离子晶格

  • 网络ionic lattice;ionic crystal lattice
离子晶格离子晶格
  1. 非简谐性离子晶格在光场中的能谱&动态斯塔克效应

    Energy Spectrum of Anharmonic Ionic Crystal Lattice in Lightfield A Dynamical Stark Effect

  2. 仅仅带低电荷的大的阳离子,能和大的多卤化物离子产生稳定的离子晶格。

    Only large cations with low charge give a stable ionic lattice with the large polyhalide ions .

  3. 对于混合电解质水溶液,本文从Frank-Thompson离子弥散晶格理论导出了可用于任意价态的单个离子活度系数的计算公式。

    Based on experimental data , the expression has been derived by adopting the Frank-Thompson ionic diffuse-lattice theory to calculate activity coefficient of individual ion of any valence in mixed electrolytic solution .

  4. 人们发现,这种强的EPR电场效应发生在(i)过渡金属离子与晶格的结合比较松散和(ii)过渡金属离子所处位置局部电场比较强两种情况中。

    It is found that these strong electric-field effects occur in the cases of ( I ) the loose binding between transition metal ion and lattice and of ( ii ) the strong local electric field at transition metal ion site .

  5. 估算离子晶体晶格能的新方法

    A New Method for Estimating the Lattice Energy of Ionic Crystals

  6. 离子晶体晶格能的计算&Ⅱ.排斥指数的估计

    Calculation of Lattice Energies of Ionic Crystals ⅱ . Estimation of Repulsive Exponents

  7. 离子晶体晶格能的计算机辅助计算

    Computer aided computation of ionic crystal lattice energy

  8. 一个缺失原子或离子的晶格节点位置。

    A normally occupied lattice site from which an atom or ion is missing .

  9. 主要的去除机理包括吸附、表面络合、溶解-沉淀以及重金属离子与晶格中之间的离子交换作用。

    Removal mechanisms include ad-sorption-sorption of cations on the apatites , surface-complexation , dissolution-precipitation and ion-exchange between the aqueous cations and the lattice Ca2 + .

  10. 杂质离子进入晶格时的掺杂行为决定了掺杂无机晶体的结构,而杂质能级决定掺杂无机晶体的许多功能性质。

    Doping behavior of exotic ions entering the lattice determines the structure of doped crystals , and impurity energy levels determine functional properties of doped crystals .

  11. 发现Pr~(3+)离子使晶格胀大、产生畸变,从而导致光学性质的变化。

    It has been discovered that Pr ~ ( 3 + ) make lattice expanding and deforming , thus causing changes is optical properties of the pigment .

  12. 这是由于在含金黄铁矿和含金毒砂中,Au~+等不同电价的离子替换晶格中的Fe~(2+),产生顺磁中心。

    This is attributed to the formation of paramagnetic center resulting from the substitution of Au ~ + ion and etc. with different electrovalence for ferrous iron ( Fe ~ 2 + ) in the lattice of pyrite and arsenopyrite containing Au .

  13. 离子注入InP晶格损伤模型的研究

    A study of lattice damage model of ion implantation in InP

  14. 煅烧温度可影响催化剂的晶粒尺寸、晶型、光吸收特性、晶格畸变和膨胀程度以及掺杂离子进入TiO2晶格的能力,从而对掺杂纳米TiO2的光催化性能产生影响。

    Calcined temperature could influence crystal size , phase transformation , light absorption property , distortion and expansion degree of crystal lattice and the ability of doped ions entering into lattice TiO2 , and then influenced the photocatalytic activity of TiO2 .

  15. 高能磷离子注入硅晶格的损伤初探

    A Study of lattice damage by MeV P ion implantation in Si

  16. 离子注入退火晶格恢复和电激活动力学研究

    A study of kinetics of lattice restoration and impurity electrical activation of as and P implanted in Si

  17. 锂离子从尖晶石晶格中的脱嵌分为两步,尖晶石型锂锰氧化物的容量损失主要发生在高电势区即反应的第二步。

    The results displayed that the electrochemical oxidation and reduction for the spinels could be divided into two steps , Mn dissolution mainly occurred at the second step ( reaction ⅱ - high voltage region ) .

