二氧化钒

作为一种3d过渡金属氧化物，二氧化钒在68°C附近发生金属与半导体之间的相变，发生相变时通常伴随着光学和电学常数的巨大变化。

As one of 3d transition metal oxides , vanadium dioxide undergoes first-order metal-insulator near 68 ° C. The phase transition is always accompanied by dramatic changes in optical and electrical properties .

纳米二氧化钒薄膜的制备及红外光学性能

Fabrication and Infrared Optical Properties of Nano Vanadium Dioxide Thin Films

氢水平衡法制备二氧化钒薄膜及XPS能谱分析

Preparation of VO_2 Thin Films by H_2 / H_2O Equilibrium Method and XPS Analysis

IBED和Sol-gel制备方法对二氧化钒薄膜性能的影响

Effect of BED and Sol-gel Methods on Electrical Properties of VO_2 Thin Films

二氧化钒（VO2）是一种具有热致相变特性的金属氧化物，随着温度升高，大约在68℃附近，发生从非金属（或半导体）到金属的性质突变。

VO_2 is a kind of metallic oxide which undergoes a metal-semiconductor phase transition near 68 ℃ .

在硅片上得到了电阻变化2个数量级的二氧化钒（VO2）薄膜。

VO_2 thin films exhibit an abrupt resistivity change of two order of magnitude on silicon substrate .

W原子的掺杂可有效地将二氧化钒多晶薄膜的相变温度降低到室温附近，为大幅提高薄膜的室温电阻-温度系数提供了可能。

Tungsten doping could decrease effectively the T_c of the vanadium dioxide film to room temperature . It is possible to increase the temperature coefficient of resistance of the films for IR application .

采用离子束增强沉积（IBED）法和溶胶-凝胶法（Sol-gel）在siO2/Si衬底上制备了具有半导体相-金属相转换特性的二氧化钒薄膜。

VO2 thin films with semiconductor-to-metal phase transition property were prepared by IBED and Sol-gel methods on SiO2 / Si substrate .

二氧化钒（VO2）是一种被广泛研究的热敏材料，具有多种晶形。

VO2 material is a widely used on the thermal material , while it has a variety of crystal structures .

介绍了一种针对二氧化钒敏感材料的CMOS读出电路（ROIC）。

A complementary metal oxide semiconductor ( CMOS ) readout integrated circuit ( ROIC ) for the sensitive material of vanadium dioxide ( VO_2 ) was introduced .

二氧化钒薄膜的制备及其光学特性研究

Preparation of Vanadium Dioxide Thin Films and Study of Optical Properties

二氧化钒薄膜的结构、制备与应用

Structure and preparation and application for vanadium dioxide thin films

二氧化钒粉末制备工艺研究的现状和发展趋势

Current situations and technical progresses for preparation vanadium dioxide powder

退火温度对二氧化钒薄膜红外透过率的影响

Influence of Annealing Temperature on Infrared Transmittance of VO_2 Film

磁控溅射法制备二氧化钒薄膜及其性能表征

Preparation and Characterization of Vanadium Dioxide Films by Magnetron Sputtering

二氧化钒薄膜的相变性能研究

Research on Phase Transition Property of Vanadium Dioxide Thin Films

二氧化钒薄膜的退火组分变化及光学特性研究

Appealing component changes and optical properties of VO_2 thin films

采用钒渣浸出液制备二氧化钒粉末

Preparing VO_2 Powder using Leach Solution of Vanadium Slag

二氧化钒智能节能材料的溶液法制备与光学性能

Solution Processing and Optical Properties of VO_2 Thermochromic Materials

二氧化钒的制备条件与方法的研究

Study on approaches and requirements to synthesize vanadium dioxide

二氧化钒多晶薄膜的掺杂改性

Modification of Polycrystalline Vanadium Dioxide Film by Doping Methods

溶胶-凝胶制备二氧化钒薄膜的价态研究

Study on Chemical States of VO_2 Thin Films Prepared by Sol – gel Method

二氧化钒和三氧化二钒研究进展

Progress of Study on Vanadium Dioxide and Sesquioxide

非理想配比二氧化钒薄膜喇曼光谱研究

Nonstoichiometry on Raman spectra of VO_2 films

连续激光辐照下二氧化钒薄膜热致相变实验研究

Experimental study on heating-induced phase transition of vanadium dioxide thin films irradiated by CW laser

二氧化钒相变分析及应用

Analysis and application of VO_2 phase transition

二氧化钒及掺杂二氧化钒粉体的制备与形貌控制研究

Study on the Preparation of the VO_2 and the Doped VO_2 Particles and Their Morphologies Control

掺钨二氧化钒纳米粉体的制备及其相变性能的研究

Studies on the Preparation of W-doped Nanometer VO_2 Powder and the Properties of Its Phase Transition

给出了能应用于智能窗的纳米二氧化钒薄膜材料，并与常规的二氧化钒薄膜材料进行了分析比较。

Nano-VO2 thin film that would be applied in the intelligent window is compared with conventional VO2 thin film .

通过测试结果分析发现通过感应电荷注入也可以诱导二氧化钒薄膜发生相变。

And the result of MOS capacitance test show that induced charge injection can also induce phase transition of vanadium dioxide .