半导体器件

X射线双晶衍射在微波半导体器件中的应用

X ray double crystal diffraction in application to microwave semiconductor device

Integral蛋白质半导体器件特性研究

A Study on the Semiconductor Device Characteristics of Integral Protein

半导体器件在电子设备中能起各式各样的控制作用。

Semiconductor devices can perform a variety of control functions in electronic equipment .

几种半导体器件的硬X射线剂量增强效应研究

Study of hard X-ray dose enhancement effects for some kinds of semiconductor devices

LED、PIN半导体器件原理及其与光纤耦合问题的研究

Principle of LED PIN Semiconductor Device and its Coupling to Optic Fibers

随着科学技术的进步和信息产业的发展，对射频／微波半导体器件的需求在快速增长，加之CAD技术的广泛应用，人们对器件参数的测量十分关注。

With the development of science technology and information industry , RF / microwave semiconductor demanded is increasing rapidly .

用ANSYS软件包模拟半导体器件散热器稳态热阻

Simulation on Stable-state Thermal Resistance of Sinks for Power Semiconductor Devices using the ANSYS software

发光二级管（LED）是一种固态的半导体器件，它可以直接把电能转换为光能。

A light emitting diode ( LED ) is a solid state semiconductor device . It can directly transform electrical energy into light energy .

平板显示器中有源元件的参数测试与其他各类半导体器件的IC器件测试相同。

Characterizing the active elements in flat panel displays is similar to IC device testing on other types of semiconductors .

新颖的功率半导体器件RSD及其应用

A Novel Power Semiconductor Device : RSD and its Applications

GaN基微波半导体器件研究进展

Research progress of GaN-based microwave devices

Si被广泛的应用于各种集成电路和半导体器件中，是微电子产业的基础材料。

Silicon is applied to all kinds of integrated circuit and semiconductor device , and it is an foundational material of microelectronic industry .

CCD是在MOS集成电路技术基础上迅速发展起来的一种新型半导体器件。

CCD is a new kind of semicoductor device which rapidly developed with the technique of MOS integrated circuit .

半导体器件HPM损伤脉宽效应机理分析

The mechanism of HPM pulse-duration damage effect on semiconductor component

GaN基半导体器件的商业化使得当前对Ⅲ族氮化物的研究发展迅猛。

The commercialization of GaN based on semiconductor devices gives a boost to the rapid development in III-Nitrides researching fields .

2009年IEEE功率半导体器件及功率集成电路国际会议述评（上）

Review of 2009 the 21 ~ ( st ) IEEE International Symposium of Power Semiconductor Devices and ICs ( 1 )

随着对Si基半导体器件速度和功率要求的不断提高，使用应变方法进行人工能带剪裁的技术显得越来越重要。

With the demand of the speed and power of Si based semiconductor devices , the technology of band tailoring via stress is becoming more and more important .

实空间转移晶体管是一种新型N型负阻半导体器件，具有高频、高速、可控负阻等显著优点，可大大简化集成电路的复杂程度。

Real space transfer transistor ( RSTT ) is a novel N-type negative differential resistance semiconductor device which has some obvious characteristics , such as high frequency , high speed and controllable NDR .

磁控电抗器（MagneticControlledReactor，MCR）.系统的损耗主要包括铁芯损耗、绕组损耗、半导体器件损耗以及由漏磁产生的杂散损耗等。

The loss of Magnetic Controlled Reactor ( MCR ) includes core loss , windings loss , semiconductor devices loss and stray loss caused by leakage magnetic flux .

空间飞行器防护系统就是利用这一原理，通过宇宙中的电子在飞行器中产生的shower电子，来了解其中半导体器件的有关信息。

The safeguard system of spatial aircraft provides the semiconductor devices information through detection of the shower particles produced by the electron beam .

半导体器件中金刚石散热器热性能的传输线矩阵（TLM）法分析

Thermo Properties Simulation for Diamond Radiator in Semiconductor by TLM Method

破坏性物理分析（DPA）是用于检测半导体器件的。

The destructive physical analysis ( DPA ) is used to detect the semiconductor devices .

采用全控型电力半导体器件IGBT，研制了160kW/30kHz并联逆变式超音频感应加热电源。

Adopting full-controllable electric semiconductor device IGBT , a 160 kW / 30 kHz parallel-resonance super-frequency induction heating power supply has been developed .

采用ADI与高阶紧致差分相结合的方法计算大型非对称稀疏矩阵，并实现了该算法在半导体器件模拟中的应用。

The solution using a spline procedure , SADI , and a high-order compact finite difference ( HOC ) method is presented for the hydrodynamic ( HD ) model for semiconductor device simulation .

在某些情况下，半导体器件或电路必须工作在电磁脉冲（EMP）干扰之下。

In some situations , semiconductor devices and circuits must operate under possible impact of an electromagnetic pulse ( EMP ) .

三维TLM方法在半导体器件的热模拟和热设计中的应用

Use of the Three-Dimensional TLM Method in the Thermal Simulation and Design of Semiconductor Devices

高频表面声波（SAW）驱动下的单电子输运问题的研究对物理学的基础理论、半导体器件的进一步发展和计量学的研究具有重要意义。

The study on single electron transportation induced by a high frequency surface acoustic wave ( SAW ) has important influence on the base theory of Physics , further development of semiconductor devices and the research of metrology .

VDMOS是将微电子技术和电力电子技术融合起来的新一代功率半导体器件。

VDMOS is microelectronics and power electronics integrate a new generation of power semiconductor devices .

本文提出一种用于科学地评价双极型半导体器件（npn或pnp晶体管）工艺水平的微电子测试图形。

A microelectronic test pattern for evaluating bipolar devices ( npn or pnp transistors ) is presented .

本文综述了伺服控制的基本原理，接着回顾了微处理器、电力半导体器件、传感器、控制策略、PWM技术和无传感器控制技术。

The principle of PM synchronous motor is introduced , and the development of microprocessor , power electronic devices , transducer , PWM technology and sensorless control technology are reviewed in this paper .