硅单晶

探测器级NTD硅单晶的研制

Manufacture of NTD Monocrystalline Silicon for Detectors

国产炉拉制Φ76.2mm无位错FZ硅单晶的两种工艺热场分析

Thermal Field Analysis on Two Kinds of Process for Manufacturing Free Dislocation FZ Monocrystalline Silicon ( Φ 76 2mm ) by Home Made Equipment

P型高阻硅单晶材料的寿命初探

Study on the lifetime improvement of p-type high-resistance silicon single crystal materials

关于P型直拉硅单晶中旋涡形成的探讨

A Study of the Formation of Swirl Defects in P-type CZ Si Crystal

脉冲激光辐照p型硅单晶向n型转化

Inversion of p - type silicon to n - type by pulsed laser irradiation

n型高阻硅单晶电阻率均匀性的控制

Procedures to Control the Radial Resistivity Uniformity of n_Type High Resistivity Si Crystal

均匀弯曲硅单晶X射线衍射行为

Behaviour of X-ray diffraction from uniformly bent Si crystal

本文的目的在于研究n型和p型硅单晶材料在外荷载作用下的变形性质。

This paper studies the properties of the mechanical deformation of N-type and P-type monocrystal silicon under external load .

提高CZ重掺锑硅单晶质量和成品率的研究

Study Devoted to the Raising of the Yield of Qualified Cz Silicon Crystals Heavily Doped with Antimony

高压下硅单晶的一级Raman光谱的测量

Raman spectrum of single crystal silicon at high pressure

利用X射线形貌术方法研究了含氢硅单晶中氢致缺陷的分布。

Distribution of defects caused by hydrogen in silicon single crystals is investigated by means of X-ray projection topography .

本文用化学腐蚀和透射电镜及其能谱分析研究了重掺Sb硅单晶中的氧沉淀。

The oxygen precipitation ( OP ) in heavily Sb-doped silicon crystal has been investigated .

快速热处理对直拉硅单晶在模拟CMOS热处理工艺时氧沉淀的影响

Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing

用脉冲激光把稀土元素Yb引入硅单晶中

Implantation of Rare-Earth Element Yb into Silicon Single Crystals by Pulse Laser Beam

本文利用TEM研究了850℃热处理直拉硅单晶中的氧化物沉淀行为。

Using TEM , the behavior of oxygen precipitates in CZ-Si crystals heat annealed at 850 ℃ is studied .

近年来，快速热处理（Rapidthermalprocessing，RTP）已经用于控制直拉硅单晶的生产和研究。

In recent years , rapid thermal processing ( RTP ) has been employed in the manufacturing and research of Czochralski ( CZ ) silicon wafer .

中子嬗变掺杂硅单晶pn结击穿特性的研究

Research on the Breakdown Performance of a pn Junction Manufactured with NTD Sillicon Crystal Nutrition of silicon

设样品的少子产生率仅是一维坐标的函数，计算了P型双面抛光硅单晶样品的表面光电压。

The surface photovoltage of P-type crystal silicon wafer polished both sides was calculated on the assumption that the minority carrier generation of sample is only a function of one dimension coordinate .

本文应用X射线透射截面形貌技术研究了氢气区熔硅单晶中氢致缺陷与热处理温度的关系。

The relationship between the annealing temperatures and the hydrogen-induced defects in floating zone silicon grown in hydrogen atmosphere has been investigated by X-ray section topography .

CZ重掺锑硅单晶的锑和氧杂质

Antimony and Oxygen Impurity in Heavily Antimony doped CZ Silicon Crystals

采用高真空热蒸发沉积技术在硅单晶Si（111）衬底上沉积了WO3薄膜，借助化学刻蚀，SEM。

WO_3 thin films are deposited on Si ( 111 ) by the high vacuum thermal evaporation method .

轴向磁场对硅单晶Czochralski生长过程的影响

Effects of an axial magnetic field on silicon crystal Czochralski growth

双掺硅单晶及其P-N结研究

An Investigation on Dual - Dopant Si and Its P-N Junction

CZ硅单晶中旋涡缺陷对低频大功率管制造的影响

Influence of Swirl Defects in CZ Silicon on Process of Power Transistor

电性轴对称分布电阻率测井的有限元法模拟平用此法后，P型硅单晶的电阻率能控制在1000～3000欧姆·厘米，与目标电阻率一致。

By this method , the resistivity of p-type si crystals can be controlled in the range Of 1000-3000 Ω cm which corresponds with the objective resistivity and the resistivity distribution has been improved .

CZ硅单晶中原生缺陷的特性

Behaviour of Grown in Defects in Czochralski Silicon Crystals

NIM-IC型半导体硅单晶电阻率标准样片与NBS的SRM型标准样片的比较实验

Comparison Experiments Between the NIM and NBS Standard Slices for Single Crystal Silicon Resistivity

中子辐照CZ硅单晶热处理后的电阻率变化

Resistivity Change of Neutron Irradiation CZ Si Crystal

本文研究了直拉重掺硼单晶硅的氧沉淀行为，着重研究了直拉重掺硼硅单晶中的氧沉淀的热处理、内吸杂、RTP处理等性能。

In this paper , firstly , the effect of heavy boron-doping on oxygen precipitation was investigated .

本文研究了大直径直拉硅单晶中的原生微缺陷&流动图形缺陷（flowpatterndefects，FPDs）。

In this paper , the microstructure of flow pattern defects ( FPDs ), one kind of grown-in micro-defects , in large-diameter as-grown CZ-Si single crystals was investigated .