficient Silicon Light-emitting pn Diode Prepared by Ion Implantation Locally-doped Defects

其次，在常温下，本征CdTe薄膜均为高阻半导体。为了改善其导电性能，通常向CdTe薄膜中掺入施主或受主杂质，其中离子注入技术是掺杂方法之一。

Secondly , in normal temperature , CdTe thin films are high resistance semiconductor , for improving its electricity capability , we commonly inject benefactor or acceptor impurities into the pure CdTe thin films , the Ion influx technique is a good method among many adulteration means .

浅离子注入调节表面掺杂浓度以达到调整阈值电压的目的。

Shallow ion implantation modulates surface impurity density for modulating threshold voltage .

多晶硅膜离子注入和扩散掺杂制备浅结的研究

A Study on the Doping of Polysilicon by Ion Implantation and Diffusion for Preparation of Shallow Junctions

本文讨论了高速双极器件制造中的离子注入技术。重点讨论在双极器件制造工艺中的离子注入掺杂技术，离子注入形成浅结技术，以及离子注入层的退火技术。

Ion implantation technique for the fabrication of very high-speed bipolar circuits is discussed in the paper , with emphasis on the ion implantation doping and shallow junction formation and the annealing of the implanted layer in bipolar device process .