  18. 稀土锰氧化物的居里温度、宏观磁性和微观磁性不仅取决于A位稀土离子掺杂引起晶格的畸变,而且取决于A位离子掺杂引起的额外磁矩。

    The Curie temperature and macro ( micro ) magnetism of the rare earth manganites are dominated not only by crystal lattice distortion due to rare earth element doping on A site , but also by extra magnetic moments of A site doped ion .

  19. Ca~(2+)离子在BaTiO3晶格中B位的固溶度

    Solid solubility of ca ~ ( 2 + ) in the B site of batio_3 lattice

  20. X射线衍射谱表明掺入铈离子使得ZnO的晶格常数变大,衍射峰向小角方向移动。

    It is showed that ZnO dopes cerium ions make the lattice constant larger in X-ray diffraction spectra . The diffraction peaks move to small angle .

  21. B位离子掺杂引起的晶格畸变可用极化力来表示,极化力的大小很好解释了B位离子掺杂引起的Curie温度变化。

    The crystal lattice aberration caused by B_site dopant can be expressed by the power of electric polarization , which interprets the shift of the Curie_temperature caused by B_site dopant .

  22. 结合Co、Ni掺杂材料的结构和性能,将其在晶体场稳定能、离子半径、离子晶格能及氧化态等方面对正极材料循环性能的影响进行探讨。

    Combine the conclusion of structure and performance analysis with element Co and Ni , to Analyze the influence of them in crystal field stabilization energy , hydronium semidiameter , crystal lattice energy and oxidation value .

  23. 表明高剂量的离子注入导致了晶格的严重损伤,sb离子到这个浓度时,576cm-1峰对应的波矢面上的晶格结构损伤已经比较严重。

    This shows that high doses of ion implantation resulted in serious injury lattice , Sb ions to this concentration , 576 cm-1 peak corresponding to the wave vector surface of the crystal lattice structure damage have been more serious .

  24. Bi2O3的添加量(质量分数)为0.04,原料相石英消失。Bi-O膨胀系数较Si-O的大和Bi3+离子进入堇青石晶格中是引起堇青石陶瓷热膨胀系数升高的主要原因。

    The optimum content of Bi_2O_3 ( mass fraction ) is 0.04.Because the thermal expansion coefficient of Bi-O bond is much larger than that of Si-O bond , the addition of Bi_2O_3 cause the increase of the thermal expansion coefficient of the cordierite ceramics .

  25. 红宝石Cr~(3+)离子的自旋-晶格弛豫时间和浓度效应

    Spin-lattice relaxation and concentration effects of cr ~ ( 3 + ) in Ruby

  26. 石灰中V~(2+)离子的自旋-晶格耦合系数的理论计算

    Theoretical calculation of the spin-lattice coupling coefficients for v ~ ( 2 + ) ion in lime

  27. 同时也研究尘埃间距、磁场强度和负离子含量对尘埃晶格波色散关系的影响。

    The influences of the inter-grain spaces , the magnetic field intensity and the negative ions content on the dispersion property are also investigated .

  28. 离子极化和离子晶体的晶格能&离子极化能的理论计算和适用于所有离子晶体的晶格能公式

    Ionic polarization and lattice energy of ionic crystals & theoretical calculation of polarization energy and the general equation of lattice energy for all types of ionic crystals

  29. 试验结果表明:(1)TiO2通过Ti4+置换Cr3+,抑制了高挥发性铬离子的形成,产生了铬离子空位及引起晶格畸变,增大了Cr3+扩散速率,从而促进了Cr2O3材料烧结。

    The results showed that : ( 1 ) TiO2 promoted the sintering of chromic oxide by Ti4 + replacing Cr3 + , which restrained the formation of high volatility chrome cation through forming chrome cation vacancy , and therefore caused lattice distortion and increased Cr3 + diffusion rate .

  30. 在A1离子掺杂浓度较低时,薄膜中载流子浓度随A1离子掺杂浓度的增加而升高,但是过多的Al离子掺杂会在晶格间形成缺陷,降低载流子浓度和迁移率,使得薄膜电阻率升高。

    When Al doped concentration is low , the carrier concentration increases with increasing the Al doped concentration . However , Al dopant will form defects in the crystalline lattice when the doped amount is high , and it will reduce the carrier mobility and make the resistivity increase .