氧化钒

采用此法在不同的溅射电压下制备了氧化钒薄膜，对这些薄膜的性能做了分析和比较。

VOx films were deposited under different sputtering voltage by our new method and the properties of the films were analyzed .

论文主要包括以下六方面内容：（1）氧化钒薄膜的微观结构是影响薄膜性能的重要因素。

The dissertation was narrated from six aspects as follows : ( 1 ) Microstructures of the VOx films have great influence on the film properties .

掺杂Fe2O3对氧化钒相变的影响

Influence of Fe_2O_3 doping on the phase change of VO_2

双靶磁控溅射制备掺W氧化钒薄膜的研究

Study on W-doped vanadium oxide thin films prepared by double targets magnetron sputtering

氢水平衡法制备二氧化钒薄膜及XPS能谱分析

Preparation of VO_2 Thin Films by H_2 / H_2O Equilibrium Method and XPS Analysis

多孔硅表面氧化钒热敏电阻薄膜的阻温特性系列化厚膜PTC热敏电阻浆料的研制

Study on Series of the Thick-Film PTC Thermal Paste

氧化钒薄膜电阻PSPICE模型及特性分析

Characteristics Analysis and PSPICE Model of Vanadium Oxide Thin Film Resistance

IBED和Sol-gel制备方法对二氧化钒薄膜性能的影响

Effect of BED and Sol-gel Methods on Electrical Properties of VO_2 Thin Films

作为一种3d过渡金属氧化物，二氧化钒在68°C附近发生金属与半导体之间的相变，发生相变时通常伴随着光学和电学常数的巨大变化。

As one of 3d transition metal oxides , vanadium dioxide undergoes first-order metal-insulator near 68 ° C. The phase transition is always accompanied by dramatic changes in optical and electrical properties .

含MnO钛渣中氧化钒还原能力的研究

Study on reduction of vanadium oxide in the titania slag containing MnO

发现经热处理后氧化钒薄膜出现了金属-绝缘体相变特性，相变温度约为55°C，相变幅度接近两个数量级。

It has been discovered that after the annealing , VOx thin films present the character of metal-insulation character , with the phasetransition temperature of 55 ° C and phasetransition range of about two magnitudes .

有的氧化钒（x≈2）在室温附近具有较高的电阻温度系数，可达（-2～-4）%K-1。

VO x ( x ≈ 2 ) has temperature coefficient of resistivity as high as ( - 2 ~ - 4 ) % K - 1 near room temperature .

常温直流对靶溅射制备高TCR氧化钒薄膜

Preparation of Vanadium Oxide Thin Films with High TCR by DC Facing Targets Sputtering at Room Temperature

结果表明，Mo原子和W原子掺杂均可有效地降低氧化钒薄膜室温方阻，并且提高薄膜的室温TCR。

Results show that the TCR of VOx films was increased , and the sheet resistance was reduced effectively both by Mo-doping and W-doping .

二氧化钒（VO2）是一种具有热致相变特性的金属氧化物，随着温度升高，大约在68℃附近，发生从非金属（或半导体）到金属的性质突变。

VO_2 is a kind of metallic oxide which undergoes a metal-semiconductor phase transition near 68 ℃ .

通过设计正交试验，系统分析了Ar和O2的标准体积比、溅射功率、工作压强和热处理时间对氧化钒薄膜TCR的影响。

The effects of Ar / O_2 standard molar volume , sputtering power , gas pressure and annealing time on TCR were analyzed by orthogonal experiments .

在硅片上得到了电阻变化2个数量级的二氧化钒（VO2）薄膜。

VO_2 thin films exhibit an abrupt resistivity change of two order of magnitude on silicon substrate .

采用离子束溅射法制备了在室温附近具有高TCR氧化钒薄膜。

The vanadium oxide thin film has high temperature coefficient of resistance at near room temperature which is prepared by ion beam sputtering .

W原子的掺杂可有效地将二氧化钒多晶薄膜的相变温度降低到室温附近，为大幅提高薄膜的室温电阻-温度系数提供了可能。

Tungsten doping could decrease effectively the T_c of the vanadium dioxide film to room temperature . It is possible to increase the temperature coefficient of resistance of the films for IR application .

采用离子束增强沉积（IBED）法和溶胶-凝胶法（Sol-gel）在siO2/Si衬底上制备了具有半导体相-金属相转换特性的二氧化钒薄膜。

VO2 thin films with semiconductor-to-metal phase transition property were prepared by IBED and Sol-gel methods on SiO2 / Si substrate .

本论文是利用多种物理气相沉积方法制备具有高TCR红外探测器用氧化钒薄膜的研究。

In this thesis , three vapour deposition techniques are adopted to prepare vanadium oxide thin films with high TCR for uncooled IR detectors .

二氧化钒（VO2）是一种被广泛研究的热敏材料，具有多种晶形。

VO2 material is a widely used on the thermal material , while it has a variety of crystal structures .

氧化钒薄膜由于具有高电阻温度系数（TCR），近年来被广泛应用于非制冷红外探测及红外成像领域。

Vanadium oxide thin films are widely used in the field of uncooled IR detecting and imaging for its high temperature coefficient of resistance ( TCR ) .

介绍了一种针对二氧化钒敏感材料的CMOS读出电路（ROIC）。

A complementary metal oxide semiconductor ( CMOS ) readout integrated circuit ( ROIC ) for the sensitive material of vanadium dioxide ( VO_2 ) was introduced .

在硒化锌基片上制备了氧化钒薄膜，对薄膜进行了X射线电子能谱测试和数据拟合，并对其进行了退火处理来调节薄膜内组分。

The vanadium oxide thin films are prepared on zinc selenide by DC magnet sputtering method . The X-ray photoelectron spectroscopy ( XPS ) test and data fit are performed and the components control in the films is realized by annealing .

本论文采用相同的磁控溅射工艺在Si基底上制备了氧化钒薄膜，并辅以快速退火工艺对薄膜样品进行热处理。

In this paper , the same vanadium oxide thin films with Si substrate were fabricated by facing Target Magnetron Sputter , and then some different Rapid Thermal Annealing ( RTA ) process conditions were employed to treat the samples .

为了研究制备工艺对氧化钒薄膜微观结构的影响，采用X射线衍射和扫描电镜，对用sol-gel法制作的、不同热处理条件下的硅基氧化钒薄膜之结构及形貌进行了分析。

Investigated was the effect of preparing process on the microstructure of thin film of vanadium oxide . This film was prepared on the silicon substrates by sol-gel method , and was heat-treated for four hours at 470 ℃ .

在分析了热敏电阻红外探测器工作原理的基础上，利用PSPICE的多项式受控源和现有器件，建立了氧化钒热敏电阻的等效子电路模型，进而推导出氧化钒热敏薄膜红外探测器的PSPICE等效模型。

Based on the principle analysis of thermosensitive resistance infrared detector , the equivalent sub-circuit model of vanadium oxide resistance is established and simulated by using the existing PSPICE element .

SiO2衬底上制备的氧化钒薄膜经真空热处理后出现光致相变特性，光致激发前后薄膜的太赫兹透射率变化8%，可应用于光调制器件。

VOx deposited on SiO2 substrates after annealing in vacuum , photo-induced phase transition occurred . Before and after excitation , the THz transmission changed of 8 % , which can be used in optical device .

氧化钒薄膜作为非制冷红外探测器的热敏材料，要求具有高的电阻温度系数（TCR）与合适的电阻值，以满足器件的应用。

As the detecting material of uncooled infrared detectors , vanadium oxide ( VOX ) thin films need high temperature coefficient of resistance ( TCR ) and suitable film resistance for using of the device .