碳化铪
- 网络HAFNIUM CARBIDE;HfC
碳化铪-
研究结果表明在适当的退火温度下碳纳米管表面形成了碳化铪，并显著提高了碳纳米管的发射电流密度、发射均匀性和发射稳定性。
Result shows hafnium carbide formed on the surface of CNT films at annealing temperature of 1200 ℃, which improved the field emission current densities , emission uniformity and emission stability for CNT films .
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我们认为碳纳米管表面发射性能的提高归功于表面碳化铪膜良好的导电性、学惰性和低逸出功。
The improvement field emission by Hf coating on CNTs surface is attributed to the low work function , chemical inertness and good conductivity of HfC .