发光强度

n型GaN薄膜的光荧光谱图显示，主峰的积分强度随着掺硅浓度的增高而增高，黄带峰的发光强度反而下降。

The Photoluminescence spectrum of GaN : Si showed that the integration intensity of the main peak increased and luminous intensity of the yellow band droped with Si exiting .

在PL谱中没有观察到黄光带，相反观察到了随膜厚度增加峰位发生蓝移，并且发光强度也增加的蓝光带。

The yellow band is not observed in the PL spectrum , on the contrary , With the film thickness increases , the peak position of blue band is blue-shifted , and the luminous intensity also increased .

提高Si量子点发光强度的途径

Approach for Enhancing Luminescent Intensity of Si Quantum Dots

探讨了提高Si量子点发光强度的可能途径。

The routes for enhancing luminescent intensity of Si quantum dots was discussed .

水热法合成高发光强度ZnS：Cu，Al纳米荧光粉研究

Study on highly luminescent ZnS ∶ Cu , Al nano-phosphor powder synthesized by hydrothermal method

掺Mn硅酸锌薄膜中微量氧化锌对发光强度的影响

Influence of Tiny ZnO on Luminescence Intensity of Zn_2SiO_4 : Mn Films

研究发现经表面修饰剂修饰后，ZnO量子点的发光强度或发光峰位发生了改变。

The intensity or position of the photoluminescence peak changes after surface modification .

然而在H模式放电时，偏压诱导等离子体密度、发光强度下降。

However , in the H mode , rf bias produces a decrease in electron density and plasma emission intensity .

测定了在不同温度下经紫外线辐照后的光激励谱，变化范围为10&300K同时研究了两种F色心的光激励发光强度在激励读出过程中随温度的变化关系。

The photostimulation spectra after UV-irradiation are measured when we change irradiation temperature between 10 and 300 K.

狗~（60）Coγ线照射后尿pH和发光强度的改变

Changes of pH and luminescence intensity of dog urine after ~ ( 60 ) co γ - ray irradiation

Eu离子的掺杂对氧化锡的粒度无明显影响，而发光强度得到提高。

There is no evident change in the particle size by doping Eu , with emission intensity increased .

同时分析了不同Ga掺杂质量分数对发光强度的影响，指出掺杂质量分数为2%时的发光效果最好；

When different concentration Ga were doped , the luminescence effective with 2 % Ga is best .

在实验选定的最佳条件下，体系的化学发光强度随单碱基错配目标DNA的浓度的增大而增强，验证了该实验方案的可行性。

Under the optimum conditions , the CL intensity increased with the concentration of target DNA , which proved the feasibility of the DNA biosensor .

影响SiO2薄膜中银粒子发光强度的因素分析

Factors for Effect on Photoluminescence Intensity of Silver Particles in Silica Films

CeF3掺杂增强纳米晶Si光致发光强度的研究

Photoluminescence Enhancement of Si Nanocrystals by CeF_3 Doping

PEG的加入有助于提高发光强度，是因为降低了羟基的荧光淬灭。

The luminescent strength is improved owing to decrease the fluorescence quenching of hydroxyl group when PEG is incorporated .

结果表明，Tb的掺入显著增强了多孔硅的发光强度，并且发光峰位出现蓝移。

The luminescence intensity of porous silicon after doping Tb is greatly increased . Blue shift of luminescence peak was also observed .

（ⅱ）比较研究了在配合物中掺杂不同金属离子时对Tb（Ⅲ）发光强度的不同影响；

( ii ) the influences of different doped metal ions on the luminescence of Tb ( III ) complexes are compared ;

从LED的作用距离分析和发光强度分析两方面完成了LED用作标志灯发光器件可行性的理论分析。

The feasibility analyses for LED to be used as the luminous device of beacon lamp have been completed through the analyses of the operating range and the luminous intensity of LED .

与直接掺入EuCl3的玻璃材料相比，以Eu-苯甲酸-1,10-菲咯啉为掺杂剂的玻璃材料，虽然Eu的掺杂量较小，但Eu的发光强度较大。

Comparing EuCl_3 with Eu ~ 3 + complexes with benzoic acid and 1,10-phenanthroline as dopant , the latter has strong luminescence property though it has small mass fraction .

利用CCD拍摄放电影像，通过观测不同放电结构下发光强度的变化推测电子密度的变化情况，得到的结论与斯塔克展宽方法得到的结论相符合。

Discharge image is taken by CCD camera . The conclusion by observing light intensity in different discharge structure is corresponding with the conclusion got from Stark Broadening .

随着LED技术的不断发展，发光强度和光效率都有了明显的提高，为LED在照明及信号光源中的使用奠定了基础。

Brightness and efficiency of LED is higher and higher with the development of LED technology . It is the base of studying a new kind of LED light and signal light source .

但是要想在更广泛的范围里使用LED，例如投影仪、光通信、汽车大灯等，需要进一步提高LED光源的发光强度。

But before LED is adopted in wider areas such as projector , optical communication , automobile headlight and so on , the lumen flux density of LED needs to be enhanced further .

为解决这个问题，CIE（国际照明委员会）制定并推荐标准测试条件A，B。介绍了根据CIE127文件设计的平均LED发光强度测试仪；

To solve this problem , CIE established and recommended standard measuring condition A and B. A kind of measuring instrument for CIE average LED intensity is introduced .

铕离子表面活性剂性剂十二烷基硫酸钠（SDS）能够增强其发光强度。

This complex can emit characteristic fluorescence for europium ion and the luminescence intensity be enhanced by the addition of anion surfactant SDS .

一些含&CH2CH2N（CH3或C2H5）2基团的药物对辐照红细胞膜中硫代巴比妥酸反应物及超弱化学发光强度的影响

Influence of some-ch_2ch_2n ( ch_3 or c_2h_5 ) _2-containing drugs on TBA and Ultraweak Chemiluminescence of radiated erythrocyte membrane

我们发现稀土在AAO做基底时的发光强度与Si或Al做基底时相比增强了4倍，稀土的发光强度在多孔硅做基底时与Si或Al做基底时相比有明显降低。

We find that the luminescence intensity on AAO substrate increased 4 times comparing with that on Si or Al , and luminescence intensity decreases obviously on porous silicon substrate .

PbF2：Gd晶体的发光强度与发光均匀性研究

Luminescence intensity and Uniformity of PbF_2 : Gd Crystals

研究发现：纳米Y2O3：Eu~（3+）的发光强度随Eu~（3+）离子浓度的增加而增大，其最佳掺入量为10%左右，该临界浓度比微米晶的6%明显提高；

It demonstrates that the luminescence intensity of Y_2O_3 : Eu ~ ( 3 + ) phosphors have increased with Eu concentration , the optimal Eu concentration is 10 % .

应用多项式逼近光敏电阻随发光强度变化曲线，将其转换为光敏电阻随时间变化曲线，结合受控电压源，产生SPICE程序描述的光敏电阻子电路模型。

Intensity , transforming this curve into time-dependent curve , utilizing voltage-controlled voltage source , a SPICE program that describes photoresistor sub-circuit model is yielded .